MJ10023
Silicon NPN Transistor
Power Darlington w/Base−Emitter Speed−up Diode
Description:
The MJ10023 is a silicon NPN Darlington transistor in a TO3 type package designed for high−voltage,
high−speed, power switching in inductive circuits where fall time is critical. This device is particularly
suited for line−operated switchmode applications.
Applications:
DSwitching Regulators
DAC and DC Motor Controls
DInverters
DSolenoid and Relay Drivers
Features:
DContinuous Collector Current: IC = 40A
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEV 600V.....................................................
Collector−Emitter Voltage, VCEO(sus) 400V.................................................
Emitter−Base Voltage, VEBO 8V..........................................................
Collector Current, IC
Continuous 40A..................................................................
Peak 80A.......................................................................
Base Current, IB20A...................................................................
Total Power Dissipation, PD
TC = +25C 250W................................................................
Derate Above 25C 1.43W/C......................................................
TC = +100C 143W...............................................................
Operating Junction Temperature Range, TJ−65 to +200C..................................
Storage Temperature Range, Tstg −65 to +200C..........................................
Thermal Resistance, Junction−to−Case, RthJC 0.7C/W.....................................
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector−Emitter Sustaining Voltage VCEO(sus) IC = 100mA, IB = 0 400 − − V
Collector Cutoff Current ICEV VCEV = 600V,
VBE(off) = 1.5V
− − 0.25 mA
TC = +150C− − 5.0 mA
Collector Cutoff Current ICER VCEV = 600V, RBE = 50, TC = +100C− − 5.0 mA
Emitter Cutoff Current IEBO VBE = 2V, IC = 0 − − 175 mA
ON Characteristics (Note 1)
DC Current Gain hFE IC = 10A, VCE = 5V 60 −600
Collector−Emitter Saturation Voltage VCE(sat) IC = 20A, IB = 1A − − 2.2 V
TC = +100C− − 2.5 V
IC = 40A, IB = 5A − − 5.0 V
Base−Emitter Saturation Voltage VBE(sat) IC = 20A, IB = 1.2A − − 2.5 V
TC = +100C− − 2.5 V
Diode Forward Voltage VfIF = 20A − − 5.0 V
Dynamic Characteristic
Output Capacitance Cob VCB = 10V, IE = 0, ftest = 1kHz 150 −600 pF
Switching Characteristics
Delay Time tdVCC = 250V, IC = 20A, IB1 = 1A,
VBE(off) = 5V, tp = 50s,
Duty Cycle 2%
− − 0.2 s
Rise Time tr− − 1.5 s
Storage Time ts− − 2.5 s
Fall Time tf− − 1.1 s
Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle 2%.
Circuit Outline
B
C
E
[ 100 [ 15
1.187 (30.16)
.875 (22.2)
Dia Max
.665
(16.9)
.430
(10.92)
Seating
Plane
.040 (1.02).312 (7.93) Min
.135 (3.45) Max
.350 (8.89)
Emitter
Collector/CaseBase
.215 (5.45)
.525 (13.35) R Max
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
