© 2003 IXYS All rights reserved
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 %
Pulse Width = 300 µs, Duty Cycle < 2.0 %
IXYS reserves the right to change limits, conditions and dimensions.
Power Schottky Rectifier
ISOPLUS220TM
Electrically Isolated Back Surface
Features
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low cathode to tab capacitance(<15pF)
International standard package
Very low VF
Extremely low switching losses
Low IRM-values
Epoxy meets UL 94V-0
Applications
Rectifiers in switch mode power
supplies (SMPS)
Free wheeling diode in low voltage
converters
Advantages
High reliability circuit operation
Low voltage peaks for reduced
protection circuits
Low noise switching
Low losses
See DSS 20-01A data sheet for
characteristic curves
C
A
C
A
ISOPLUS 220TM
Isolated back surface*
Symbol Conditions Maximum Ratings
IFRMS 35 A
IFAV TC = 140°C; rectangular, d = 0.5 20 A
IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine 120 A
EAS IAS = 8 A; L = 180 µH; TVJ = 25°C; non repetitive 7 mJ
IAR VA =1.5 • VRRM typical; f=10 kHz; repetitive 0.8 A
(dv/dt)cr 5000 V/µs
TVJ -55...+175 °C
TVJM 175 °C
Tstg -55...+150 °C
TL1.6 mm (0.063 in) from case for 10 s 260 °C
Ptot TC = 25°C90W
VISOL 50/60Hz RMS; IISOL< 1 mA 2500 V~
FCMounting force 11... 65 / 2.4 ...11 N/lb
Weight typical 3 g
IFAV = 20 A
VRRM = 100 V
VF= 0.65 V
DSS 20-01AC
VRSM VRRM Type
V V
100 100 DSS 20-01AC
Symbol Conditions Characteristic Values
typ. max.
IR TVJ = 25°C VR= VRRM 300 µA
TVJ = 125°C VR= VRRM 2.5 mA
VF IF = 10 A; TVJ = 125°C 0.65 V
IF = 10 A; TVJ = 25°C 0.80 V
IF = 20 A; TVJ = 125°C 0.76 V
RthJC 1.7 K/W
RthCH 0.6 K/W
Note: See DSS 16-01A for electrical characteristic curves.
DS98787(07/03)
Preliminary Data Sheet
DSS 20-01AC
ISOPLUS220 Outline (2 leads)
© 2003 IXYS All rights reserved
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 %
Pulse Width = 300 µs, Duty Cycle < 2.0 %
IXYS reserves the right to change limits, conditions and dimensions.
Power Schottky Rectifier
ISOPLUS220TM
Electrically Isolated Back Surface
Features
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low cathode to tab capacitance(<15pF)
International standard package
Very low VF
Extremely low switching losses
Low IRM-values
Epoxy meets UL 94V-0
Applications
Rectifiers in switch mode power
supplies (SMPS)
Free wheeling diode in low voltage
converters
Advantages
High reliability circuit operation
Low voltage peaks for reduced
protection circuits
Low noise switching
Low losses
See DSS 20-01A data sheet for
characteristic curves
C
A
C
A
ISOPLUS 220TM
Isolated back surface*
Symbol Conditions Maximum Ratings
IFRMS 35 A
IFAV TC = 140°C; rectangular, d = 0.5 20 A
IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine 120 A
EAS IAS = 8 A; L = 180 µH; TVJ = 25°C; non repetitive 7 mJ
IAR VA =1.5 • VRRM typical; f=10 kHz; repetitive 0.8 A
(dv/dt)cr 5000 V/µs
TVJ -55...+175 °C
TVJM 175 °C
Tstg -55...+150 °C
TL1.6 mm (0.063 in) from case for 10 s 260 °C
Ptot TC = 25°C90W
VISOL 50/60Hz RMS; IISOL< 1 mA 2500 V~
FCMounting force 11... 65 / 2.4 ...11 N/lb
Weight typical 3 g
IFAV = 20 A
VRRM = 100 V
VF= 0.65 V
DSS 20-01AC
VRSM VRRM Type
V V
100 100 DSS 20-01AC
Symbol Conditions Characteristic Values
typ. max.
IR TVJ = 25°C VR= VRRM 300 µA
TVJ = 125°C VR= VRRM 2.5 mA
VF IF = 10 A; TVJ = 125°C 0.65 V
IF = 10 A; TVJ = 25°C 0.80 V
IF = 20 A; TVJ = 125°C 0.76 V
RthJC 1.7 K/W
RthCH 0.6 K/W
Note: See DSS 16-01A for electrical characteristic curves.
DS98787(07/03)
Preliminary Data Sheet
DSS 20-01AC
ISOPLUS220 Outline (2 leads)