STA SGS-THOMSON TXN/TYN 0512 ---> MICROELECTRONICS TXN/TYN 1012 SCR FEATURES s HIGH SURGE CAPABILITY a HIGH ON-STATE CURRENT A | K a HIGH STABILITY AND RELIABILITY 6 a TXN Serie: INSULATED VOLTAGE = 2500V Rms) (UL RECOGNIZED : E81734) ff DESCRIPTION The TYN/TXN 0512 ---> TYN/TXN 1012 Family of Silicon Controlled Rectifiers uses a high per- K formance glass passivated technology. A G This general purpose Family of Silicon Controlled TO 220 AB Rectifiers is designed for power supplies up to (Plastic) 400Hz on resistive or inductive load. ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit IT(RMS) AMS on-state current TXN | Tc=80C 12 A (180 conduction angle) TYN | Tc=90C IT(AV) Average on-state current TXN | Te=80C 8 A (180 conduction angle,single phase circuit) TYN | Tc=90C ITSM Non repetitive surge peak on-state current tp=8.3 ms 125 A ( Tj initial = 25C } tp=10 ms 120 2 lt value tp=10 ms 72 A2s dl/dt Critical rate of rise of on-state current 100 Ajus Gate supply :Iq = 150 mA diG/dt = 1 A/us Tstg Storage and operating junction temperature range - 40 to + 150 C Tj - 40 to+ 125 C Tl Maximum lead temperature for soldering during 10 s at 4.5 mm 230 C from case Symbol Parameter TYN/TXN Unit 0512 | 112 | 212 | 412 | 612 | 812 | 1012 VORM Repetitive peak off-state voltage 50 100 | 200 | 400 | 600 | 800 | 1000 Vv VRRM Tj = 125C July 1991 V5 111 TXN/TYN 0512 ---> TXN/TYN 1012 THERMAL RESISTANCES Symboi Parameter Value Unit Rth (j-a) | Junction to ambient 60 C/W Rth (j-c) DC | Junction to case for DC TXN 3.5 C/W TYN 2.5 GATE CHARACTERISTICS (maximum values) PG (AV) = 1W) Pg = 40W (tp = 20 us) leGM = 4A (tp = 20 us) VFGM = 16V (tp = 204s) VAGM= 5V. ELECTRICAL CHARACTERISTICS Symbol Test Conditions Value Unit Iet Vp=12V (DC) RL=330 Tj=25C | MAX 15 mA VGT Vp=12V (DC) RL=330 Tj=25C MAX 1.5 Vap Vb=VDRAM RL=3.3kQ Tj= 125C | MIN 0.2 tgt Vo=VpRM_ Ig = 90mA Tj=25C TYP 2 us dig/dt = 0.8A/us i Ig= 1.2 IGT Tj=25C | TYP 50 mA IH 'T= 100mA gate open Tj=25C MAX 30 mA VTM ITM= 244 tp= 380ps Tj=25C MAX 1.6 Vv lDRM VDRM Rated Tj=25C MAX 0.01 mA IRRM VRRM Rated Tie 125C 3 dV/dt Linear slope up to Vp=67%VpRM Tj= 125C | MIN 200 Vius gate open Tq Vp=67%VDRM 'TM=24A VR=25V | Tix 125C | TYP 70 us dITM/dt=30 A/us dVp/dt= 50V/us 2/5 112 ky $GS-THOMSON TXN/TYN 0512 ---> TXN/TYN 1012 Fig.1 : Maximum average power dissipation versus Fig.2 : Correlation between maximum average power average on-state current (TXN). dissipation and maximum allowable temperatures (Tamb and Tease) for different thermal resistances heatsink + contact (TXN). P (Ww) P (W) Tease (C) 14 r r 14 360 0 Csw | F75 12/- 12 2 C/W IA ~ | 1o+L Ha pe 4 10 6 C/W b Ql 180 | 8 : ve 3 ] KL Ce 120 6 J Q!+ 90 105 4 Ql +60" 4 9 | 2 , 115 : 7 Tamb ("C ar 30 Ireay) (A) amb (0) 0 1 . 1 0 125 0 2 , 6 8 10 12 14 0 20 40 60 80 100 120 140 Fig.3 : Maximum average power dissipation versus Fig.4 : Correlation between maximum average power average on-state current (TYN). dissipation and maximum allowable temperatures (Tamb and Tease) for different thermal resistances heatsink + contact (TYN). P (W) P (WwW) Tease (C) 16 16 % 360 C/W 1785 14 14 c/w 4 C/W 12- Ty I= oc 12 c/W | 95 10 "4 Q= 180 | 10 8 rai Qs 120 108 6 LC Qs: 90 6 4 Ql: 60 4 118 I | _ 4 21 Tamb ("C. 2 Q- 30 It(ay) (A) amp Co) 0 | { L 1 Oo 125 0 2 4 6 8 10 12 14 0 20 40 60 80 100 120 140 Fig.5 : Average on-state current versus case Fig.6 : Thermal transient impedance junction to ambient temperature (TXN). versus pulse duration (TXN). Vr cayy (A) Zth ( C/W) i} T (C) ara 10E-01 COMET FTE Ef 0 25 50 75 100 125 "" {OE-02 106-02 1.0E-O1 1.0E*00 1.0801 10E*02 1.0E+03 G7 SGS-THOMSON 36 TE imckorvecrnomcs 113 TXN/TYN 0512 ---> TXN/TYN 1012 Fig.7 : Average on-state current versus case temperature (TYN). Vrcay A) Tcase("C) 0 25 50 75 100 125 Fig.9 : Relative variation of gate trigger current versus junction temperature. IgtlTil Intl gtt25c] = ih Tj-25 TC) 25 2 Igt 15 mS 1 Rs th ET | peo + 0.5 t Tj (C) 1 1 i 1 0 -40-30-20-10 0 10 20 30 40 60 60 70 80 90 100110120130 Fig.11 : Non repetitive surge peak on-state current for a sinusoidal pulse with width t < 10 ms, and corresponding value of [2t. Itsm (A). 1t (A8) Tj initial 25C 100 4/5 114 i SGS-THOMSON SSA iicroELecraomcs Fig.8 Thermal transient impedance junction to ambient versus pulse duration (TYN). Zth ( C/W) 1.0E+02 I o 7 it Ta Ets secon UICC EIN CITE = 106-02 10E-01 10600 10&+01 10E*02 10*03 10E-03 Fig.10 : Non repetitive surge peak on-state curent versus number of cycles. | tga) 140 Tj initial = 25C 120 100 80 60 40 20 Number of cycles 0 1 10 100 1000 Fig12 : On-state characteristics (maximum values). l tm (A) 1000 Tj initial 25C 100 Tj max __ Tj max 10 Vto = 0.75V At -0.0360 Vrm(v) QO 1 2 3 4 5 TXN/TYN 0512 ---> TXN/TYN 1012 PACKAGE MECHANICAL DATA (in millimeters) TO 220 AB Plastic RB os ni Be oo 4,65 20.17 +) +04 | 1.25 - 0.40 10.340.1 t | n 15.2 - 0.97 t i ao ele ie 1 ns = 3 | 0.3 0.570.145 \ 2,542 0.25 1 2.54 + 0.25 2.420.3 kK AG Cooling method : by conduction (method C} Marking : type number Weight : 29 Polarity : NA Stud torque :NA 5/5 k SGS-THOMSON JF iicrostecnomies 145