BC807-16LT1 - Rectron Semiconductor Inc.

FEATURES

MECHANICAL DATA

* Case: Molded plastic

Ideally suited for automatic insertion

Epitaxial planar die construction

Complementary NPN type available(BC817)

* Epoxy: UL 94V-O rate flame retardant

* Lead: MIL-STD-202E method 208C guaranteed

* Mounting position: Any

* Weight: 0.008 gram

SOT-23

BC807-16LT1

BC807-25LT1

BC807-40LT1

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25OC ambient temperature unless otherwise specified.

0.118(3.00)

0.012(0.30)

0.020(0.50)

0.003(0.08)

0.006(0.15)

0.110(2.80)

0.019(2.00)

0.071(1.80)

0.100(2.55)

0.089(2.25)

0.020(0.50)

0.012(0.30)

0.043(1.10)

0.035(0.90)

0.004(0.10)

0.000(0.00)

SOT-23 BIPOLAR TRANSISTORS

TRANSISTOR (PNP)

2007-3

MAXIMUM RATINGS ( @ TA = 25oC unless otherwise noted )

ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )

DC current gain (VCE= -1V, IC= -100mA)

Collector cut-off current (VCB= -45V, IE=0)

Collector cut-off current (VCE= -40V, IB=0)

Emitter cut-off current (VEB= -4V, IC=0)

Collector-emitter saturation voltage (IC= -500mA, IB= -50mA)

Base-emitter saturation voltage (IC= -500mA, IB= -50mA)

Transition frequency (VCE= -5V, IC= -10mA, f= 100MHZ)

CHARACTERISTICS

MARKING:

SYMBOL UNITS

-

-0.2

-0.1

mA

V

Collector-base breakdown voltage (IC= -10mA, IE=0)

Collector-emitter breakdown voltage (IC= -10mA, IB=0)

Emitter-base breakdown voltage (IE= -1mA, IC=0)

VCBO

VCEO

VEBO

IEBO

hFE(1)

ICBO

ICEO

VCE(sat)

VBE(sat)

fT

MAX

-50

-45

-5

-

160

100

MIN

16LT1 25LT1 40LT1 16LT1 25LT1 40LT1

0.055(1.40)

0.047(1.20)

- -0.1

-50

-45

-0.5

-55 -150

0.3

-5

-

-1.2

MHZ

-0.7

400100 250250 600

BASE

EMITTER

COLLECTOR

*

1

2

3

2

3

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Collector current-continuous

Collector dissipation

Junction and storage temperature

CHARACTERISTICS VALUESYMBOL UNITS

A

W

oC

V

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

VCBO

VCEO

VEBO

TJ,Tstg

IC

PC

16LT1--5A; 25LT1--5B; 40LT1--5C

RATING AND CHARACTERISTICS CURVES ( BC807-16LT1/-25LT1/-40LT1 )

Figure2. Gain-Bandwidth Product vs.

Collector Current

Figure4. DC Current Gain vs Collector Current

-I

C

, COLLECTOR CURRENT (mA)

Figure1. Power Derating Curve

T

SB,

SUBSTRATE TEMPERATURE(

O

C)

-Ic, COLLECTOR CURRENT (mA)

Figure3. Collector Sat Voltage vs Collector Current

-Ic,COLLECTOR CURRENT(mA)

f

T

, GAIN BANDWIDTH PRODUCT (MH

Z

)

P

d

, POWER DISSIPATION (mW) -V

CESAT

, COLLECTOR SATURATION VOLTAGE (V)

h

FE

, DC CURRENT GAIN

0

100

300

400

100 200

200

100

1000

10

1 1000

10 100

0.2

0.3

0.4

0.5

0.1

0

0.1 110 100 1000

100 1000

110

10

0.1

100

1000

0

20

40

60

80

100

Figure5. Typical Emitter-Collector Characteristics Figure6. Typical Emitter-Collector Characteristics

-VCE, COLLECTOR - EMITTER VOLTAGE (V) -VCE, COLLECTOR-EMITTER VOLTAGE (V)

-Ic, COLLECTOR CURRENT (mA)

21

0

00 10 20

100

200

300

400

500

TA=25

O

C

f=20MHZ

-VCE=5.0V

1.0V

Typical

limits

at TA=25

O

C

-IC / - IB= 10

150

O

C

25

O

C

-50

O

C

150

O

C

-VCE= 1V

25

O

C

-50

O

C

-IB= 0.2mA

-IB= 0.05mA

3.2 2.8

2

2.4

1.8

1.6

1.4

1.2

0.8

0.4

0.6

0.35

0.3

0.25

0.2

0.15

0.1

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specification herein, to make corrections, modifications, enhancements or other

changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi-

lity for any errors or inaccuracies. Data sheet specifications and its information

contained are intended to provide a product description only. "Typical" paramet-

ers which may be included on RECTRON data sheets and/ or specifications ca-

n and do vary in different applications and actual performance may vary over ti-

me. Rectron Inc does not assume any liability arising out of the application or

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