PD - 95577 Logic-Level Gate Drive Advanced Process Technology l Surface Mount (IRL2505S) l Low-profile through-hole (IRL2505L) l 175C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRL2505LPbF IRL2505SPbF (R) HEXFET Power MOSFET l l D VDSS = 55V RDS(on) = 0.008 G Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRL2505L) is available for lowprofile applications. ID = 104A S D 2 Pak TO-262 Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TA = 25C PD @TC = 25C V GS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 104 Units 74 360 3.8 200 1.3 16 500 54 20 5.0 -55 to + 175 A W W W/C V mJ A mJ V/ns 300 (1.6mm from case ) C Thermal Resistance Parameter RJC RJA www.irf.com Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)** Typ. Max. Units 0.75 40 C/W 1 07/19/04 IRL2505S/LPbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. 55 1.0 59 LS Internal Source Inductance Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance V (BR)DSS RDS(on) Static Drain-to-Source On-Resistance V GS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current IGSS Typ. Max. Units Conditions V VGS = 0V, ID = 250A 0.035 V/C Reference to 25C, ID = 1mA 0.008 VGS = 10V, ID = 54A 0.010 VGS = 5.0V, ID = 54A 0.013 VGS = 4.0V, ID = 45A 2.0 V VDS = VGS, ID = 250A S VDS = 25V, ID = 54A 25 VDS = 55V, VGS = 0V A 250 VDS = 44V, VGS = 0V, T J = 150C 100 VGS = 16V nA -100 VGS = -16V 130 ID = 54A 25 nC VDS = 44V 67 VGS = 5.0V, See Fig. 6 and 13 12 VDD = 28V 160 ID = 54A ns 43 RG = 1.3, VGS = 5.0V 84 RD = 0.50, See Fig. 10 Between lead, 7.5 nH and center of die contact 5000 VGS = 0V 1100 pF VDS = 25V 390 = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS I SM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) VDD = 25V, starting TJ = 25C, L = 240H RG = 25, IAS = 54A. (See Figure 12) ISD 54A, di/dt 230A/s, VDD V(BR)DSS, TJ 175C Min. Typ. Max. Units Conditions D MOSFET symbol 104 showing the A G integral reverse 360 S p-n junction diode. 1.3 V TJ = 25C, IS = 54A, VGS = 0V 140 210 ns TJ = 25C, IF = 54A 650 970 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Pulse width 300s; duty cycle 2%. Uses IRL2505 data and test conditions Caculated continuous current based on maximum allowable junction temperature;for recommended current-handling of the package refer to Design Tip # 93-4 ** When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. 2 www.irf.com IRL2505S/LPbF 1000 1000 VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V 100 10 2.5V 20s PULSE WIDTH T J = 25C 1 0.1 1 10 100 A 2.5V 10 100 R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 3.0 TJ = 25C TJ = 175C 10 V DS= 25V 20s PULSE WIDTH 3.5 4.5 5.5 6.5 7.5 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10 A 100 Fig 2. Typical Output Characteristics 1000 1 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 20s PULSE WIDTH T J = 175C 1 0.1 VDS , Drain-to-Source Voltage (V) 2.5 VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP ID , Drain-to-Source Current (A) ID , Drain-to-Source Current (A) TOP A I D = 90A 2.5 2.0 1.5 1.0 0.5 VGS = 10V 0.0 -60 -40 -20 0 20 40 60 A 80 100 120 140 160 180 TJ , Junction Temperature (C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRL2505S/LPbF 10000 VGS , Gate-to-Source Voltage (V) 8000 C, Capacitance (pF) 15 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd Ciss 6000 Coss 4000 2000 Crss 0 10 VDS = 44V VDS = 28V 12 9 6 3 FOR TEST CIRCUIT SEE FIGURE 13 0 A 1 I D = 54A 100 0 VDS , Drain-to-Source Voltage (V) 120 160 A 200 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) 10s I D , Drain Current (A) ISD , Reverse Drain Current (A) 80 Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 TJ = 175C TJ = 25C 100 100s 1ms 10 10ms VGS = 0V 10 0.4 0.8 1.2 1.6 2.0 2.4 VSD , Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 40 A 2.8 TC = 25C TJ = 175C Single Pulse 1 1 A 10 100 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRL2505S/LPbF 120 V GS LIMITED BY PACKAGE ID , Drain Current (A) D.U.T. RG 100 80 + -V DD 5.0V Pulse Width 1 s Duty Factor 0.1 % 60 Fig 10a. Switching Time Test Circuit 40 VDS 90% 20 0 25 50 75 100 125 150 175 TC , Case Temperature ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.1 0.10 PDM 0.05 t1 0.02 0.01 0.01 0.00001 t2 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 L VDS D.U.T. RG + V - DD IAS 10 V tp 0.01 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp VDD EAS , Single Pulse Avalanche Energy (mJ) IRL2505S/LPbF 1200 TOP 1000 BOTTOM ID 22A 38A 54A 800 600 400 200 0 VDD = 25V 25 A 50 75 100 125 150 175 Starting TJ , Junction Temperature (C) VDS Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F 10 V QGS QGD D.U.T. VGS VG 3mA Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform 6 Fig 13b. Gate Charge Test Circuit www.irf.com + V - DS IRL2505S/LPbF Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + D.U.T + - - + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Driver Gate Drive P.W. Period D= + - V DD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple 5% * VGS ISD = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 IRL2505S/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information T HIS IS AN IRF 530S WIT H LOT CODE 8024 AS S E MBL E D ON WW 02, 2000 IN T H E AS S E MB LY L INE "L" INT E RNAT IONAL RE CT IF IE R LOGO Note: "P" in as s embly line pos ition indicates "Lead-F ree" PART NUMB E R F 530S AS S E MB LY LOT CODE OR INT ERNAT IONAL RECT IF IER L OGO AS S EMB LY LOT CODE 8 DAT E CODE YE AR 0 = 2000 WE E K 02 LINE L PART NUMB ER F 530S DAT E CODE P = DES IGNAT E S LEAD-F REE PRODUCT (OPT IONAL) YEAR 0 = 2000 WEEK 02 A = AS S EMB LY S IT E CODE www.irf.com IRL2505S/LPbF TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information E XAMPL E: T HIS IS AN IRL3103L L OT CODE 1789 AS S E MB L ED ON WW 19, 1997 IN T HE AS S E MB L Y LINE "C" Note: "P" in as sembly line pos ition indicates "L ead-F ree" INT ERNAT IONAL RE CT IF IER L OGO AS S EMB LY L OT CODE PART NUMB ER DAT E CODE YE AR 7 = 1997 WEE K 19 LINE C OR INT E RNAT IONAL RE CT IFIE R L OGO AS S E MBL Y LOT CODE www.irf.com PART NUMBE R DAT E CODE P = DES IGNAT ES L E AD-F RE E PRODUCT (OPT IONAL) YE AR 7 = 1997 WE E K 19 A = AS S E MB L Y S IT E CODE 9 IRL2505S/LPbF D2Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 1.65 (.065) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 1.75 (.069) 1.25 (.049) 10.90 (.429) 10.70 (.421) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 30.40 (1.197) MAX. 26.40 (1.039) 24.40 (.961) 3 4 Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 07/04 10 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/