To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI Nch POWER MOSFET FS30KMH-03 HIGH-SPEED SWITCHING USE FS30KMH-03 OUTLINE DRAWING Dimensions in mm 3 0.3 6.5 0.3 2.8 0.2 f 3.2 0.2 3.6 0.3 14 0.5 15 0.3 10 0.3 1.1 0.2 1.1 0.2 E 0.75 0.15 w 2.6 0.2 1 2 3 2.5V DRIVE VDSS .................................................................................. 30V rDS (ON) (MAX) .............................................................. 46m ID ......................................................................................... 30A Viso ................................................................................ 2000V Integrated Fast Recovery Diode (TYP.) ............. 45ns 0.75 0.15 2.54 0.25 4.5 0.2 2.54 0.25 q GATE w DRAIN e SOURCE q e TO-220FN APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol (Tc = 25C) Parameter Conditions VDSS VGSS Drain-source voltage Gate-source voltage ID IDM Drain current Drain current (Pulsed) IDA Avalanche drain current (Pulsed) IS ISM Source current Source current (Pulsed) PD T ch Maximum power dissipation Channel temperature T stg Viso Storage temperature Isolation voltage AC for 1minute, Terminal to case Weight Typical value -- VGS = 0V VDS = 0V L = 30H Ratings Unit 30 10 V V 30 120 A A 30 A 30 120 A A 20 -55 ~ +150 W C -55 ~ +150 2000 C V 2.0 g Feb.1999 MITSUBISHI Nch POWER MOSFET FS30KMH-03 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25C) Symbol Parameter V (BR) DSS IGSS Drain-source breakdown voltage Gate-source leakage current IDSS VGS (th) Drain-source leakage current Gate-source threshold voltage rDS (ON) Drain-source on-state resistance rDS (ON) VDS (ON) Drain-source on-state resistance Drain-source on-state voltage y fs Ciss Forward transfer admittance Input capacitance Coss Crss Output capacitance Reverse transfer capacitance td (on) tr Turn-on delay time Rise time td (off) Turn-off delay time tf VSD Fall time Source-drain voltage Rth (ch-c) trr Thermal resistance Reverse recovery time Limits Test conditions Unit Min. Typ. Max. 30 -- -- -- -- 0.1 V A -- 0.6 -- 0.9 0.1 1.2 mA V -- 34 46 m -- -- 43 0.51 69 0.69 m V -- -- 23 1150 -- -- S pF VDS = 10V, VGS = 0V, f = 1MH4 -- -- 260 120 -- -- pF pF Channel to case -- -- 19 95 -- -- ns ns -- 90 -- ns -- -- 100 1.0 -- 1.5 ns V -- -- -- 45 6.25 -- C/W ns ID = 1mA, VGS = 0V VGS = 10V, VDS = 0V VDS = 30V, VGS = 0V ID = 1mA, VDS = 10V ID = 15A, VGS = 4V ID = 15A, VGS = 2.5V ID = 15A, VGS = 4V ID = 15A, VDS = 5V IS = 15A, dis/dt = -50A/s PERFORMANCE CURVES DRAIN CURRENT ID (A) 32 24 16 8 0 0 50 100 150 200 102 7 5 3 2 tw = 10ms 100ms 101 7 5 3 2 100 7 5 3 2 1ms TC = 25C Single Pulse 10ms DC 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 CASE TEMPERATURE TC (C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) VGS = 5V 50 40 30 4V 2V 2.5V 2.5V 20 2V 10 VGS = 5V 20 Tc = 25C Pulse Test 3V 4V DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 2 DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 40 1.5V 16 PD = 20W 12 1.5V 8 4 Tc = 25C Pulse Test PD = 20W 0 0 1.0 2.0 3.0 4.0 5.0 DRAIN-SOURCE VOLTAGE VDS (V) 0 0 0.4 0.8 1.2 1.6 2.0 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS30KMH-03 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 50 Tc = 25C Pulse Test DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (m) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 5.0 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 4.0 3.0 2.0 ID = 50A 1.0 30A Tc = 25C Pulse Test VGS = 2.5V 40 30 4V 20 10 10A 0 1.0 2.0 3.0 TRANSFER CHARACTERISTICS (TYPICAL) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN CURRENT ID (A) Tc = 25C VDS = 10V Pulse Test 24 16 8 2 104 7 5 3 2 103 7 5 3 2 102 7 5 3 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN CURRENT ID (A) 32 0 0 5.0 GATE-SOURCE VOLTAGE VGS (V) 40 CAPACITANCE Ciss, Coss, Crss (pF) 4.0 102 7 5 4 3 VDS = 5V Pulse Test TC = 25C 75C 125C 2 101 7 5 4 3 2 0 1.0 2.0 3.0 4.0 100 0 10 5.0 2 3 4 5 7 101 2 3 4 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) Tch = 25C f = 1MHZ VGS = 0V Ciss Coss Crss SWITCHING TIME (ns) 0 103 7 5 4 3 2 102 7 5 4 3 2 3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) Tch = 25C VDD = 15V VGS = 4V RGEN = RGS = 50 101 100 td(off) tf tr td(on) 2 3 4 5 7 101 2 3 4 5 7 102 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS30KMH-03 HIGH-SPEED SWITCHING USE 5.0 SOURCE CURRENT IS (A) 3.0 VDS = 10V 20V 25V 2.0 1.0 0 4 8 12 16 30 TC = 125C 20 75C 0 0.4 0.8 1.2 1.6 2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 2.0 2 100 7 5 4 3 2 -50 0 50 100 VDS = 10V ID = 1mA 1.6 1.2 0.8 0.4 0 150 CHANNEL TEMPERATURE Tch (C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 0.4 25C 10 0 101 7 VGS = 4V ID = 1/2ID 5 Pulse Test 4 3 10-1 VGS = 0V Pulse Test 40 20 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) 50 Tch = 25C ID = 30A 4.0 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (C/W) GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 5 3 2 101 7 D = 1.0 5 0.5 3 2 0.2 100 7 5 3 2 PDM 0.1 tw 0.05 0.02 0.01 Single Pulse T D= tw T 10-1 -4 10 2 3 5710-3 2 3 5710-22 3 5710-12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999