PNP SILICON PLANAR TRANSISTOR 2N4036
TO-39
General Purpose Transistor
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION SYMBOL VALUE UNIT
Collector -Emitter Voltage VCEO 65 V
Collector -Base Voltage VCBO 90 V
Emitter Base Voltage VEBO 7.0 V
Base Current IB 0.5 A
Collector Current -Continuous IC 1.0 A
Power Dissipation @ Tc=25 deg C PD 5.0 W
Linear Derating Factor 28.6 mW/deg C
Power Dissipation @ Ta=25 deg C PD 1.0 W
Linear Derating Factor 5.72 mW/deg C
Operating & Storage Junction Tj, Tstg -65 to +200 deg C
Temperature Range
Lead Temperature 1/16" from Case TL 230 deg C
for 10 Seconds
Thermal Resistance
Junction to Case Rth (j-c) 35 deg C/W
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT
Collector -Emitter Voltage VCEO IC=10mA, IB=0 65 - V
Collector -Base Voltage VCBO IC=100uA, IE=0 90 - - V
Collector Cut off Current ICEX VCE=85V, VBE=1.5V - - 0.1 mA
ICBO VCB=90V, IE=0 - 1.0 uA
Emitter Cut off Current IEBO VBE=7V, IC=0 - 10 uA
DC Current Gain hFE 0.1mA, VCE=10V 20 - -
IC=150mA, VCE=2V 20 200
IC=150mA, VCE=10V 40 - 140
IC=500mA, VCE=10V 20 -
Collector -Emitter (sat) Voltage VCE(sat) IC=150mA, IB=15mA - 0.65 V
Base -Emitter (sat) Voltage VBE(sat) IC=150mA, IB=15mA - 1.4 V
Small- Signal Characteristics
Current Gain- High Frequency lhfel IC=50mA,VCE=10V, f=20MHz 3.0 - -
Switching Characteristics
Rise time tr IB1=15mA,IC=150mA, VCE=30V - 70 ns
Sorage time ts IB2=15mA,IC=150mA, VCE=30V - 600 ns
Fall time tf IB2=15mA,IC=150mA, VCE=30V - 100 ns
Turn-on time ton IC=150mA, VCE=30V, IB1=IB2= - 110 ns
Turn-off time toff 15mA - 700 ns
Continental Device India Limited Data Sheet Page 1 of 2
Continental Device India Limited
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