DS1265Y/AB DS1265Y/AB 8M Nonvolatile SRAM FEATURES PIN ASSIGNMENT * 10 years minimum data retention in the absence of external power NC 1 36 VCC NC 2 35 A19 A18 3 34 NC A16 4 33 A15 * Low-power CMOS operation A14 5 32 A17 * Read and write access times as fast as 70 ns A12 6 31 WE A7 7 30 A13 A6 8 29 A8 A5 9 28 A9 A4 10 27 A11 A3 11 26 OE A2 12 25 A10 A1 13 24 CE A0 14 23 DQ7 DQ0 15 22 DQ6 DQ1 16 21 DQ5 DQ2 17 20 DQ4 18 19 DQ3 * Data is automatically protected during power loss * Unlimited write cycles * Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time * Full 10% VCC operating range (DS1265Y) * Optional 5% VCC operating range (DS1265AB) * Optional industrial temperature range of -40C to +85C, designated IND GND 36-PIN ENCAPSULATED PACKAGE 740 MIL EXTENDED PIN DESCRIPTION A0 - A19 DQ0 - DQ7 CE WE OE VCC GND NC - - - - - - - - Address Inputs Data In/Data Out Chip Enable Write Enable Output Enable Power (+5V) Ground No Connect DESCRIPTION The DS1265 8M Nonvolatile SRAMs are 8,388,608-bit, fully static nonvolatile SRAMs organized as 1,048,576 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. There is no limit on the number of write cycles which can be executed and no additional support circuitry is required for microprocessor interfacing. 060598 1/8 DS1265Y/AB READ MODE DATA RETENTION MODE The DS1265 devices execute a read cycle whenever WE (Write Enable) is inactive (high) and CE (Chip Enable) and OE (Output Enable) are active (low). The unique address specified by the 20 address inputs (A0 - A19) defines which of the 1,048,576 bytes of data is accessed. Valid data will be available to the eight data output drivers within tACC (Access Time) after the last address input signal is stable, providing that CE and OE (Output Enable) access times are also satisfied. If OE and CE access times are not satisfied, then data access must be measured from the later occurring signal (CE or OE) and the limiting parameter is either tCO for CE or tOE for OE rather than tACC. The DS1265AB provides full functional capability for VCC greater than 4.75 volts and write protects by 4.5 volts. The DS1265Y provides full functional capability for VCC greater than 4.5 volts and write protects by 4.25 volts. Data is maintained in the absence of VCC without any additional support circuitry. The nonvolatile static RAMs constantly monitor VCC. Should the supply voltage decay, the NV SRAMs automatically write protect themselves, all inputs become don't care, and all outputs become high impedance. As VCC falls below approximately 3.0 volts, a power switching circuit connects the lithium energy source to RAM to retain data. During power-up, when VCC rises above approximately 3.0 volts, the power switching circuit connects external VCC to RAM and disconnects the lithium energy source. Normal RAM operation can resume after VCC exceeds 4.75 volts for the DS1265AB and 4.5 volts for the DS1265Y. WRITE MODE The DS1265 devices execute a write cycle whenever WE and CE signals are active (low) after address inputs are stable. The later occurring falling edge of CE or WE will determine the start of the write cycle. The write cycle is terminated by the earlier rising edge of CE or WE. All address inputs must be kept valid throughout the write cycle. WE must return to the high state for a minimum recovery time (tWR) before another cycle can be initiated. The OE control signal should be kept inactive (high) during write cycles to avoid bus contention. However, if the output drivers are enabled (CE and OE active) then WE will disable the outputs in tODW from its falling edge. 060598 2/8 FRESHNESS SEAL Each DS1265 device is shipped from Dallas Semiconductor with its lithium energy source disconnected, guaranteeing full energy capacity. When VCC is first applied at a level greater than VTP, the lithium energy source is enabled for battery backup operation. DS1265Y/AB ABSOLUTE MAXIMUM RATINGS* Voltage on Any Pin Relative to Ground Operating Temperature Storage Temperature Soldering Temperature -0.3V to +7.0V 0C to 70C; -40C to +85C for IND parts -40C to +70C; -40C to +85C for IND parts 260C for 10 seconds * This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability. RECOMMENDED DC OPERATING CONDITIONS PARAMETER (tA: See Note 10) SYMBOL MIN TYP MAX UNITS DS1265AB Power Supply Voltage VCC 4.75 5.0 5.25 V DS1265Y Power Supply Voltage VCC 4.5 5.0 5.5 V Logic 1 Input Voltage VIH 2.2 VCC V Logic 0 Input Voltage VIL 0 +0.8 V (VCC=5V5% for DS1265AB) (tA: See Note 10) (VCC=5V10% for DS1265Y) DC ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN MAX UNITS Input Leakage Current IIL -2.0 +2.0 A I/O Leakage Current IIO -2.0 +2.0 A Output Current @ 2.4V IOH -1.0 mA Output Current @ 0.4V IOL 2.0 mA TYP Standby Current CE=2.2V ICCS1 1.0 1.5 mA Standby Current CE=VCC-0.5V ICCS2 100 150 A Operating Current ICCO1 85 mA Write Protection Voltage (DS1265AB) VTP 4.5 4.62 4.75 V Write Protection Voltage (DS1265Y) VTP 4.25 4.37 4.5 V SYMBOL MIN TYP MAX UNITS CAPACITANCE PARAMETER NOTES NOTES (tA = 25C) Input Capacitance CIN 10 20 pF Output Capacitance CI/O 10 20 pF NOTES 060598 3/8 DS1265Y/AB AC ELECTRICAL CHARACTERISTICS (VCC=5V5% for DS1265AB) (tA: See Note 10) (VCC=5V10% for DS1265Y) DS1265AB-70 DS1265Y-70 PARAMETER DS1265AB-100 DS1265Y-100 SYMBOL MIN Read Cycle Time tRC 70 Access Time tACC 70 100 ns OE to Output Valid tOE 35 50 ns CE to Output Valid tCO 70 100 ns OE or CE to Output Active tCOE Output High-Z from Deselection tOD Output Hold from Address Change tOH 5 5 ns Write Cycle Time tWC 70 100 ns Write Pulse Width tWP 55 75 ns Address Setup Time tAW 0 0 ns Write Recovery Time tWR1 tWR2 5 15 5 15 ns 12 13 Output High-Z from WE tODW ns 5 Output Active from WE MAX MIN MAX 100 5 UNITS NOTES ns 5 25 35 25 35 ns 5 ns 5 3 tOEW 5 5 ns 5 Data Setup Time tDS 30 40 ns 4 Data Hold Time tDH1 tDH2 0 10 0 10 ns ns 12 13 TIMING DIAGRAM: READ CYCLE tRC ADDRESSES VIH VIL VIH VIL VIH VIL tOH tACC VIH CE tOD VIH OE tOE tCOE SEE NOTE 1 060598 4/8 VIH VIL tCOE DOUT VIH tCO VIL tOD VOH OUTPUT VOH VOL DATA VALID VOL DS1265Y/AB TIMING DIAGRAM: WRITE CYCLE 1 tWC ADDRESSES VIH VIL VIH VIL VIH VIL tAW CE VIL VIL tWP tWR1 WE VIH VIH VIL VIL tOEW tODW HIGH IMPEDANCE DOUT tDS tDH1 VIH VIH DIN DATA IN STABLE VIL VIL SEE NOTES 2, 3, 4, 6, 7, 8 AND 12 TIMING DIAGRAM: WRITE CYCLE 2 tWC ADDRESSES VIH VIL VIH VIL tWP tAW VIH VIL tWR2 CE VIH VIH VIL VIL VIL VIH WE VIL VIL tCOE tODW DOUT tDS tDH2 VIH VIH DATA IN STABLE DIN VIL VIL SEE NOTES 2, 3, 4, 6, 7, 8 AND 13 060598 5/8 DS1265Y/AB POWER-DOWN/POWER-UP CONDITION VCC VTP tDR 2.7V tR tF tREC tPD tPU SLEWS WITH VCC CE, WE VIH BACKUP CURRENTSUPPLIED FROM LITHIUM BATTERY SEE NOTE 11 POWER-DOWN/POWER-UP TIMING PARAMETER VCC Fail Detect to CE and WE Inactive VCC Slew from VTP to 0V SYMBOL (tA: See Note 10) MIN TYP tPD MAX UNITS NOTES 1.5 s 11 s tF 150 VCC Slew from 0V to VTP tR 150 VCC Valid to CE and WE Inactive tPU 2 ms VCC Valid to End of Write Protection tREC 125 ms s (tA = 25C) PARAMETER Expected Data Retention Time SYMBOL MIN tDR 10 TYP MAX UNITS NOTES years 9 WARNING Under no circumstances are negative undershoots, of any amplitude, allowed when device is in battery backup mode. NOTES: 1. WE is high throughout read cycle. 2. OE = VIH or VIL. If OE = VIH during write cycle, the output buffers remain in a high impedance state. 3. tWP is specified as the logical AND of CE or WE. tWP is measured from the latter of CE or WE going low to the earlier of CE or WE going high. 4. tDS is measured from the earlier of CE or WE going high. 5. These parameters are sampled with a 5 pF load and are not 100% tested. 060598 6/8 DS1265Y/AB 6. If the CE low transition occurs simultaneously with or later than the WE low transition, the output buffers remain in a high impedance state during this period. 7. If the CE high transition occurs prior to or simultaneously with the WE high transition, the output buffers remain in a high impedance state during this period. 8. If WE is low or the WE low transition occurs prior to or simultaneously with the CE low transition, the output buffers remain in a high impedance state during this period. 9. Each DS1265 has a built-in switch that disconnects the lithium source until VCC is first applied by the user. The expected tDR is defined as accumulative time in the absence of VCC starting from the time power is first applied by the user. 10. All AC and DC electrical characteristics are valid over the full operating temperature range. For commercial products, this range is 0C to 70C. For industrial products (IND), this range is -40C to +85C. 11. In a power-down condition the voltage on any pin may not exceed the voltage on VCC. 12. tWR1, tDH1 are measured from WE going high. 13. tWR2, tDH2 are measured from CE going high. DC TEST CONDITIONS AC TEST CONDITIONS Outputs Open All voltages are referenced to ground Output Load: 100 pF + 1TTL Gate Input Pulse Levels: 0V to 3.0V Timing Measurement Reference Levels Input: 1.5V Output: 1.5V Input pulse Rise and Fall Times: 5 ns ORDERING INFORMATION DS1265TTP- SSS - III Operating Temperature Range blank: 0 C to 70C IND: -40 C to +85C Access Speed 70 ns 70: 100: 100 ns Package Type blank: 36-pin 600 mil DIP VCC Tolerance AB: 5% Y: 10% 060598 7/8 DS1265Y/AB DS1265Y/AB NONVOLATILE SRAM 36-PIN 740 MIL EXTENDED MODULE, LONG PKG 36-PIN DIM MIN MAX A IN. MM 2.080 52.83 2.100 53.34 B IN. MM 0.720 18.29 0.740 18.80 C IN. MM 0.355 9.02 0.405 10.29 D IN. MM 0.180 4.57 0.210 5.33 E IN. MM 0.015 0.38 0.025 0.63 F IN. MM 0.120 3.05 0.150 4.06 G IN. MM 0.090 2.29 0.110 2.79 H IN. MM 0.590 14.99 0.630 16.00 J IN. MM 0.008 0.20 0.012 0.30 K IN. MM 0.015 0.38 0.021 0.53 1 A C F D K J E H B 060598 8/8 G