TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/368 DEVICES LEVELS 2N3439 2N3439L 2N3439UA * 2N3440 * 2N3440L * 2N3440UA JAN JANTX JANTXV * Also Qualified for JANS level. * JANS ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol 2N3439 2N3440 Unit Collector-Emitter Voltage VCEO 350 250 Vdc Collector-Base Voltage VCBO 450 300 Vdc Emitter-Base Voltage VEBO 7.0 Vdc IC 1.0 0.8 5.0 2.0 -65 to +200 Adc Collector Current Total Power Dissipation @ TA = +25C (1) @ TC = +25C (2) UA @ TSP = +25C (3) Operating & Storage Temperature Range NOTES: 1) Derate linearly @ 4.57mW/C for TA > +25C 2) Derate linearly @ 28.5mW/C for TC > +25C 3) Derate linearly @ 14mW/C for TSP > +25C PT Top , Tstg W C TO-5 2N3439L, 2N3440L ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise noted) Parameters / Test Conditions Symbol Min. V(BR)CEO 350 250 Max. Unit OFF CHARACTERTICS Collector-Emitter Breakdown Voltage IC = 10mAdc 2N3439 / L / UA RBB1 = 470;VBB1 = 6V 2N3440 / L / UA L = 25mH (min); f = 30 - 60Hz Collector-Emitter Cutoff Current VCE = 300Vdc VCE = 200Vdc 2N3439 / L / UA 2N3440 / L / UA Emitter-Base Cutoff Current VEB = 7.0Vdc Collector-Emitter Cutoff Current VCE = 450Vdc, VBE = -1.5Vdc VCE = 300Vdc, VBE = -1.5Vdc Collector-Base Cutoff Current VCB = 360Vdc VCB = 250Vdc VCB = 450Vdc VCB = 300Vdc T4-LDS-0022 Rev. 3 (110088) 2N3439 / L / UA 2N3440 / L / UA 2N3439 / L / UA 2N3440 / L / UA 2N3439 / L / UA 2N3440 / L / UA Vdc TO-39 (TO-205AD) 2N3439, 2N3440 ICEO 2.0 2.0 Adc IEBO 10 Adc ICEX 5.0 5.0 Adc ICBO 2.0 2.0 5.0 5.0 Adc UA 2N3439UA, 2N3440UA Page 1 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise noted) (CONT.) Parameters / Test Conditions Symbol Min. Max. 40 30 10 160 Unit (3) ON CHARACTERISTICS Forward-Current Transfer Ratio IC = 20mAdc, VCE = 10Vdc IC = 2.0mAdc, VCE = 10Vdc IC = 0.2mAdc, VCE = 10Vdc Collector-Emitter Saturation Voltage IC = 50mAdc, IB = 4.0mAdc Base-Emitter Saturation Voltage IC = 50mAdc, IB = 4.0mAdc hFE VCE(sat) 0.5 Vdc VBE(sat) 1.3 Vdc Unit DYNAMIC CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 10mAdc, VCE = 10Vdc, f = 5.0MHz |hfe| 3.0 15 Forward Current Transfer Ratio IC = 5.0mAdc, VCE = 10V, f = 1.0kHz hfe 25 Output Capacitance VCB = 10Vdc, IE = 0, 100kHz f 1.0MHz Cobo 10 pF Input Capacitance VCB = 5.0Vdc, IE = 0, 100kHz f 1.0MHz Cibo 75 pF Max. Unit SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Min. Turn-On Time VCC = 200Vdc; IC = 20mAdc, IB1 = 2.0mAdc ton 1.0 s Turn-Off Time VCC = 200Vdc; IC = 20mAdc, IB1 = -IB2 = 2.0mAdc toff 10 s SAFE OPERATING AREA DC Tests TC = +25C, 1 Cycle, t = 1.0s Test 1 VCE = 5.0Vdc, IC = 1.0Adc Test 2 VCE = 350Vdc, IC = 14mAdc Test 3 VCE = 250Vdc, IC = 20mAdc Both Types 2N3439 / L / UA 2N3440 / L / UA (3) Pulse Test: Pulse Width = 300s, Duty Cycle 2.0% T4-LDS-0022 Rev. 3 (110088) Page 2 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PACKAGE DIMENSIONS Symbol CD CH HD LC LD LL LU L1 L2 P Q TL TW r Dimensions Millimeters Min Max Min Max .305 .335 7.75 8.51 .240 .260 6.10 6.60 .335 .370 8.51 9.40 .200 TP 5.08 TP .016 .019 0.41 0.48 See note 14 .016 .019 0.41 0.48 .050 1.27 Inches .250 .100 .030 .045 .034 .010 45 TP .029 .028 6.35 2.54 0.76 1.14 0.86 0.25 0.74 0.71 45 TP Note 6 7 8,9 8,9 8,9 8,9 7 5 3,4 3 10 7 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm). 4. Dimension TL measured from maximum HD. 5. Body contour optional within zone defined by HD, CD, and Q. 6. CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling. 7. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by direct methods or by gauging procedure. 8. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is uncontrolled in and beyond LL minimum. 9. All three leads. 10. The collector shall be internally connected to the case. 11. Dimension r (radius) applies to both inside corners of tab. 12. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. 13. Lead 1 = emitter, lead 2 = base, lead 3 = collector. 14. For transistor types 2N3439L and 2N3440L (T0-5), dimension LL = 1.5 inches (38.10 mm) min. and 1.75 inches (44.45 mm) max. For transistor types 2N3439 and 2N3440 (T0-39), dimension LL = .5 inch (12.70 mm) min. and .750 inch (19.05 mm) max. FIGURE 1. Physical dimensions (similar to TO-5 and TO-39). T4-LDS-0022 Rev. 3 (110088) Page 3 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PACKAGE DIMENSIONS NOTES: Dimensions 1. Dimensions are in inches. Symbol Inches Millimeters Note 2. Millimeters are given for general information only. Min Max Min Max 3. Dimension "CH" controls the overall package thickness. BL .215 .225 5.46 5.71 When a window lid is used, dimension "CH" must increase BL2 .225 5.71 by a minimum of .010 inch (0.254 mm) and a maximum of BW .145 .155 3.68 3.93 .040 inch (1.020 mm). BW2 .155 3.93 4. The corner shape (square, notch, radius, etc.) may vary at the CH .061 .075 1.55 1.90 3 manufacturer's option, from that shown on the drawing. L3 .003 .007 0.08 0.18 5 5. Dimensions " LW2" minimum and "L3" minimum and the LH .029 .042 0.74 1.07 appropriate castellation length define an unobstructed threeLL1 .032 .048 0.81 1.22 dimensional space traversing all of the ceramic layers in LL2 .072 .088 1.83 2.23 which a castellation was designed. (Castellations are LS .045 .055 1.14 1.39 LW .022 .028 0.56 0.71 required on bottom two layers, optional on top ceramic LW2 .006 .022 0.15 0.56 5 layer.) Dimension " LW2" maximum and "L3" maximum define the maximum width and depth of the castellation at Pin no. 1 2 3 4 any point on its surface. Measurement of these dimensions Transistor Collector Emitter Base N/C may be made prior to solder dipping. 6. The coplanarity deviation of all terminal contact points, as defined by the device seating plane, shall not exceed .006 inch (0.15mm) for solder dipped leadless chip carriers. 7. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 2. Physical dimensions, surface mount (2N3439UA, 2N3440UA) version. T4-LDS-0022 Rev. 3 (110088) Page 4 of 4