K4S641633F-RP1H - Samsung - Datasheet.Global

K4S641633F-R(B)L/N/P

Rev. 1.4 Dec. 2002

CMOS SDRAM

Revision 1.4

December 2002

4Mx16

Mobile SDRAM

(VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V)

54CSP

K4S641633F-R(B)L/N/P

Rev. 1.4 Dec. 2002

CMOS SDRAM

The K4S641633F is 67,108,864 bits synchronous high data

rate Dynamic RAM organized as 4 x 1,048,576 words by 16

bits, fabricated with SAMSUNG’s high performance CMOS

technology. Synchronous design allows precise cycle control

with the use of system clock and I/O transactions are possible

on every clock cycle. Range of operating frequencies, program-

mable burst length and programmable latencies allow the same

device to be useful for a variety of high bandwidth, high perfor-

mance memory system applications.

• 3.0V & 3.3V power supply.

• LVCMOS compatible with multiplexed address.

• Four banks operation.

• MRS cycle with address key programs.

-. CAS latency (1 & 2 & 3).

-. Burst length (1, 2, 4, 8 & Full page).

-. Burst type (Sequential & Interleave).

• All inputs are sampled at the positive going edge of the system

clock.

• Burst read single-bit write operation.

• DQM for masking.

• Auto refresh.

• 64ms refresh period (4K cycle).

• Commercial Temperature Operation (-25°C ~ 70°C).

Extended Temperature Operation (-25°C ~ 85°C).

Industrial Temperature Operation (-40°C ~ 85°C).

• 54balls CSP (-RXXX - Pb, -BXXX - Pb Free)

GENERAL DESCRIPTIONFEATURES

1M x 16Bit x 4 Banks SDRAM in 54CSP

* Samsung Electronics reserves the right to change products or specification without notice.

Bank Select

Data Input Register

1M x 16

Sense AMP

Output BufferI/O Control

Column Decoder

Latency & Burst Length

Programming Register

Address Register

Row Buffer

Refresh Counter

Row DecoderCol. Buffer

LRAS

LCBR

LCKE

LRAS LCBR LWE LDQM

CLK CKE CS RAS CAS WE L(U)DQM

LWE

LDQM

DQi

CLK

ADD

LCAS LWCBR

1M x 16

Timing Register

FUNCTIONAL BLOCK DIAGRAM

ORDERING INFORMATION

-R(B)L : Low Power, Operating Temp : -25°C ~ 70°C.

-R(B)N : Low Power, Operating Temp : -25°C ~ 85°C.

-R(B)P : Low Power, Operating Temp : -40°C ~ 85°C.

Note :

1. In case of 40MHz Frequency, CL1 can be supported.

Part No. Max Freq. Interface Package

K4S641633F-R(B)L/N/P75 133MHz(CL3)

105MHz(CL2) LVCMOS 54 CSP

(Pb Free)

K4S641633F-R(B)L/N/P1H 105MHz(CL2)

K4S641633F-R(B)L/N/P1L 105MHz(CL3)*1

K4S641633F-R(B)L/N/P

Rev. 1.4 Dec. 2002

CMOS SDRAM

54Ball(6x9) CSP

123789

A VSS DQ15 VSSQ VDDQ DQ0 VDD

BDQ14 DQ13 VDDQ VSSQ DQ2 DQ1

CDQ12 DQ11 VSSQ VDDQ DQ4 DQ3

DDQ10 DQ9 VDDQ VSSQ DQ6 DQ5

EDQ8 NC VSS VDD LDQM DQ7

FUDQM CLK CKE CAS RAS WE

GNC A11 A9 BA0 BA1 CS

HA8 A7 A6 A0 A1 A10

JVSS A5 A4 A3 A2 VDD

Pin Name Pin Function

CLK System Clock

CS Chip Select

CKE Clock Enable

A0 ~ A11 Address

BA0 ~ BA1Bank Select Address

RAS Row Address Strobe

CAS Column Address Strobe

WE Write Enable

L(U)DQM Data Input/Output Mask

DQ0 ~ 15 Data Input/Output

VDD/VSS Power Supply/Ground

VDDQ/VSSQ Data Output Power/Ground

Package Dimension and Pin Configuration

< Bottom View*1 >

< Top View*2 >

*2: Top View

Symbol Min Typ Max

A0.90 0.95 1.00

A10.30 0.35 0.40

E-8.00 -

E1-6.40 -

D-8.00 -

D1-6.40 -

e-0.80 -

b0.40 0.45 0.50

z- - 0.10

[Unit:mm]

5 2 16 3489 7

D/2

EE/2

Encapsulant

Max. 0.20

#A1 Ball Origin Indicator

*1: Bottom View

K4S641633F

SEC Week XXXX

K4S641633F-R(B)L/N/P

Rev. 1.4 Dec. 2002

CMOS SDRAM

DC OPERATING CONDITIONS

Recommended operating conditions(Voltage referenced to VSS = 0V, TA =Commercial, Extended, Industrial Temperature)

Note :

1. VIH (max) = 5.3V AC. The overshoot voltage duration is ≤ 3ns.

2. VIL (min) = -2.0V AC. The undershoot voltage duration is ≤ 3ns.

3. Any input 0V ≤ VIN ≤ VDDQ.

Input leakage currents include HI-Z output leakage for all bi-directional buffers with Tri-State outputs.

4. Dout is disabled, 0V ≤ VOUT ≤ VDDQ.

Parameter Symbol Min Typ Max Unit Note

Supply voltage VDD 2.7 3.0 3.6 V

VDDQ 2.7 3.0 3.6 V

Input logic high voltage VIH 2.2 3.0 VDDQ+0.3 V1

Input logic low voltage VIL -0.3 00.5 V2

Output logic high voltage VOH 2.4 - - VIOH = -2mA

Output logic low voltage VOL - - 0.4 VIOL = 2mA

Input leakage current ILI -10 -10 uA 3

ABSOLUTE MAXIMUM RATINGS

Note :

Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.

Functional operation should be restricted to recommended operating condition.

Exposure to higher than recommended voltage for extended periods of time could affect device reliability.

Parameter Symbol Value Unit

Voltage on any pin relative to Vss VIN, VOUT -1.0 ~ 4.6 V

Voltage on VDD supply relative to Vss VDD, VDDQ -1.0 ~ 4.6 V

Storage temperature TSTG -55 ~ +150 °C

Power dissipation PD1W

Short circuit current IOS 50 mA

CAPACITANCE(VDD = 3.0V or 3.3V, TA = 23°C, f = 1MHz, VREF =0.9V ± 50 mV)

Pin Symbol Min Max Unit Note

Clock CCLK 2.0 4.0 pF

RAS, CAS, WE, CS, CKE, DQM CIN 2.0 4.0 pF

Address CADD 2.0 4.0 pF

DQ0 ~ DQ15 COUT 3.5 6.0 pF

K4S641633F-R(B)L/N/P

Rev. 1.4 Dec. 2002

CMOS SDRAM

DC CHARACTERISTICS

Recommended operating conditions(Voltage referenced to VSS = 0V, TA =Commercial, Extended, Industrial Temperature)

Notes :

1. Measured with outputs open.

2. Refresh period is 64ms.

3. K4S641633F-R(B)L**

4. K4S641633F-R(B)N**

5. K4S641633F-R(B)P**

6. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ)

Parameter Symbol Test Condition Version Unit Note

-75 -1H -1L

Operating Current

(One Bank Active) ICC1 Burst length = 1

tRC ≥ tRC(min)

IO = 0 mA 60 55 55 mA 1

Precharge Standby Current

in power-down mode ICC2PCKE ≤ VIL(max), tCC = 10ns 0.5 mA

ICC2PS CKE & CLK ≤ VIL(max), tCC = ∞0.5

Precharge Standby Current

in non power-down mode

ICC2NCKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns

Input signals are changed one time during 20ns 11

ICC2NS CKE ≥ VIH(min), CLK ≤ VIL (max), tCC = ∞

Input signals are stable 8

Active Standby Current

in power-down mode ICC3PCKE ≤ VIL(max), tCC = 10ns 5mA

ICC3PS CKE & CLK ≤ VIL(max), tCC = ∞5

Active Standby Current

in non power-down mode

(One Bank Active)

ICC3NCKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns

Input signals are changed one time during 20ns 22 mA

ICC3NS CKE ≥ VIH(min), CLK ≤ VIL (max), tCC = ∞

Input signals are stable 22 mA

Operating Current

(Burst Mode) ICC4

IO = 0 mA

Page burst

4Banks Activated

tCCD = 2CLKs

90 70 70 mA 1

Refresh Current ICC5 tRC ≥ tRC(min) 135 120 120 mA 2

Self Refresh Current ICC6 CKE ≤ 0.2V

-R(B)L

400 uA

-R(B)N 4

-R(B)P 5

K4S641633F-R(B)L/N/P

Rev. 1.4 Dec. 2002

CMOS SDRAM

OPERATING AC PARAMETER(AC operating conditions unless otherwise noted)

Notes :

1. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time

and then rounding off to the next higher integer.

2. Minimum delay is required to complete write.

3. Minimum tRDL=2CLK and tDAL(=tRDL + tRP) is required to complete both of last data wite command(tRDL) and precharge

command(tRP). tRDL=1CLK can be supported only in the case under 100MHz with manual precharge mode.

4. All parts allow every cycle column address change.

5. In case of row precharge interrupt, auto precharge and read burst stop.

Parameter Symbol Version Unit Note

- 75 -1H -1L

Row active to row active delay tRRD(min) 15 19 19 ns 1

RAS to CAS delay tRCD(min) 19 19 24 ns 1

Row precharge time tRP(min) 19 19 24 ns 1

Row active time tRAS(min) 45 50 60 ns 1

tRAS(max) 100 us

Row cycle time tRC(min) 65 70 84 ns 1

Last data in to row precharge tRDL(min) 2CLK 2,3

Last data in to Active delay tDAL(min) tRDL + tRP -3

Last data in to new col. address delay tCDL(min) 1CLK 2

Last data in to burst stop tBDL(min) 1CLK 2

Col. address to col. address delay tCCD(min) 1CLK 4

Number of valid output data

CAS latency=3 2

ea 5

CAS latency=2 1

CAS latency=1 -0

AC OPERATING TEST CONDITIONS (VDD = 2.7V ~ 3.6V, TA =Commercial, Extended, Industrial Temperature)

Parameter Value Unit

AC input levels (Vih/Vil) 2.4 / 0.4 V

Input timing measurement reference level 0.5 x VDDQ V

Input rise and fall time tr/tf = 1/1 ns

Output timing measurement reference level 0.5 x VDDQ V

Output load condition See Fig. 2

VDDQ

1200Ω

870Ω

Output

30pF

VOH (DC) = 2.4V, IOH = -2mA

VOL (DC) = 0.4V, IOL = 2mA

Vtt = 0.5 x VDDQ

50Ω

Output

30pF

Z0 = 50Ω

(Fig. 2) AC output load circuit (Fig. 1) DC output load circuit

K4S641633F-R(B)L/N/P

Rev. 1.4 Dec. 2002

CMOS SDRAM

AC CHARACTERISTICS (AC operating conditions unless otherwise noted)

Notes :

1. Parameters depend on programmed CAS latency.

2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.

3. Assumed input rise and fall time (tr & tf) = 1ns.

If tr & tf is longer than 1ns, transient time compensation should be considered,

i.e., [(tr + tf)/2-1]ns should be added to the parameter.

Parameter Symbol - 75 -1H -1L Unit Note

Min Max Min Max Min Max

CLK cycle time

CAS latency=3

tCC

7.5

1000

9.5

1000

9.5

1000 ns 1

CAS latency=2 9.5 9.5 12

CAS latency=1 - - 25

CLK to valid output delay

CAS latency=3

tSAC

5.4 7 7

ns 1,2

CAS latency=2 7 7 8

CAS latency=1 - - 20

Output data hold time

CAS latency=3

tOH

2.5 2.5 2.5

ns 2

CAS latency=2 2.5 2.5 2.5

CAS latency=1 - - 2.5

CLK high pulse width tCH 2.5 3 3 ns 3

CLK low pulse width tCL 2.5 3 3 ns 3

Input setup time tSS 2.0 2.5 2.5 ns 3

Input hold time tSH 1.0 1.5 1.5 ns 3

CLK to output in Low-Z tSLZ 1 1 1 ns 2

CLK to output in Hi-Z

CAS latency=3

tSHZ

5.4 7 7

CAS latency=2 7 7 8

CAS latency=1 - - 20

Note :

1. Samsung are not designed or manufactured for use in a device or system that is used under circumstance in which human life is

potentially at stake. Please contact to the memory marketing team in samsung electronics when considering the use of a product con-

tained herein for any specific purpose, such as medical, aerospace, nuclear, military, vehicular or undersea repeater use.

K4S641633F-R(B)L/N/P

Rev. 1.4 Dec. 2002

CMOS SDRAM

SIMPLIFIED TRUTH TABLE(V=Valid, X=Don′t Care, H=Logic High, L=Logic Low)

Notes :

1. OP Code : Operand Code

A0 ~ A11 & BA0 ~ BA1 : Program keys. (@MRS)

2. MRS can be issued only at all banks precharge state.

A new command can be issued after 2 CLK cycles of MRS.

3. Auto refresh functions are the same as CBR refresh of DRAM.

The automatical precharge without row precharge command is meant by "Auto".

Auto/self refresh can be issued only at all banks precharge state.

4. BA0 ~ BA1 : Bank select addresses.

If both BA0 and BA1 are "Low" at read, write, row active and precharge, bank A is selected.

If BA0 is "Low" and BA1 is "High" at read, write, row active and precharge, bank B is selected.

If BA0 is "High" and BA1 is "Low" at read, write, row active and precharge, bank C is selected.

If both BA0 and BA1 are "High" at read, write, row active and precharge, bank D is selected.

If A10/AP is "High" at row precharge, BA0 and BA1 is ignored and all banks are selected.

5. During burst read or write with auto precharge, new read/write command can not be issued.

Another bank read/write command can be issued after the end of burst.

New row active of the associated bank can be issued at tRP after the end of burst.

6. Burst stop command is valid at every burst length.

7. DQM sampled at the positive going edge of CLK masks the data-in at that same CLK in write operation (Write DQM latency

is 0), but in read operation it makes the data-out Hi-Z state after 2 CLK cycles. (Read DQM latency is 2).

COMMAND CKEn-1 CKEn CS RAS CAS WE DQM BA0,1 A10/AP A11,

A9 ~ A 0Note

Refresh

Auto Refresh HHL L L HXX3

Self

Refresh

Entry L 3

Exit LHLHHHXX3

HX X X 3

Bank Active & Row Addr. HXL L HHX V Row Address

Read &

Column Address Auto Precharge Disable HXLHLHX V LColumn

Address

(A0~A7)

Auto Precharge Enable H4, 5

Write &

Column Address Auto Precharge Disable HXLHL L X V LColumn

Address

(A0~A7)

Auto Precharge Enable H4, 5

Burst Stop HXLHHLXX6

Precharge Bank Selection HXL L HLXVLX

All Banks XH

Clock Suspend or

Active Power Down Entry HLHX X X XXLV V V

Exit LHX X X X X

Precharge Power Down Mode

Entry HLHX X X X

LH H H

Exit LHHX X X X

LV V V

DQM HX VX7

No Operation Command HXHX X X X X

LH H H