MMBT2907A-G (PNP)
RoHS Device
QW-BTR03 Page 1
REV:B
Features
-Epitaxial planar die construction
-Device is designed as a general purpose
amplifier and switching.
-Useful dynamic range exceeds to 600mA
As a switch and to 100MHz as an amplifier.
1
Base
2
Emitter
Collector
3
General Purpose Transistor
Company reserves the right to improve product design , functions and reliability without notice.
Dimensions in inches and (millimeter)
SOT-23
3
1 2
0.118(3.00)
0.110(2.80)
0.055(1.40)
0.047(1.20)
0.079(2.00)
0.071(1.80)
0.041(1.05)
0.035(0.90)
0.020(0.50)
0.012(0.30)
0.006(0.15)
0.003(0.08)
0.100(2.55)
0.089(2.25)
0.004(0.10) max
0.012(0.30)
0.020(0.50)
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current-continuous
Total device dissipation
Thermal resistance, junction to ambient
Junction temperature
Storage temperature range
UnitsSymbol
Parameter
VCBO
VCEO
VEBO
IC
PD
RθJA
TJ
TSTG
Value
-60
-60
-5
-600
250
500
150
-55 to +150
V
V
V
mA
mW
°C/W
°C
°C
Maximum Ratings (at Ta=25°C unless otherwise noted)
QW-BTR03 Page 2
REV:B
General Purpose Transistor
Company reserves the right to improve product design , functions and reliability without notice.
Electrical Characteristics (@TA=25°C unless otherwise noted)
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
Transition frequency
Delay time
Rise time
Storage time
Fall time
UnitsSymbolParameter Min.Conditions
IC=-10μA, IE=0
IC=-10mA, IB=0
IE=-10μA, IC=0
IC=-150mA, IB=-15mA
IC=-500mA, IB=-50mA
IC=-150mA, IB=-15mA
IC=-500mA, IB=-50mA
IC=-150mA, IB1=-15mA
VCE=-30V
IB1=-IB2=-15mA
VCE=-6V, IC=-150mA
Max.
V(BR)CBO
VCE(sat)
fT
td
tr
tS
tf
V(BR)CEO
V(BR)EBO
VBE(sat)
-60
-60
-5
200
DC current gain
VCE=-10V, IC=-0.1mA
VCE=-10V, IC=-150mA
VCE=-10V, IC=-1mA
hFE(1)
100
100
75
300
-0.4
-1.6
-1.3
-2.6
10
25
225
60
V
V
V
V
V
Collector cut-off current
Base cut-off current
Collector cut-off current
VCB=-50V, IE=0
VEB=-3V, IC=0
VCE=-30V, VBE(off)=-0.5V
ICBO
IEBO
ICEX
-20
-10
-50
nA
nA
nA
MHz
nS
nS
nS
nS
Notes:
1. Pulse test: Pulse Width ≤300μs, Duty Cycle ≤ 2.0%.
hFE(2)
hFE(3)
VCE=-20V, IC=-50mA
f=100MHz
VCE=-10V, IC=-10mA
VCE=-10V, IC=-500mA 50
100
hFE(4)
hFE(5)
(Note 1)
(Note 1)
(Note 1)
RATING AND CHARACTERISTIC CURVES (MMBT2907A-G)
Page 3
QW-BTR03
REV:B
General Purpose Transistor
Company reserves the right to improve product design , functions and reliability without notice.
Fig.1 - Static Characteristic
Collector Current, IC (mA)
Collector-Emitter Voltage, VCE (V)
-0.00
-0.05
-0.10
-0.15
-0.25
-0.20
-2 -4 -6 -8 -10 -12
COMMON
EMITTER
Ta=25°C
-0
IB=-80 Aμ
-800μA
-720μA
-640μA
-560μA
-480μA
-400μA
-320μA
-240μA
Collector Current, Ic (mA)
DC Current Gain, hFE
-0.1 -1 -10 -600
0
Fig.2 - hFE — IC
100
200
300
400
500
Ta=100°C
Ta=25°C
COMMON EMITTER
VCE=-10V
-100
-600
Collector Current, Ic (mA)
-0.0
-1 -10
Fig.3 - VCEsat — IC
-0.9
-100
-0.3
-0.6
β = 10
Collector -Emitter Saturation
Voltage, VCEsat (V)
-600
Collector Current, Ic (mA)
-0.0
-1
-0.8
-10
-1.2
-100
Ta=100°C
Ta= 25°C
-0.4
β = 10
Base - Emitter Saturation
Voltage, VBEsat (V)
Fig.4 - VBEsat — IC
Ta=100°C
Ta= 25°C
-160μA
Page 4
QW-BTR03
REV:B
RATING AND CHARACTERISTIC CURVES (MMBT2907A-G)
General Purpose Transistor
Company reserves the right to improve product design , functions and reliability without notice.
-1
Fig.5 - ICVBE —
Base - Emmiter Voltage, VBE (V)
-0.2 -0.4 -0.8-0.6 -0.0
-0.1
-10
-100
-600
-1.0
Ta=100°C
Ta= 25°C
COMMON EMITTER
VCE=-10V
Collector Current, Ic (mA)
Fig.6 - Cob/Cib — VCB/VEB
Capacitance, C (pF)
-0.1 -1 -10 -20
0
10
100
Reverse Voltge, V (V)
Cib
Cob
f=1MHZ
IE=0/IC=0
Ta=25°C
Fig.7 - PC — Ta
Ambient Temperature, Ta (°C)
Collector Power Dissipation, Pc (mW)
0 25 50 75 100 125 150
0
100
200
250
300
150
50
Page 5
QW-BTR03
REV:B
General Purpose Transistor
Reel Taping Specification
B C dD D2D1
SOT-23
SYMBOL
A
(mm)
(inch) 2.142 ± 0.039
4.00 ± 0.10
Φ1.50 0.10±54.40 ± 1.00 13.00 ± 1.00
4.00 ± 0.10 2.00 ± 0.10
178 ± 2.00
Φ0.059 ± 0.004 7.008 ± 0.079 0.512 ± 0.039
SYMBOL
(mm)
(inch) 0. ± 0.004157 0.157 ± 0.004 0.079 ± 0.004
E F P P0P1W W1
1.75 ± 0.10
0.069 ± 0.004
3.50 ± 0.10
0.138 ± 0.004
SOT-23
3.15 ± 0.10
0.124 ± 0.004
2.77 ± 0.10
0.109 ± 0.004
1.22 ± 0.10
0.048 ± 0.004
12.30 ± 1.00
0.484 ± 0.039
8.00 0.30 /+–0.10
0.315 0.012 /+–0.004
d
F E
B
P1 P0
o
120
D1
D2
W1
P
D
A
W
T
C
Company reserves the right to improve product design , functions and reliability without notice.
Page 6
QW-BTR03
REV:B
General Purpose Transistor
Company reserves the right to improve product design , functions and reliability without notice.
Part Number
MMBT2907A-G
Marking Code
2F
Marking Code
XX
3
1 2
xx = Product type marking code
Suggested PAD Layout
SIZE
(inch)
0.031
(mm)
0.80
1.90
2.02
0.075
0.080
SOT-23
2.82 0.111
A
B
C
D
A
C
B
D
Standard Packaging
Case Type
SOT-23 3,000
REEL
( pcs )
Reel Size
(inch)
7
REEL PACK
