Mar. 2003
MITSUBISHI HVIGBT MODULES
CM1200HA-50H
HIGH POWER SWITCHING USE
INSULATED TYPE
●IC................................................................ 1200A
●VCES ....................................................... 2500V
●Insulated T ype
●1-element in a pack
APPLICATION
Inverters, Converters, DC choppers, Induction heating, DC to DC converters.
CM1200HA-50H
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
E
G
C
EC
CIRCUIT DIAGRAM
CC
EEE
C
190
171
57
±0.25
57
±0.25
57
±0.25
20
40
124
±0.25
140
6 - M8 NUTS
8 - φ 7MOUNTING HOLES
G
E
C
CM
41.25
20.25
79.4
3 - M4 NUTS
28
30
15
40
5.2
61.5 61.5
13
5
38
LABEL
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
http://store.iiic.cc/
Mar. 2003
MITSUBISHI HVIGBT MODULES
CM1200HA-50H
HIGH POWER SWITCHING USE
INSULATED TYPE
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
MAXIMUM RATINGS (Tj = 25°C)
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Mass
VGE = 0V
VCE = 0V
DC, TC = 80°C
Pulse (Note 1)
Pulse (Note 1)
TC = 25°C, IGBT part —
—
Charged part to base plate, rms, sinusoidal, AC 60Hz 1min.
Main terminals screw M8
Mounting screw M6
Auxiliary terminals screw M4
Typical value
Collector current
Emitter current
2500
±20
1200
2400
1200
2400
10400
–40 ~ +150
–40 ~ +125
6000
6.67 ~ 13.00
2.84 ~ 6.00
0.88 ~ 2.00
2.2
Symbol Item Conditions UnitRatings V
V
A
A
A
A
W
°C
°C
V
N·m
N·m
N·m
kg
VCES
VGES
IC
ICM
IE
(Note 2)
IEM
(Note 2)
PC
(Note 3)
Tj
Tstg
Viso
—
—
V
V
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
Tj = 25°C
Tj = 125°C
VCC = 1250V, IC = 1200A, VGE = 15V
VCC = 1250V, IC = 1200A
VGE1 = VGE2 = 15V
RG = 2.5Ω
Resistive load switching operation
IE = 1200A, VGE = 0V
IE = 1200A
die / dt = –2400A / µs
Junction to case, IGBT part
Junction to case, FWDi part
Case to fin, conductive grease applied
IC = 120mA, VCE = 10V
IC = 1200A, VGE = 15V (Note 4)
VCE = 10V
VGE = 0V
Collector cutoff current
Gate-emitter
threshold voltage
Gate-leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Contact thermal resistance
Min Typ Max
15
0.5
4.16
—
—
—
—
—
1.60
2.00
2.50
1.00
3.77
1.20
—
0.012
0.024
—
mA
µA
nF
nF
nF
µC
µs
µs
µs
µs
V
µs
µC
K/W
K/W
K/W
—
—
3.20
3.60
120
13.2
4.0
5.4
—
—
—
—
2.90
—
250
—
—
0.006
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
ICES
IGES
Cies
Coes
Cres
QG
td (on)
tr
td (off)
tf
VEC
(Note 2)
trr
(Note 2)
Qrr
(Note 2)
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Symbol Item Conditions
VGE(th)
VCE(sat)
Limits Unit
6.0
4.5
Note 1. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.
2. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
3. Junction temperature (T j) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
7.5
Thermal resistance
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
http://store.iiic.cc/
Mar. 2003
MITSUBISHI HVIGBT MODULES
CM1200HA-50H
HIGH POWER SWITCHING USE
INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
2400
800
400
0100 246
1200
8
2000
1600
2400
800
400
0200 4812
1200
16
2000
1600
0
5
4
3
2
1
24000 400 1200800 1600 2000 0 20161284
10
8
6
4
2
0
T
j
= 25°C
I
C
= 2400A
I
C
= 1200A
I
C
= 480A
10
1
2310
–1
5710
0
23 5710
1
23 5710
2
10
3
7
5
3
2
10
2
7
5
3
2
7
5
3
2
10
0
C
ies
C
oes
C
res
V
GE
= 0V, T
j
= 25°C
C
ies,
C
oes
: f = 100kHz
C
res
: f = 1MHz
T
j
= 25°C
V
GE
= 13V V
GE
= 11V
V
GE
= 10V
V
GE
= 9V
V
GE
= 8V
V
GE
= 7V
V
GE
= 12V
V
GE
= 14V
V
GE
= 15V
V
GE
= 20V
V
CE
= 10V
T
j
= 25°C
T
j
= 125°C
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
CAPACITANCE CHARACTERISTICS
(TYPICAL)
CAPACITANCE C
ies
, C
oes
, C
res
(nF)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT I
C
(A)
TRANSFER CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT I
C
(A)
GATE-EMITTER VOLTAGE V
GE
(V)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE(sat)
(V)
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE(sat)
(V)
GATE-EMITTER VOLTAGE V
GE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
24000 400 1200800 1600 2000
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
EMITTER CURRENT I
E
(A)
3
4
5
2
1
0
T
j
= 25°C
T
j
= 125°C
http://store.iiic.cc/
Mar. 2003
MITSUBISHI HVIGBT MODULES
CM1200HA-50H
HIGH POWER SWITCHING USE
INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
7
5
3
2
710
2
10
–1
7
23 5710
3
23 5
5
5
3
2
10
0
5
7
5
3
2
710
2
10
–1
7
23 5710
3
23 5
5
5
3
2
10
0
5
t
d(off)
V
CC
= 1250V, V
GE
= ±15V
R
G
= 2.5Ω, T
j
= 125°C
Inductive load
t
d(on)
t
r
t
f
V
CC
= 1250V, T
j
= 125°C
Inductive load
V
GE
= ±15V, R
G
= 2.5Ω
t
rr
I
rr
7
5
3
2
10
2
7
5
5
3
2
10
3
10
–2
10
–3
10
–2
10
–1
10
0
7
5
3
2
10
–1
7
5
3
2
10
0
10
1
7
5
3
2
23 57 23 57 23 57
Single Pulse
T
C
= 25°C
R
th(j – c)Q
= 0.012K/W
R
th(j – c)R
= 0.024K/W
20
16
12
8
4
08000 10000600002000 4000
V
CC
= 1250V
I
C
= 1200A
HALF-BRIDGE
SWITCHING TIME CHARACTERISTICS
(TYPICAL)
SWITCHING TIMES (µs)
COLLECTOR CURRENT I
C
(A)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
REVERSE RECOVERY TIME t
rr
(µs)
EMITTER CURRENT I
E
(A)
REVERSE RECOVERY CURRENT I
rr
(A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th(j – c)
TIME (s)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
GATE-EMITTER VOLTAGE V
GE
(V)
GATE CHARGE Q
G
(nC)
3.0
2.5
2.0
1.5
1.0
0.5
00 5 10 15 20 3025
GATE RESISTANCE (Ω)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
SWITCHING ENERGY (J/P)
0
0.5
1.0
1.5
2.0
0 500 1000 1500
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
CURRENT (A)
SWITCHING ENERGY (J/P)
V
CC
= 1250V, V
GE
= ±15V,
R
G
= 2.5Ω, Tj = 125°C,
Inductive load E
on
E
off
E
rec
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