SIMOPAC(R) Module BSM 121 AR VDS = 200 V ID = 130 A R DS(on) = 20 m Power module Single switch N channel Enhancement mode Package with insulated metal base plate 1) Package outline/Circuit diagram: 1 Type Ordering Code BSM 121 AR C67076-S1014-A2 Maximum Ratings Parameter Symbol Values Unit Drain-source voltage VDS 200 V Drain-gate voltage, RGS = 20 k VDGR 200 Gate-source voltage VGS 20 Continuous drain current, TC = 25 C ID 130 Pulsed drain current, TC = 25 C ID puls 390 Operating and storage temperature range Tj, Tstg - 55 ... + 150 C Power dissipation, TC = 25 C Ptot 700 W Thermal resistance Chip-case Case-heat sink Rth JC Rth CH 0.18 0.05 Insulation test voltage2), t = 1 min. Vis 2500 Vac Creepage distance, drain-source - 16 mm Clearance, drain-source - 11 DIN humidity category, DIN 40 040 - F IEC climatic category, DIN IEC 68-1 - 55/150/56 1) 2) A K/W - See chapter Package Outline and Circuit Diagrams. Insulation test voltage between drain and base plate referred to standard climate 23/50 in acc. with DIN 50 014, IEC 146, para. 492.1. Semiconductor Group 31 03.96 BSM 121 AR Electrical Characteristics at Tj = 25 C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain-source breakdown voltage VGS = 0, ID = 0.25 mA V(BR)DSS Gate threshold voltage VGS = VDS, ID = 1 mA VGS(th) Zero gate voltage drain current VDS = 200 V, VGS = 0 Tj = 25 C Tj = 125 C I DSS Gate-source leakage current VGS = 20 V, VDS = 0 IGSS Drain-source on-state resistance VGS = 10 V, ID = 80 A RDS(on) V 200 - - 2.1 3.0 4.0 A - - 50 300 250 1000 - 10 100 nA m - 18 20 gfs 60 75 - S Input capacitance VGS = 0, VDS = 25 V, f = 1 MHz Ciss - 10 13 nF Output capacitance VGS = 0, VDS = 25 V, f = 1 MHz Coss - 3 4.5 Reverse transfer capacitance VGS = 0, VDS = 25 V, f = 1 MHz Crss - 0.7 1.0 Turn-on time ton (ton = td (on) + tr) VCC = 100 V, VGS = 10 V ID = 80 A, RGS = 3.3 td (on) - 120 - tr - 60 - Turn-off time toff (toff = td (off) + tf) VCC = 100 V, VGS = 10 V ID = 80 A, RGS = 3.3 td (off) - 240 - tf - 40 - Dynamic Characteristics Forward transconductance VDS 2 x ID x RDS(on)max., ID = 80 A Semiconductor Group 32 ns BSM 121 AR Electrical Characteristics (cont'd) at Tj = 25 C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. Reverse diode Continuous reverse drain current TC = 25 C IS Pulsed reverse drain current TC = 25 C ISM Diode forward on-voltage IF = 260 A , VGS = 0 VSD Reverse recovery time IF = IS, diF/dt = 100 A/ s, VR = 100 V trr Reverse recovery charge IF = IS, diF/dt = 100 A/ s, VR = 100 V Qrr Semiconductor Group A - - 130 - - 390 - 1.05 1.4 - 400 - V ns C - 33 4.3 - BSM 121 AR Characteristics at Tj = 25 C, unless otherwise specified. Power dissipation Ptot = f (TC) parameter: Tj = 150 C Typ. output characteristics ID = f (VDS) parameter: = 80 s pulse test Safe operating area ID = f (VDS) parameter: single pulse, TC = 25 C Tj 150 C Typ. transfer characteristic ID = f (VGS) parameter: = 80 s pulse test, VDS = 25 V Semiconductor Group 34 BSM 121 AR Continuous drain-source current ID = f (TC) parameter: VGS 10 V, T j = 150 C Drain-source breakdown voltage V(BR)DSS (Tj) = b x V(BR)DSS (25 C) Drain source on-state resistance RDS(on) = f (Tj) parameter: ID = 80 A; VGS = 10 V (spread) Typical capacitances C = f (VDS) parameter: VGS = 0, f = 1 MHz Semiconductor Group 35 BSM 121 AR Forward characteristics of reverse diode IF = f (VSD) parameter: Tj, tp = 80 s (spread) Transient thermal impedance ZthJC = f (tp) parameter: D = tp/T Semiconductor Group 36 BSM 121 AR Typ. gate charge VGS = f (Qgate) parameter: IDpuls = 200 A Semiconductor Group 37