TIP33A, TIP33C NPN High-Power Transistors Designed for general-purpose power amplifier and switching applications. Features * ESD Ratings: Machine Model, C; > 400 V * * http://onsemi.com Human Body Model, 3B; > 8000 V Epoxy Meets UL 94 V-0 @ 0.125 in Pb-Free Packages are Available* 10 AMPERE NPN SILICON POWER TRANSISTORS 60 & 100 VOLT, 80 WATTS MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage TIP33A TIP33C VCEO 60 100 Vdc Collector - Base Voltage TIP33A TIP33C VCBO 60 100 Vdc VEBO 5.0 Vdc IC 10 15 Adc Apk Base Current - Continuous IB 3.0 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 80 0.64 Watts W/C TJ, Tstg - 65 to +150 C Symbol Max Unit Thermal Resistance, Junction-to-Case RqJC 1.56 C/W Thermal Resistance, Junction-to-Ambient RqJA 35.7 C/W Emitter - Base Voltage Collector Current - Continuous - Peak (Note 1) Operating and Storage Junction Temperature Range SOT-93 (TO-218) CASE 340D STYLE 1 MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic AYWWG TIP33x Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. A Y WW TIP33x x G = Assembly Location = Year = Work Week = Device Code = A or C = Pb-Free Package ORDERING INFORMATION Device TIP33A TIP33AG TIP33C *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2005 September, 2005 - Rev. 3 1 TIP33CG Package Shipping TO-218 30 Units / Rail TO-218 (Pb-Free) 30 Units / Rail TO-218 30 Units / Rail TO-218 (Pb-Free) 30 Units / Rail Publication Order Number: TIP33C/D TIP33A, TIP33C ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 60 100 - - Vdc ICEO - 0.7 mA Collector-Emitter Cutoff Current (VCE = Rated VCEO, VEB = 0) ICES - 0.4 mA Emitter-Base Cutoff Current (VEB = 5.0 V, IC = 0) IEBO - 1.0 mA 40 20 - 100 - - 1.0 4.0 - - 1.6 3.0 OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (Note 2) (IC = 30 mA, IB = 0) TIP33A TIP33C Collector-Emitter Cutoff Current (VCE = 30 V, IB = 0) (VCE = 60 V, IB = 0) TIP33A TIP33C ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 1.0 A, VCE = 4.0 V) (IC = 3.0 A, VCE = 4.0 V) hFE Collector-Emitter Saturation Voltage (IC = 3.0 A, IB = 0.3 A) (IC = 10 A, IB = 2.5 A) VCE(sat) Base-Emitter On Voltage (IC = 3.0 A, VCE = 4.0 V) (IC = 10 A, VCE = 4.0 V) VBE(on) - Vdc Vdc DYNAMIC CHARACTERISTICS Small-Signal Current Gain (IC = 0.5 A, VCE = 10 V, f = 1.0 kHz) hfe 20 - - Current-Gain -- Bandwidth Product (IC = 0.5 A, VCE = 10 V, f = 1.0 MHz) fT 3.0 - MHz 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. http://onsemi.com 2 TIP33A, TIP33C hFE , DC CURRENT GAIN 500 VCE = 4.0 V TJ = 25C 200 100 50 20 NPN PNP 10 5.0 0.1 1.0 IC, COLLECTOR CURRENT (A) 10 Figure 1. DC Current Gain 15 10 1.0ms 5.0 3.0 2.0 1.0 0.5 0.2 0.1 1.0 10ms 300ms dc SECONDARY BREAKDOWN LIMIT BONDING WIRE LIMIT THERMAL LIMIT TC = 25C TIP33A TIP33C 2.0 3.0 5.0 7.0 10 20 30 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) 20 15 10 5.0 0 70 100 L = 200 mH IC/IB 5.0 VBE(off) = 0 to 5.0 V TC = 100C 0 Figure 2. Maximum Rated Forward Bias Safe Operating Area 20 40 60 80 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 Figure 3. Maximum Rated Forward Bias Safe Operating Area FORWARD BIAS REVERSE BIAS The Forward Bias Safe Operating Area represents the voltage and current conditions these devices can withstand during forward bias. The data is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10%, and must be derated thermally for TC > 25_C. The Reverse Bias Safe Operating Area represents the voltage and current conditions these devices can withstand during reverse biased turn-off. This rating is verified under clamped conditions so the device is never subjected to an avalanche mode. http://onsemi.com 3 TIP33A, TIP33C PACKAGE DIMENSIONS SOT-93 (TO-218) CASE 340D-02 ISSUE E C Q B U S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. E DIM A B C D E G H J K L Q S U V 4 A L 1 K 2 3 D J H MILLIMETERS MIN MAX --- 20.35 14.70 15.20 4.70 4.90 1.10 1.30 1.17 1.37 5.40 5.55 2.00 3.00 0.50 0.78 31.00 REF --- 16.20 4.00 4.10 17.80 18.20 4.00 REF 1.75 REF STYLE 1: PIN 1. 2. 3. 4. V G INCHES MIN MAX --- 0.801 0.579 0.598 0.185 0.193 0.043 0.051 0.046 0.054 0.213 0.219 0.079 0.118 0.020 0.031 1.220 REF --- 0.638 0.158 0.161 0.701 0.717 0.157 REF 0.069 BASE COLLECTOR EMITTER COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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