© Semiconductor Components Industries, LLC, 2005
September, 2005 − Rev. 3 1Publication Order Number:
TIP33C/D
TIP33A, TIP33C
NPN High−Power Transistors
Designed for general−purpose power amplifier and switching
applications.
Features
•ESD Ratings: Machine Model, C; > 400 V
Human Body Model, 3B; > 8000 V
•Epoxy Meets UL 94 V−0 @ 0.125 in
•Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector − Emitter Voltage TIP33A
TIP33C VCEO 60
100 Vdc
Collector − Base Voltage TIP33A
TIP33C VCBO 60
100 Vdc
Emitter − Base Voltage VEBO 5.0 Vdc
Collector Current − Continuous
− Peak (Note 1) IC10
15 Adc
Apk
Base Current − Continuous IB3.0 Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°CPD80
0.64 Watts
W/°C
Operating and Storage Junction
Temperature Range TJ, Tstg –65 to
+150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case RqJC 1.56 °C/W
Thermal Res istance, Junc t ion−to−Ambient RqJA 35.7 °C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
Device Package Shipping
TIP33A TO−218 30 Units / Rail
10 AMPERE
NPN SILICON
POWER TRANSISTORS
60 & 100 VOLT, 80 WATTS
ORDERING INFORMATION
TIP33C TO−218 30 Units / Rail
SOT−93 (TO−218)
CASE 340D
STYLE 1
MARKING DIAGRAM
A = Assembly Location
Y = Year
WW = Work Week
TIP33x = Device Code
x = A or C
G = Pb−Free Package
AYWWG
TIP33x
TIP33AG TO−218
(Pb−Free) 30 Units / Rail
TIP33CG 30 Units / RailTO−218
(Pb−Free)
TIP33A, TIP33C
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2
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2) TIP33A
(IC = 30 mA, IB = 0) TIP33C VCEO(sus) 60
100 −
−Vdc
Collector−Emitter Cutoff Current
(VCE = 30 V, IB = 0) TIP33A
(VCE = 60 V, IB = 0) TIP33C
ICEO − 0.7 mA
Collector−Emitter Cutoff Current
(VCE = Rated VCEO, VEB = 0) ICES − 0.4 mA
Emitter−Base Cutoff Current
(VEB = 5.0 V, IC = 0) IEBO − 1.0 mA
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 1.0 A, VCE = 4.0 V)
(IC = 3.0 A, VCE = 4.0 V)
hFE 40
20 −
100
−
Collector−Emitter Saturation Voltage
(IC = 3.0 A, IB = 0.3 A)
(IC = 10 A, IB = 2.5 A)
VCE(sat) −
−1.0
4.0
Vdc
Base−Emitter On Voltage
(IC = 3.0 A, VCE = 4.0 V)
(IC = 10 A, VCE = 4.0 V)
VBE(on) −
−1.6
3.0
Vdc
DYNAMIC CHARACTERISTICS
Small−Signal Current Gain
(IC = 0.5 A, VCE = 10 V, f = 1.0 kHz) hfe 20 − −
Current−Gain — Bandwidth Product
(IC = 0.5 A, VCE = 10 V, f = 1.0 MHz) fT3.0 − MHz
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
TIP33A, TIP33C
http://onsemi.com
3
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (A)
0.1 1.0
5.0
10
10
20
100
500
hFE, DC CURRENT GAIN
200
50
NPN
PNP
VCE = 4.0 V
TJ = 25°C
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
10 201.0 50 100
Figure 2. Maximum Rated Forward Bias
Safe Operating Area
1.0
0.1
2.0
SECONDARY BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMIT
1.0ms
dc
300ms
5.0
3.0
15
10
IC, COLLECTOR CURRENT (AMPS)
10ms
0.2
0.5
2.0 3.0 5.0 7.0 30 70
TC = 25°C
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
600 80 100
Figure 3. Maximum Rated Forward Bias
Safe Operating Area
0
10
15
20
IC, COLLECTOR CURRENT (AMPS)
5.0
20 40
L = 200 mH
IC/IB ≥ 5.0
VBE(off) = 0 to 5.0 V
TC = 100°C
TIP33A
TIP33C
FORWARD BIAS
The Forward Bias Safe Operating Area represents the
voltage and current conditions these devices can withstand
during forward bias. The data is based on TC = 25_C; TJ(pk)
is variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10%, and must be
derated thermally for TC > 25_C.
REVERSE BIAS
The Reverse Bias Safe Operating Area represents the
voltage and current conditions these devices can withstand
during reverse biased turn−off. This rating is verified under
clamped conditions so the device is never subjected to an
avalanche mode.
TIP33A, TIP33C
http://onsemi.com
4
PACKAGE DIMENSIONS
SOT−93 (TO−218)
CASE 340D−02
ISSUE E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
A
D
VG
K
SL
U
BQEC
J
H
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A−−− 20.35 −−− 0.801
B14.70 15.20 0.579 0.598
C4.70 4.90 0.185 0.193
D1.10 1.30 0.043 0.051
E1.17 1.37 0.046 0.054
G5.40 5.55 0.213 0.219
H2.00 3.00 0.079 0.118
J0.50 0.78 0.020 0.031
K31.00 REF 1.220 REF
L−−− 16.20 −−− 0.638
Q4.00 4.10 0.158 0.161
S17.80 18.20 0.701 0.717
U4.00 REF 0.157 REF
V1.75 REF 0.069
123
4
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
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TIP33C/D
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