Document Number: 94384 For technical questions, contact: diodes-tech@vishay.com www.vishay.com
Revision: 27-May-08 1
Phase Control SCR
TO-220AB FULL-PAK, 25 A
25TTS...FPPbF High Voltage Series
Vishay High Power Products
DESCRIPTION/FEATURES
The 25TTS...FPPbF High Voltage Series of
silicon controlled rectifiers are specifically
designed for medium power switching and phase
control applications. The glass passivation
technology used has reliable operation up to 140 °C junction
temperature.
Typical applications are in input rectification (soft start) and
these products are designed to be used with Vishay HPP
input diodes, switches and output rectifiers which are
available in identical package outlines. Fully isolated
package (VINS = 2500 VRMS); plastic material 94VRo.
This product has been designed and qualified for industrial
level and lead (Pb)-free (“PbF” suffix).
PRODUCT SUMMARY
VT at 16 A < 1.25 V
ITSM 200 A
VRRM 800/1200 V
(G) 3
2
(A)
1 (K)
TO-220AB FULL-PAK
Available
RoHS*
COMPLIANT
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS
Capacitive input filter TA = 55 °C, TJ = 125 °C,
common heatsink of 1 °C/W 18 22 A
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
IT(AV) Sinusoidal waveform 16 A
IRMS 25
VRRM/VDRM 800/1200 V
ITSM 300 A
VT16 A, TJ = 25 °C 1.25 V
dV/dt 500 V/µs
dI/dt 150 A/µs
TJ- 40 to 125 °C
VOLTAGE RATINGS
PART NUMBER
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
VDRM, MAXIMUM PEAK
DIRECT VOLTAGE
V
IRRM/IDRM
AT 125 °C
mA
25TTS08FPPbF 800 800 10
25TTS12FPPbF 1200 1200
* Pb containing terminations are not RoHS compliant, exemptions may apply
www.vishay.com For technical questions, contact: diodes-tech@vishay.com Document Number: 94384
2Revision: 27-May-08
25TTS...FPPbF High Voltage Series
Vishay High Power Products Phase Control SCR
TO-220AB FULL-PAK, 25 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS
VALUES UNITS
TYP. MAX.
Maximum average on-state current IT(AV) TC = 85 °C, 180° conduction half sine wave 16
A
Maximum RMS on-state current IRMS 25
Maximum peak, one-cycle,
non-repetitive surge current ITSM
10 ms sine pulse, rated VRRM applied 300
10 ms sine pulse, no voltage reapplied 350
Maximum I2t for fusing I2t10 ms sine pulse, rated VRRM applied 450 A2s
10 ms sine pulse, no voltage reapplied 630
Maximum I2√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 6300 A2√s
Maximum on-state voltage drop VTM 16 A, TJ = 25 °C 1.25 V
On-state slope resistance rtTJ = 125 °C 12.0 mΩ
Threshold voltage VT(TO) 1.0 V
Maximum reverse and direct leakage current IRM/IDM
TJ = 25 °C VR = Rated VRRM/VDRM
0.5
mA
TJ = 125 °C 10
Holding current IHAnode supply = 6 V, resistive load, initial IT = 1 A - 100
Maximum latching current ILAnode supply = 6 V, resistive load 200
Maximum rate of rise of off-state voltage dV/dt 500 V/µs
Maximum rate of rise of turned-on current dI/dt 150 A/µs
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power PGM 8.0 W
Maximum average gate power PG(AV) 2.0
Maximum peak positive gate current + IGM 1.5 A
Maximum peak negative gate voltage - VGM 10 V
Maximum required DC gate current to trigger IGT
Anode supply = 6 V, resistive load, TJ = - 10 °C 60
mAAnode supply = 6 V, resistive load, TJ = 25 °C 45
Anode supply = 6 V, resistive load, TJ = 125 °C 20
Maximum required DC gate
voltage to trigger VGT
Anode supply = 6 V, resistive load, TJ = - 10 °C 2.5
V
Anode supply = 6 V, resistive load, TJ = 25 °C 2.0
Anode supply = 6 V, resistive load, TJ = 125 °C 1.0
Maximum DC gate voltage not to trigger VGD TJ = 125 °C, VDRM = Rated value 0.25
Maximum DC gate current not to trigger IGD 2.0 mA
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Typical turn-on time tgt TJ = 25 °C 0.9
µsTypical reverse recovery time trr TJ = 125 °C 4
Typical turn-off time tq110
Document Number: 94384 For technical questions, contact: diodes-tech@vishay.com www.vishay.com
Revision: 27-May-08 3
25TTS...FPPbF High Voltage Series
Phase Control SCR
TO-220AB FULL-PAK, 25 A Vishay High Power Products
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range TJ, TStg - 40 to 125 °C
Maximum thermal resistance,
junction to case RthJC DC operation 1.5
°C/W
Maximum thermal resistance,
junction to ambient RthJA 62
Typical thermal resistance,
case to heatsink RthCS Mounting surface, smooth and greased 1.5
Approximate weight 2g
0.07 oz.
Mounting torque minimum 6 (5) kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style TO-220AB FULL-PAK (94/V0) 25TTS08FP
25TTS12FP
www.vishay.com For technical questions, contact: diodes-tech@vishay.com Document Number: 94384
4Revision: 27-May-08
25TTS...FPPbF High Voltage Series
Vishay High Power Products Phase Control SCR
TO-220AB FULL-PAK, 25 A
Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
70
80
90
100
110
120
130
0 5 10 15 20
30° 60°
90°
120°
180°
Maximum Allowable Case Temperature (°C)
Conduction Angle
Average On-state Current (A)
25TTS.. Se ries
R ( DC) = 1.5 °C / W
thJC
70
80
90
100
110
120
130
0 5 10 15 20 25 30
DC
30° 60°
90°
120° 180°
Maximum Allowable Case Temperature (°C)
Conduction Period
Average On-state Current (A)
25TTS.. Series
R (DC) = 1.5 °C/ W
thJC
0
5
10
15
20
25
048121620
RM S Li m i t
Conduction Angle
Maximum Average On-sta te Power Loss (W)
Average On-state Current (A)
180°
120°
90°
60°
30°
25TTS. . Se r i e s
T = 125°C
J
0
5
10
15
20
25
30
35
0 5 10 15 20 25 30
DC
180°
120°
90°
60°
30°
RM S Li m it
Conduction Period
Maximum Average On-state Power Loss (W)
Average On-sta te Current (A)
2 5 TTS. . Se r i e s
T = 125°C
J
150
200
250
300
350
110100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Pe a k Ha lf S
ine Wave On-state Current (A)
Initia l T = 125°C
@ 6 0 H z 0 . 00 8 3 s
@ 5 0 H z 0 . 01 0 0 s
J
25TTS. . Se r i e s
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
100
150
200
250
300
350
400
0.01 0.1 1
Pe a k Ha lf S
ine Wave On-state Current (A)
Pul se Tr a in Du ra t io n ( s)
Ma xim um Non Re p e titive Surg e Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initia l T = 125°C
No Voltage Reapplied
Ra t e d V Re a p p l i e d
RRM
J
25TTS.. Se ries
Document Number: 94384 For technical questions, contact: diodes-tech@vishay.com www.vishay.com
Revision: 27-May-08 5
25TTS...FPPbF High Voltage Series
Phase Control SCR
TO-220AB FULL-PAK, 25 A Vishay High Power Products
Fig. 7 - On-State Voltage Drop Characteristics
Fig. 8 - Thermal Impedance ZthJC Characteristics
Fig. 9 - Gate Characteristics
1
10
100
1000
012345
T = 2 5 ° C
J
Instantaneous On-state Current (A)
Insta nta neous On-sta te Vo lta g e (V)
T = 1 2 5° C
J
25TTS.. Series
0.01
0.1
1
10
0.0001 0.001 0.01 0.1 1 10
Sq u a r e W a v e Pu l se D u r a t i o n ( s)
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Steady State Value
(DC Operation)
25TTS.. Series
thJC
Si n g l e P u l se
Transient Thermal Imped anc e Z (°C/ W)
0.1
1
10
100
0.001 0.01 0.1 1 10 100
(b)
(a)
Rectangular gate pulse
(4) (3) (2) (1)
Inst a nta ne ous Ga t e Current (A)
Insta ntane ous G ate Volta ge (V)
TJ = 2 5 ° C
T
J = 125 °C
b)Recommended load line for
Frequenc y Limited b y PG(AV)
a)Recommended load line for
rated di/dt: 10 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
TJ = - 1 0 ° C
25TTS.. Se rie s
IGD
VGD
<= 30% rated di/ dt: 10 V, 65 ohms
tr = 1 µs, tp >= 6 µs
(1) PGM = 40 W, t p = 1 ms
(2) PGM = 20 W, t p = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
www.vishay.com For technical questions, contact: diodes-tech@vishay.com Document Number: 94384
6Revision: 27-May-08
25TTS...FPPbF High Voltage Series
Vishay High Power Products Phase Control SCR
TO-220AB FULL-PAK, 25 A
ORDERING INFORMATION TABLE
1- Current rating (25 = 25 A)
2- Circuit configuration:
3- Package:
4
T = Single thyristor
- Type of silicon:
5- Voltage code x 100 = VRRM
T = TO-220AB
Standard recovery rectifier
6- FULL-PAK
7-None = Standard production
PbF = Lead (Pb)-free
08 = 800 V
12 = 1200 V
Device code
51324
67
25 T T S 12 FP PbF
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95072
Part marking information http://www.vishay.com/doc?95069
Outline Dimensions
www.vishay.com Vishay Semiconductors
Revision: 20-Jul-11 1Document Number: 95072
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DIMENSIONS in millimeters
5° ± 0.5° 5° ± 0.5°
0.9
0.7 1.15
1.05
2.54 TYP.
2.54 TYP.
2.8
2.6
1.4
1.3
TYP.
10°
16.4
15.4
16.0
15.8
13.56
13.05
0.61
0.38
2.85
2.65
3.7
3.2
4.8
4.6
3.3
3.1
7.31
6.91
10.6
10.4
Hole Ø 3.4
3.1
(2 places)
R 0.7
R 0.5 Lead assignments
Diodes
1. - Anode/open
2. - Cathode
3. - Anode
Conforms to JEDEC outline TO-220 FULL-PAK
Document Number: 91000 www.vishay.com
Revision: 11-Mar-11 1
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including but not limited to the warranty expressed therein.
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