
DS30368 Rev. 2 - 2 2 of 3 BSS123W
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Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage BVDSS 100 ¾¾VVGS = 0V, ID = 250mA
Zero Gate Voltage Drain Current IDSS ¾¾
1.0
10
µA
nA
VDS = 100V, VGS = 0V
VDS = 20V, VGS = 0V
Gate-Body Leakage, Forward IGSSF ¾¾50 nA VGS = 20V, VDS = 0V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage VGS(th) 0.8 1.4 2.0 V VDS =V
GS, ID = 1mA
Static Drain-Source On-Resistance RDS (ON) ¾
¾
¾
¾
6.0
10 WVGS = 10V, ID = 0.17A
VGS = 4.5V, ID = 0.17A
Forward Transconductance gFS 80 370 ¾mS VDS = 10V, ID = 0.17A, f = 1.0KHz
Drain-Source Diode Forward Voltage VSD ¾0.84 1.3 V VGS = 0V, IS = 0.34A
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss ¾29 60 pF
VDS = 25V, VGS = 0V
f = 1.0MHz
Output Capacitance Coss ¾10 15 pF
Reverse Transfer Capacitance Crss ¾26pF
SWITCHING CHARACTERISTICS
Turn-On Rise Time tr¾¾ 8ns
VDD = 30V, ID = 0.28A,
RGEN = 50W, VGS = 10V
Turn-Off Fall Time tf¾¾16 ns
Turn-On Delay Time tD(ON) ¾¾ 8ns
Turn-Off Delay Time tD(OFF) ¾¾13 ns
Electrical Characteristics @ TA = 25°C unless otherwise specified
Notes: 2. Short duration test pulse used to minimize self-heating effect.
TCUDORPWEN
0.8
1.2
1.6
0.1 0.2
R , NORMALIZED
DS(ON)
DRAIN-SOURCE ON-RESISTANCE
I , DRAIN-SOURCE CURRENT (A)
D
Fig. 2 On-Resistance Variation with Gate Voltage
and Drain-Source Current
V=4V
GS
2.0
.4
0.30.4 0.50.6
V=3V
GS
V = 5, 6, 7, 10V
GS
0
0.2
.7
01345
I , DRAIN-SOURCE CURRENT (A)
D
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fi
. 1 On-Re
ion Characteristics
V = 4V
GS
2
0.6
0.5
0.1
0.3
0.4
V = 3V
GS
V = 10, 7, 6, 5V
GS