Rev. A/AH
2007
12
22
MMBT3904
SMD General Purpose Transistor (NPN)
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of 3
Electrical Characteristics (T
Ambient
=25ºC unless noted otherwise)
Symbol Description Min. Max. Unit Conditions
40 - VCE=1V, IC=0.1mA
70 - VCE=1V, IC=1mA
100 300 VCE=1V, IC=10mA
60 - VCE=1V, IC=50mA
hFE D.C. Current Gain
30 -
VCE=1V, IC=100mA
V(BR)CBO Collector-Base Breakdown Voltage 60 - V IC=10µA, IE=0
V(BR)CEO Collector-Emitter Breakdown Voltage 40 - V IC=1mA, IB=0
V(BR)EBO Emitter-Base Breakdown Voltage 6.0 - V IE=10µA, IC=0
- 0.2 IC=10mA, IB=1mA
VCEsat Collector-Emitter Saturation Voltage - 0.3 V IC=50mA, IB=5mA
0.65 0.85 IC=10mA, IB=1mA
VBEsat Base-Emitter Saturation Voltage - 0.95 V IC=50mA, IB=5mA
ICEV Collector-Emitter Cut-off Current - 50 nA VEB=3V, VCE=30V
IEBV Emitter-Base Cut-off Current - 50 nA VEB=3V, VCE=30V
fT Current Gain-Bandwidth Product 300 - MHz VCE=20V, IC=10mA,
f=100MHz
CCBO Collector-Base Capacitance - 4.0 pF VCB=5V, f=1.0MHz,
IE=0
CEBO Emitter-Base Capacitance - 8.0 pF VEB=0.5V, f=1.0MHz,
IC=0
NF Noise Figure - 5.0 dB
VCE=5V, IC=100µA,
RS=1kΩ,
f=10Hz to 15.7KHz
td Delay Time - 35
tr Rise Time - 35
IB1=1mA
IC=10mA
ts Storage Time - 200
tf Fall Time - 50
ns
IB1= IB2=1mA
IC=10mA