JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220 Plastic-Encapsulate Transistors
3DD13007 TRANSISTOR（ NPN ）
FEATURES
Power dissipation
P
CM : 2 W（Tamb=25℃）
Collector current
ICM: 8 A
Collector-base voltage
V(BR)CBO : 700 V
Operating and storage junction temperature range
T
J，Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic= 1mA，IE=0 700 V
Collector-emitter breakdown voltage V(BR)CEO Ic= 10mA，IB=0 400 V
Emitter-base breakdown voltage V(BR)EBO IE= 1mA，IC=0 9 V
Collector cut-off current I
CBO VCB= 700V， I
E=0 1 mA
Emitter cut-off current I
EBO VEB= 9 V， I
C=0 100 µA
hFE（1） VCE= 5V, IC= 2 A 8 40
DC current gain hFE（2） VCE=5 V, IC=5A 5 30
Collector-emitter saturation voltage VCE(sat) IC=2A,IB=0.4A 1 V
Base-emitter saturation voltage VBE(sat) IC=2A, IB= 0.4A 1.2 V
Transition frequency fT Ic=500mA,VCE=10V
f=1MHZ 4 MHZ
Collector output capacitance Cob VCE=10,IE=0，f=0.1MHz
80 pF
Fall time tf 0.7 µs
Storage time ts
Vcc=125V, Ic=5A
IB1=-IB2=1A 3 µs
CLASSIFICATION OF hFE(1)
Rank
Range 8-15 15-20 20-25 25-30 30-35 35-40
1 2 3
TO—220
1.BASE
2.COLLECTOR
3.EMITTER
D
C1
C
A
A1
b
b1
E
F
E1
L
L1
e
e1
TO-220-3L PACKAGE OUTLINE DIMENSIONS
Symbol
A
A1
b
b1
c
c1
D
E
E1
e
e1
F
L
L1
φ
Min
4.470
2.520
0.710
1.170
0.310
1.710
10.010
8.500
12.060
4.980
2.590
13.400
3.560
3.790
Max
4.670
2.820
0.910
1.370
0.530
1.370
10.310
8.900
12.460
5.180
2.890
13.800
3.960
3.890
Min
1.176
0.099
0.028
0.046
0.012
0.046
0.394
0.335
0.475
0.196
0.102
0.528
0.140
0.149
Max
0.184
0.111
0.036
0.054
0.021
0.054
0.406
0.350
0.491
0.204
0.114
0.543
0.156
0.153
Dimensions In Millimeters Dimensions In Inches
0.100TYP
2.540TYP
φ
