TOSHIBA 2SA1225 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2SA1225 POWER AMPLIFIER APPLICATIONS Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS (A) x 6.BMAX 3 ped ge @e High Transition Frequency : fp = 100 MHz (Typ.) S @ Complementary to 2SC2983 26208 z 0.95MAX. s 0.6MAX. o_o) of MAXIMUM RATINGS (Tc = 25C) 23.) 2 B23 5 =|_43 CHARACTERISTIC SYMBOL | RATING UNIT oe i (B) x . . Collector-Base Voltage VCBO 160 Vv rer 3 oeMAX. Collector-Emitter Voltage VCEO 160 Vv [al Emitter-Base Voltage VEBO 5 Vv {8 3 Collector Current Ic 1.5 A o6to.is ty 2 3|= Base Current Ip 0.3 A G.95MAX. _ nL | 0.640.15 | 0.6MAX. Collector Power Ta = 25C P 1.0 Ww 23 L 2304 Dissipation Te = 25C Cc 15 Junction Temperature Tj 150 C St T 55~ 3 orage Temperature Range Tstg 55~150 Cc a j. BASE ror (HEAT SINK) 3. EMITTER JEDEC JEITA TOSHIBA (A)2-7B1A_ (B)2-7B2A Weight : 0.36 g (Typ.) 1 2001-10-29 TOSHIBA 2SA1225 ELECTRICAL CHARACTERISTICS (Tc = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX.} UNIT Collector Cut-off Current IcBo VcB = 160V, Ip =0 |-1.0] A Emitter Cut-off Current IkBO VEB = 5V, Ic = 0 |-1.0] A Collector-Emitter Breakdown Voltage V (BR) CEO|Ic = 10mA, Ip = 0 160) | Vv Emitter-Base Breakdown Voltage V (BR) EBO|IE = 1mA, Ic = 0 5} = i Vv . hFE _ _ DC Current Gain (Note) Vcr = 5V, Ic = 100 mA 70| 240 Collector Emitter Saturation Voltage VCE (sat) |1 = 500mA, Ip = 50mA 7 {he} v Base-Emitter Voltage VBE VcE = -5V, Ic = 500mA |-10)] V Transition Frequency fp VCE = -10V, Ic = 100mA 100 | MHz . Vcp = 10V, Ip = 0, Collector Output Capacitance Cob Ff 1MHz 30 pF Note : here Classification O: 70~140, Y : 120~240 2001-10-29 TOSHIBA 2SA1225 Ic VCE COMMON EMITTER Te = 25C 20 COLLECTOR CURRENT Ic (A) 0 -2 -4 -6 -8 10 COLLECTOR-EMITTER VOLTAGE Veg (V) VCEGat) Ic COMMON EMITTER Ig/Ig = 10 Te = 100C COLLECTOR-EMITTER SATURATION VOLTAGE VoKisat) () 05 -0.003 -0.01 0.03 -0.1 -0.3 -1 -2 COLLECTOR CURRENT Ic (A) Pc Ta > Ta=Te INFINITE HEAT SINK CERAMIC SUBSTRATE 50 < 50 X 0.8 mmt @ NO HEAT SINK COLLECTOR POWER DISSIPATION Pa (Ww) 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta (C) DC CURRENT GAIN hpge (MHz) TRANSITION FREQUENCY fr Ic (A) COLLECTOR CURRENT hFE - Ic 1000 COMMON EMITTER 500 VcE =-5V 300 Te = 100C 100 25 95 50 30 10 0.003 -0.01 -0.03 -0.1 0.3 -1 -2 COLLECTOR CURRENT Ic (A) fr Ic 300 COMMON EMITTER Vcr = -10V Te = 25C 100 50 30 10 -5 -10 -30 -50 -100 -300-500 1000 COLLECTOR CURRENT Ic (mA) SAFE OPERATING AREA ~ 51 TC MAX. (PULSED) X HH get \._ Aims - a NN _iblc MAX. _\ NL} 10 msiX (CONTINUOUS) SNS -0.5 AtACH _03 DC OPERATION \ Pop tay i N NY TU LLNS -oa A 0.05 %< SINGLE NONREPETITIVE x 008 PULSE Te = 25C * 7 CURVES MUST BE DERATED LINEARLY WITH INCREASE -0.01 IN TEMPERATURE. Voro MAX. 0.005 0.3 -1 -3 -10 -30 -100 300 COLLECTOR-EMITTER VOLTAGE VcE (V) 2001-10-29 TOSHIBA 2SA1225 RESTRICTIONS ON PRODUCT USE 000707EAA @ TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc.. @ The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 4 2001-10-29