© 2010 IXYS All rights reserved 1 - 8
20101103c
MIXA20WB1200TML
IXYS reserves the right to change limits, test conditions and dimensions.
Converter - Brake - Inverter
Module
XPT IGBT
Three Phase
Rectifier
Brake
Chopper
Three Phase
Inverter
VRRM = 1600 V VCES = 1200 V VCES = 1200 V
IDAVM25 = 150 A IC25 = 17 A IC25 = 28 A
IFSM = 320 A VCE(sat) = 1.8 V VCE(sat) = 1.8 V
Pin configuration see outlines.
Features:
• High level of integration - only one
power semiconductor module required
for the whole drive
• Rugged XPT design
(Xtreme light Punch Through) results in:
- short circuit rated for 10 µsec.
- very low gate charge
- square RBSOA @ 3x IC
- low EMI
• Thin wafer technology combined with
the XPT design results in a competitive
low VCE(sat)
• Temperature sense included
• SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
Application:
• AC motor drives
• Pumps, Fans
• Washing machines
• Air-conditioning system
• Inverter and power supplies
Package:
• DCB based "E1-Pack"
• Assembly height is 17 mm
• Insulated base plate
• UL registered E72873
Part name (Marking on product)
MIXA20WB1200TML
E72873
© 2010 IXYS All rights reserved 2 - 8
20101103c
MIXA20WB1200TML
IXYS reserves the right to change limits, test conditions and dimensions.
Ouput Inverter T1 - T6
Ratings
Symbol Definitions Conditions min. typ. max. Unit
VCES collector emitter voltage TVJ = 25°C 1200 V
VGES
VGEM
max. DC gate voltage
max. transient collector gate voltage
continuous
transient
±20
±30
V
V
IC25
IC80
collector current TC = 25°C
TC = 80°C
28
20
A
A
Ptot total power dissipation TC = 25°C 100 W
VCE(sat) collector emitter saturation voltage IC = 16 A; VGE = 15 V TVJ = 25°C
TVJ = 125°C
1.8
2.1
2.1 V
V
VGE(th) gate emitter threshold voltage IC = 0.6 mA; VGE = VCE TVJ = 25°C 5.5 6.0 6.5 V
ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25°C
TVJ = 125°C
0.02
0.2
0.2 mA
mA
IGES gate emitter leakage current VGE = ±20 V 500 nA
QG(on) total gate charge VCE = 600 V; VGE = 15 V; IC = 15 A 48 nC
td(on)
tr
td(off)
tf
Eon
Eoff
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
inductive load TVJ = 125°C
VCE = 600 V; IC = 15 A
VGE = ±15 V; RG = 56 W
70
40
250
100
1.55
1.7
ns
ns
ns
ns
mJ
mJ
RBSOA reverse bias safe operating area
V
GE
= ±15 V; R
G
= 56 W; V
CEK
= 1200 V
TVJ = 125°C
45 A
ISC
(SCSOA)
short circuit safe operating area VCE = 900 V; VGE = ±15 V; TVJ = 125°C
RG = 56 W; tp = 10 µs; non-repetitive
60 A
RthJC
RthCH
thermal resistance junction to case
thermal resistance case to heatsink
(per IGBT)
0.42
1.26 K/W
K/W
Output Inverter D1 - D6
Ratings
Symbol Definitions Conditions min. typ. max. Unit
VRRM max. repetitve reverse voltage TVJ = 25°C 1200 V
IF25
IF80
forward current TC = 25°C
TC = 80°C
33
22
A
A
VFforward voltage IF = 20 A; VGE = 0 V TVJ = 25°C
TVJ = 125°C
1.95
1.95
2.2 V
V
Qrr
IRM
trr
Erec
reverse recovery charge
max. reverse recovery current
reverse recovery time
reverse recovery energy
VR = 600 V
diF /dt = -400 A/µs TVJ = 125°C
IF = 20 A; VGE = 0 V
3
20
350
0.7
µC
A
ns
mJ
RthJC
RthCH
thermal resistance junction to case
thermal resistance case to heatsink
(per diode)
0.5
1.5 K/W
K/W
© 2010 IXYS All rights reserved 3 - 8
20101103c
MIXA20WB1200TML
IXYS reserves the right to change limits, test conditions and dimensions.
Brake T7
Ratings
Symbol Definitions Conditions min. typ. max. Unit
VCES collector emitter voltage TVJ = 25°C 1200 V
VGES
VGEM
max. DC gate voltage
max. transient collector gate voltage
continuous
transient
±20
±30
V
V
IC25
IC80
collector current TC = 25°C
TC = 80°C
17
12
A
A
Ptot total power dissipation TC = 25°C 63 W
VCE(sat) collector emitter saturation voltage IC = 9 A; VGE = 15 V TVJ = 25°C
TVJ = 125°C
1.8
2.1
2.1 V
V
VGE(th) gate emitter threshold voltage IC = 0.3 mA; VGE = VCE TVJ = 25°C 5.5 6.0 6.5 V
ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25°C
TVJ = 125°C
0.01
0.1
0.1 mA
mA
IGES gate emitter leakage current VGE = ±20 V 500 nA
QG(on) total gate charge VCE = 600 V; VGE = 15 V; IC = 10 A 27 nC
td(on)
tr
td(off)
tf
Eon
Eoff
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
inductive load TVJ = 125°C
VCE = 600 V; IC = 10 A
VGE = ±15 V; RG = 100 W
70
40
250
100
1.1
1.1
ns
ns
ns
ns
mJ
mJ
RBSOA reverse bias safe operating area
V
GE
= ±15 V; R
G
= 100 W; V
CEK
= 1200 V
TVJ = 125°C
30 A
ISC
(SCSOA)
short circuit safe operating area VCE = 900 V; VGE = ±15 V; TVJ = 125°C
RG = 100 W; tp = 10 µs; non-repetitive
40 A
RthJC
RthCH
thermal resistance junction to case
thermal resistance case to heatsink
(per IGBT)
0.7
2.0 K/W
K/W
Brake Chopper D7
Ratings
Symbol Definitions Conditions min. typ. max. Unit
VRRM max. repetitive reverse voltage TVJ = 150°C 1200 V
IF25
IF80
forward current TC = 25°C
TC = 80°C
33
22
A
A
VFforward voltage IF = 20 A; VGE = 0 V TVJ = 25°C
TVJ = 125°C
1.95
1.95
2.2 V
V
IRreverse current VR = VRRM TVJ = 25°C
TVJ = 125°C
0.01
0.1
0.1 mA
mA
Qrr
IRM
trr
Erec
reverse recovery charge
max. reverse recovery current
reverse recovery time
reverse recovery energy
VR = 600 V
diF /dt = 400 A/µs TVJ = 125°C
IF = 20 A; VGE = 0 V
3
20
350
0.7
µC
A
ns
mJ
RthJC
RthCH
thermal resistance junction to case
thermal resistance case to heatsink
(per diode)
0.5
1.5 K/W
K/W
© 2010 IXYS All rights reserved 4 - 8
20101103c
MIXA20WB1200TML
IXYS reserves the right to change limits, test conditions and dimensions.
Input Rectifier Bridge D8 - D11
Ratings
Symbol Definitions Conditions min. typ. max. Unit
VRRM max. repetitive reverse voltage TVJ = 25°C 1600 V
IFAV
IDAVM
average forward current
max. average DC output current
sine 180° TC = 80°C
rect.; d = 1/3 TC = 80°C
37
105
A
A
IFSM max. forward surge current t = 10 ms; sine 50 Hz TVJ = 25°C
TVJ = 125°C
320
280
A
A
I2tI2t value for fusing t = 10 ms; sine 50 Hz TVJ = 25°C
TVJ = 125°C
510
390
A2s
A2s
Ptot total power dissipation TC = 25°C 110 W
VFforward voltage IF = 50 A TVJ = 25°C
TVJ = 125°C
1.36
1.36
1.7 V
V
IRreverse current VR = VRRM TVJ = 25°C
TVJ = 125°C 0.2
0.02 mA
mA
RthJC
RthCH
thermal resistance junction to case
thermal resistance case to heatsink
(per diode)
(per diode) 0.36
1.1 K/W
K/W
Temperature Sensor NTC
Ratings
Symbol Definitions Conditions min. typ. max. Unit
R25
B25/50
resistance TC = 25°C 4.45 4.7
3510
5.0 kW
K
Module
Ratings
Symbol Definitions Conditions min. typ. max. Unit
TVJ
TVJM
Tstg
operating temperature
max. virtual junction temperature
storage temperature
-40
-40
125
150
125
°C
°C
°C
VISOL isolation voltage IISOL < 1 mA; 50/60 Hz 2500 V~
CTI comparative tracking index -
Mdmounting torque (M4) 2.0 2.2 Nm
dS
dA
creep distance on surface
strike distance through air
12.7
7.6
mm
mm
Weight 40 g
Equivalent Circuits for Simulation
Ratings
Symbol Definitions Conditions min. typ. max. Unit
V0
R0
rectifier diode D8 - D13 TVJ = 150°C 0.88
9.0
V
mW
V0
R0
IGBT T1 - T6 TVJ = 150°C 1.1
86.3
V
mW
V0
R0
free wheeling diode D1 - D6 TVJ = 150°C 1.19
40.0
V
mW
V0
R0
IGBT T7 TVJ = 150°C 1.1
153
V
mW
V0
R0
free wheeling diode D7 TVJ = 150°C 1.19
40
V
mW
I
V
0
R
0
TC = 25°C unless otherwise stated
© 2010 IXYS All rights reserved 5 - 8
20101103c
MIXA20WB1200TML
IXYS reserves the right to change limits, test conditions and dimensions.
Part number
M = Module
I = IGBT
X = XPT
A = standard
20 = Current Rating [A]
WB = 6-Pack + 3~ Rectifier Bridge & Brake Unit
1200 = Reverse Voltage [V]
T = NTC
ML = E1-Pack
Ordering Part Name Marking on Product Delivering Mode Base Qty Ordering Code
Standard MIXA 20 WB 1200 TML MIXA20WB1200TML Box 10 508630
Circuit Diagram
Outline Drawing Dimensions in mm (1 mm = 0.0394“)
© 2010 IXYS All rights reserved 6 - 8
20101103c
MIXA20WB1200TML
IXYS reserves the right to change limits, test conditions and dimensions.
0 1 2 3
0
5
10
15
20
25
30
0 5 10 15 20 25 30 35
0
1
2
3
4
0 1 2 3 4 5
0
5
10
15
20
25
30
VCE [V]
IC
[A]
QG [nC]
VGE
[V]
9 V
11 V
5 6 7 8 9 10 11 12 13
0
5
10
15
20
25
30
0 10 20 30 40 50 60
0
5
10
15
20
13 V
40 60 80 100 120 140 160
1.2
1.6
2.0
2.4
2.8
E
[mJ]
Eon
Fig. 1 Typ. output characteristics
VCE [V]
IC
[A]
V
GE
= 15 V
17 V
19 V
Fig. 2 Typ. output characteristics
I
C
[A]
Fig. 3 Typ. tranfer characteristics
V
GE
[V]
Fig. 4 Typ. turn-on gate charge
Fig. 5 Typ. switching energy vs. collector current
E
off
Fig. 6 Typ. switching energy vs. gate resistance
R
G
[Ω]
E
[mJ]
I
C
[A]
RG = 56 Ω
VCE = 600 V
VGE = ±15 V
TVJ = 125°C
E
on
E
off
I
C
= 15 A
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
I
C
= 15 A
V
CE
= 600 V
TVJ = 125°C
TVJ = 25°C
V
GE
= 15 V
T
VJ
= 125°C
T
VJ
= 125°C
T
VJ
= 25°C
IGBT T1 - T6
© 2010 IXYS All rights reserved 7 - 8
20101103c
MIXA20WB1200TML
IXYS reserves the right to change limits, test conditions and dimensions.
Diode D1 - D6
200 300 400 500 600 700
1
2
3
4
5
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
10
20
30
40
Qrr
[µC]
IF
[A]
VF [V] diF /dt [A/µs]
TVJ = 125°C
TVJ = 25°C
T
VJ
= 125°C
V
R
= 600 V
10 A
20 A
40 A
Fig. 7 Typ. Forward current versus VFFig. 8 Typ. reverse recov.charge Qrr vs. di/dt
200 300 400 500 600 700
0
5
10
15
20
25
30
35
IRR
[A]
diF /dt [A/µs]
T
VJ
= 125°C
V
R
= 600 V
10 A
20 A
40 A
Fig. 9 Typ. peak reverse current IRM vs. di/dt
200 300 400 500 600 700
0
100
200
300
400
500
600
700
trr
[ns]
diF /dt [A/µs]
10 A
20 A
40 A
T
VJ
= 125°C
V
R
= 600 V
Fig. 10 Typ. recovery time trr versus di/dt
Fig. 11 Typ. recovery energy Erec versus di/dt
200 300 400 500 600 700
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Erec
[mJ]
diF /dt [A/µs]
T
VJ
= 125°C
V
R
= 600 V
10 A
20 A
40 A
0.001 0.01 0.1 1 10
0.01
0.1
1
10
tp [s]
ZthJC
[K/W]
Fig. 12 Typ. transient thermal impedance
Diode
IGBT
IGBT FRD
RitiRiti
1 0.252 0.0015 0.461 0.0015
2 0.209 0.03 0.291 0.03
3 0.541 0.03 0.423 0.03
4 0.258 0.08 0.326 0.08
© 2010 IXYS All rights reserved 8 - 8
20101103c
MIXA20WB1200TML
IXYS reserves the right to change limits, test conditions and dimensions.
NTC
Fig. 13 Typ. thermistor resistance vs. temperature
0 25 50 75 100 125 150
10
100
1000
10000
100000
R
[Ω]
Typ. NTC resistance vs. temperature
TC [°C]
