Directed Energy, Inc. An DE475-102N21A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 30MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C; RGS = 1 M 1000 V VGS Continuous 20 V VGSM Transient 30 V ID25 Tc = 25C 21 A IDM Tc = 25C, pulse width limited by TJM 126 A IAR Tc = 25C 21 A EAR Tc = 25C 30 mJ 5 V/ns dv/dt IS IDM, di/dt 100A/s, VDD VDSS, Tj 150C, RG = 0.2 >200 V/ns 600 W 4.5 W -55...+150 C TJM 150 C Tstg -55...+150 C 300 C 3 g IS = 0 PDHS Tc = 25C Derate 4.4W/C above 25C PDAMB Tc = 25C TJ TL 1.6mm (0.063 in) from case for 10 s Weight Symbol Test Conditions Characteristic Values TJ = 25C unless otherwise specified min. VDSS VGS = 0 V, ID = 3 ma 1000 VGS(th) VDS = VGS, ID = 4 ma 2.5 IGSS VGS = 20 VDC, VDS = 0 IDSS VDS = 0.8 VDSS TJ = 25C TJ = 125C VGS = 0 RDS(on) VGS = 15 V, ID = 0.5ID25 Pulse test, t 300S, duty cycle d 2% gfs VDS = 15 V, ID = 0.5ID25, pulse test typ. max. V 5.5 V 100 nA 50 A 1 mA 0.52 22 S VDSS = 1000 V ID25 = 21 A RDS(on) = 0.52 PDHS = 600W DRAIN GATE SG1 SG2 SD1 SD2 Features * Isolated Substrate - high isolation voltage (>2500V) - excellent thermal transfer - Increased temperature and power * * - - * * * cycling capability IXYS advanced low Qg process Low gate charge and capacitances easier to drive faster switching Low RDS(on) Very low insertion inductance (<2nH) No beryllium oxide (BeO) or other hazardous materials Advantages * Optimized for RF and high speed switching at frequencies to 30MHz * Easy to mount--no insulators needed * High power density Directed Energy, Inc. An DE475-102N21A IXYS Company Symbol Test Conditions RF Power MOSFET Characteristic Values (TJ = 25C unless otherwise specified) min. RG Ciss Coss VGS = 0 V, VDS = 0.8 VDSS(max), f = 1 MHz Crss typ. 0.3 5500 pF 640 pF 190 pF 5 ns 5 ns 5 ns 8 ns 160 nC 35 nC 77 nC 0.20 K/W Td(on) Ton Td(off) VGS = 15 V, VDS = 0.8 VDSS ID = 0.5 IDM RG = 0.2 (External) Toff Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS ID = 0.5 ID25 Qgd RthJHS Source-Drain Diode Characteristic Values (TJ = 25C unless otherwise specified) Symbol Test Conditions IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle 2% min. Trr QRM max. IF = IS, -di/dt = 100A/s, VR = 100V typ. max. 21 A 126 A 1.5 V 200 ns 0.6 C 8 A IRM For detailed device mounting and installation instructions, see the "DESeries MOSFET Mounting Instructions" technical note on DEI's web site at www.directedenergy.com/apptech.htm Directed Energy, Inc. reserves the right to change limits, test conditions and dimensions. DEI MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,891,686 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 5,640,045 Directed Energy, Inc. An IXYS Company DE475-102N21A RF Power MOSFET 102N21A DE-SERIES SPICE Model (Preliminary) The DE-SERIES SPICE Model is illustrated in Figure 1. The model is an expansion of the SPICE level 3 MOSFET model. It includes the stray inductive terms LG, LS and LD. Rd is the RDS(ON) of the device, Rds is the resistive leakage term. The output capacitance, COSS, and reverse transfer capacitance, CRSS are modeled with reversed biased diodes. This provides a varactor type response necessary for a high power device model. The turn on delay and the turn off delay are adjusted via Ron and Roff. Figure 1 DE-SERIES SPICE Model This SPICE model may be downloaded as a text file from the DEI web site at www.directedenergy.com/spice.htm Net List: .SUBCKT 102N21A 10 20 30 * TERMINALS: D G S * 1000 Volt 21 Amp 0.52 ohm N-Channel Power MOSFET * REV.A 01-09-02 M1 1 2 3 3 DMOS L=1U W=1U RON 5 6 0.3 DON 6 2 D1 ROF 5 7 .1 DOF 2 7 D1 D1CRS 2 8 D2 D2CRS 1 8 D2 CGS 2 3 5.5N RD 4 1 0.5 DCOS 3 1 D3 RDS 1 3 5.0MEG LS 3 30 .5N LD 10 4 1N LG 20 5 1N .MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=3.8) .MODEL D1 D (IS=.5F CJO=1P BV=100 M=.5 VJ=.6 TT=1N) .MODEL D2 D (IS=.5F CJO=400P BV=1000 M=.4 VJ=.6 TT=400N RS=10M) .MODEL D3 D (IS=.5F CJO=900P BV=1000 M=.3 VJ=.4 TT=400N RS=10M) .ENDS Doc #9200-0247 Rev 1 (c) 2002 Directed Energy, Inc. Directed Energy, Inc. An IXYS Company 2401 Research Blvd., Suite 108 Fort Collins, CO USA 80526 970-493-1901 Fax: 970-493-1903 Email: deiinfo@directedenergy.com Web: http://www.directedenergy.com