Directed En ergy, Inc.
An
IXYS
Company
DE475-102N21A
RF Power MOSFET
Preliminary Data Sheet
VDSS = 1000 V
ID25 = 21 A
RDS(on) = 0.52 Ω
ΩΩ
Ω
PDHS = 600W
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 150°C 1000 V
V
DGR
T
J
= 25°C to 150°C; R
GS
= 1 MΩ 1000 V
V
GS
Continuous ±20 V
V
GSM
Transient ±30 V
I
D25
T
c
= 25°C 21 A
I
DM
T
c
= 25°C, pulse width limited by T
JM
126 A
I
AR
T
c
= 25°C 21 A
E
AR
T
c
= 25°C 30 mJ
I
S
≤ I
DM
, di/dt ≤ 100A/µs, V
DD
≤ V
DSS
,
T
j
≤ 150°C, R
G
= 0.2Ω
5 V/ns
I
S
= 0 >200 V/ns
P
DHS
T
c
= 25°C
Derate 4.4W/°C above 25°C 600 W
P
DAMB
T
c
= 25°C 4.5 W
T
J
-55…+150 °C
T
JM
150 °C
T
stg
-55…+150 °C
T
L
1.6mm (0.063 in) from case for 10 s 300 °C
Weight 3 g
dv/dt
Symbol Test Conditions Chara ct eri stic Valu e s
T
J
= 25°C unless otherwise specified
min. typ. max.
V
DSS
V
GS
= 0 V, I
D
= 3 ma 1000 V
V
GS(th)
V
DS
= V
GS
, I
D
= 4 ma 2.5 5.5 V
I
GSS
V
GS
= ±20 V
DC
, V
DS
= 0 ±100 nA
I
DSS
V
DS
= 0.8 V
DSS
T
J
= 25°C
V
GS
= 0 T
J
= 125°C
50
1 µA
mA
R
DS(on)
0.52
Ω
g
fs
V
DS
= 15 V, I
D
= 0.5I
D25
, pulse test 22 S
V
GS
= 15 V, I
D
= 0.5I
D25
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
Features
•Isolated Substrate
−high isolation voltage (>2500V)
−excellent thermal transfer
−Increased temperature and power
cycling capability
•IXYS advanced low Q
g
process
•Low gate charge and capacitances
−easier to drive
−faster switching
•Low R
DS(on)
•Very low insertion inductance (<2nH)
•No beryllium oxide (BeO) or other haz-
ardous materials
A dvantages
•Optimized for RF and high speed
switching at frequencies to 30MHz
•Easy to mount—no insulators needed
•High power density
♦
N-Channel Enhancement Mode
♦
Low Q
g
and R
g
♦
High dv/dt
♦
Nanosecond Switching
♦
30MHz Maximum Frequency
DRAIN
SG1 SG2
GATE
SD1 SD2
Directed En ergy, Inc.
An
IXYS
Company
DE475-102N21A
RF Power MOSFET
Symbol Test Conditions Characteri stic Valu e s
(T
J
= 25°C unless otherwise specified)
min. typ. max.
R
G
0.3 Ω
C
iss
5500 pF
C
oss
V
GS
= 0 V, V
DS
= 0.8 V
DSS(max)
,
f = 1 MHz 640 pF
C
rss
190 pF
T
d(on)
5 ns
T
on
V
GS
= 15 V, V
DS
= 0.8 V
DSS
I
D
= 0.5 I
DM
R
G
= 0.2 Ω (External)
5 ns
T
d(off)
5 ns
T
off
8 ns
Q
g(on)
160 nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
I
D
= 0.5 I
D25
35 nC
Q
gd
77 nC
R
thJHS
0.20 K/W
Source-Drain Diode Charact eri stic Valu e s
(T
J
= 25°C unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
V
GS
= 0 V 21 A
I
SM
Repetitive; pulse width limited by T
JM
126 A
V
SD
1.5 V
T
rr
200 ns
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2%
Q
RM
I
F
= I
S
, -di/dt = 100A/µs,
V
R
= 100V
0.6
µC
I
RM
8 A
Directed Energy, Inc. reserves the right to change limits, test conditions and dimensions.
DEI MOSFETS are covered by one or more of the following U.S. patents:
4,835,592 4,850,072 4,881,106 4,891,686 4,931,844 5,017,508
5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715
5,381,025 5,640,045
For detailed device mounting and installation instructions, see the “DE-
Series MOSF ET Mount in g Ins tr uct ions ” technical note on DEI’s web site at
www.directedenergy.com/apptech.htm
Directed En ergy, Inc.
An
IXYS
Company
DE475-102N21A
RF Power MOSFET
Directed Energy, Inc.
An IXYS Company
2401 Research Blvd., Suite 108
Fort Collins, CO USA 80526
970-493-1901 Fax: 970-493-1903
Email: deiinfo@directedenergy.com
Web: http://www.directedenergy.com
102N21A DE-SERIES SPICE Model
(Preliminary)
The DE-SERIES SPICE Model is illustrated in Figure 1. The model is an expan-
sion of the SPICE level 3 MOSFET model. It includes the stray inductive terms
L
G
, L
S
and L
D
. Rd is the R
DS(ON)
of the device, Rds is the resistive leakage term.
The output capacitance, C
OSS
, and reverse transfer capacitance, C
RSS
are mod-
eled with reversed biased diodes. This provides a varactor type response neces-
sary for a high power device model. The turn on delay and the turn off delay are
adjusted via Ron and Roff.
Figure 1 DE-SERIES SPICE Model
This SPICE model may be downloaded as a text file from the DEI web site at
www.directedenergy.com/spice.htm
Net List:
.SUBCKT 102N21A 10 20 30
* TERMINALS: D G S
* 1000 Volt 21 Amp 0.52 ohm N-Channel Power MOSFET
* REV.A 01-09-02
M1 1 2 3 3 DMOS L=1U W=1U
RON 5 6 0.3
DON 6 2 D1
ROF 5 7 .1
DOF 2 7 D1
D1CRS 2 8 D2
D2CRS 1 8 D2
CGS 2 3 5.5N
RD 4 1 0.5
DCOS 3 1 D3
RDS 1 3 5.0MEG
LS 3 30 .5N
LD 10 4 1N
LG 20 5 1N
.MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=3.8)
.MODEL D1 D (IS=.5F CJO=1P BV=100 M=.5 VJ=.6 TT=1N)
.MODEL D2 D (IS=.5F CJO=400P BV=1000 M=.4 VJ=.6 TT=400N RS=10M)
.MODEL D3 D (IS=.5F CJO=900P BV=1000 M=.3 VJ=.4 TT=400N RS=10M)
.ENDS
Doc #9200-0247 Rev 1
© 2002 Directed Energy, Inc.
