Semiconductor Components Industries, LLC, 2002
June, 2002 – Rev. 10 1Publication Order Number:
MJ15003/D
MJ15003 (NPN),
MJ15004 (PNP)
Preferred Device
Complementary Silicon
Power Transistors
The MJ15003 and MJ15004 are PowerBase power transistors
designed for high power audio, disk head positioners and other linear
applications.
•High Safe Operating Area (100% Tested) –
5.0 A @ 50 V
•For Low Distortion Complementary Designs
•High DC Current Gain –
hFE = 25 (Min) @ IC = 5 Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Rating
ÎÎÎÎ
ÎÎÎÎ
Symbol
ÎÎÎÎ
ÎÎÎÎ
Value
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Voltage
ÎÎÎÎ
ÎÎÎÎ
VCEO
ÎÎÎÎ
ÎÎÎÎ
140
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Base Voltage
ÎÎÎÎ
ÎÎÎÎ
VCBO
ÎÎÎÎ
ÎÎÎÎ
140
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter–Base Voltage
ÎÎÎÎ
ÎÎÎÎ
VEBO
ÎÎÎÎ
ÎÎÎÎ
5
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Current – Continuous
ÎÎÎÎ
ÎÎÎÎ
IC
ÎÎÎÎ
ÎÎÎÎ
20
ÎÎÎ
ÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Base Current – Continuous
ÎÎÎÎ
ÎÎÎÎ
IB
ÎÎÎÎ
ÎÎÎÎ
5
ÎÎÎ
ÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Current – Continuous
ÎÎÎÎ
ÎÎÎÎ
IE
ÎÎÎÎ
ÎÎÎÎ
25
ÎÎÎ
ÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Total Power Dissipation @ TC = 25°C
Derate above 25°C
ÎÎÎÎ
ÎÎÎÎ
PD
ÎÎÎÎ
ÎÎÎÎ
250
1.43
ÎÎÎ
ÎÎÎ
Watts
W/°C
ÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎ
Operating and Storage Junction
Temperature Range
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
TJ, Tstg
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
–65 to +200
ÎÎÎ
Î
Î
Î
ÎÎÎ
°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎ
ÎÎÎÎ
Symbol
ÎÎÎÎ
ÎÎÎÎ
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction–to–Case
ÎÎÎÎ
ÎÎÎÎ
RJC
ÎÎÎÎ
ÎÎÎÎ
0.70
ÎÎÎ
ÎÎÎ
°C/W
ÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎ
Maximum Lead Temperature for Soldering
Purposes:
1/16″ from Case for 10 seconds
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
TL
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
265
ÎÎÎ
Î
Î
Î
ÎÎÎ
°C
http://onsemi.com
Preferred devices are recommended choices for future use
and best overall value.
Device Package Shipping
ORDERING INFORMATION
MJ15003 TO–204AA (TO–3) 100 Foams
MJ15004 TO–204AA (TO–3)
TO–204AA (TO–3)
CASE 1–07
100 Foams
20 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
140 V 250 W
MARKING
DIAGRAM
xx = Specific Device Code
A = Assembly Location
WL, L = Wafer Lot
YY, Y = Year
WW, W = Work Week
xxxxx
YYWW
MJ15003 (NPN), MJ15004 (PNP)
http://onsemi.com
2
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
*ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎ
ÎÎÎÎ
Symbol
Min
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Emitter Sustaining Voltage (Note 1)
(IC = 200 mAdc, IB = 0)
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
VCEO(sus)
ÎÎ
140
Î
–
ÎÎÎ
Î
Î
Î
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCE = 140 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 140 Vdc, VBE(off) = 1.5 Vdc, TC = 150°C)
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
ICEX
ÎÎ
–
–
Î
100
2
ÎÎÎ
Î
Î
Î
ÎÎÎ
Adc
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCE = 140 Vdc, IB = 0)
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
ICEO
ÎÎ
–
Î
250
ÎÎÎ
Î
Î
Î
ÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current
(VEB = 5 Vdc, IC = 0)
ÎÎÎÎ
ÎÎÎÎ
IEBO
–
100
ÎÎÎ
ÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
SECOND BREAKDOWN
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Second Breakdown Collector Current with Base Forward Baised
(VCE = 50 Vdc, t = 1 s (non repetitive))
(VCE = 100 Vdc, t = 1 s (non repetitive))
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
IS/b
ÎÎ
ÎÎ
5.0
1.0
Î
Î
–
–
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain
(IC = 5 Adc, VCE = 2 Vdc)
ÎÎÎÎ
ÎÎÎÎ
hFE
25
150
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Emitter Saturation Voltage
(IC = 5 Adc, IB = 0.5 Adc)
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
VCE(sat)
ÎÎ
–
Î
1.0
ÎÎÎ
Î
Î
Î
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base Emitter On Voltage
(IC = 5 Adc, VCE = 2 Vdc)
ÎÎÎÎ
ÎÎÎÎ
VBE(on)
–
2.0
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Current Gain — Bandwidth Product
(IC = 0.5 Adc, VCE = 10 Vdc, ftest = 0.5 MHz)
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
fT
ÎÎ
2.0
Î
–
ÎÎÎ
Î
Î
Î
ÎÎÎ
MHz
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
cob
ÎÎ
–
Î
1000
ÎÎÎ
Î
Î
Î
ÎÎÎ
pF
1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2%.
IC, COLLECTOR CURRENT (AMP)
5
Figure 1. Active–Region Safe Operating Area
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
5 7 10 200
10
2
2 3 50 70 10020 30
7
20
1
3
0.5
0.2
0.7
0.3
TC = 25°C
15
150
TJ = 200°C
BONDING WIRE LIMITED
THERMAL LIMITATION (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED VCEO
There are two limitations on the powerhandling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 1 is based on TJ(pk) = 200°C; TC is
variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power that
can be handled to values less than the limitations imposed by
second breakdown.
MJ15003 (NPN), MJ15004 (PNP)
http://onsemi.com
3
PACKAGE DIMENSIONS
CASE 1–07
TO–204AA (TO–3)
ISSUE Z
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY.
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A1.550 REF 39.37 REF
B--- 1.050 --- 26.67
C0.250 0.335 6.35 8.51
D0.038 0.043 0.97 1.09
E0.055 0.070 1.40 1.77
G0.430 BSC 10.92 BSC
H0.215 BSC 5.46 BSC
K0.440 0.480 11.18 12.19
L0.665 BSC 16.89 BSC
N--- 0.830 --- 21.08
Q0.151 0.165 3.84 4.19
U1.187 BSC 30.15 BSC
V0.131 0.188 3.33 4.77
A
N
E
C
K
–T– SEATING
PLANE
2 PL
D
M
Q
M
0.13 (0.005) Y M
T
M
Y
M
0.13 (0.005) T
–Q–
–Y–
2
1
UL
GB
V
H
MJ15003 (NPN), MJ15004 (PNP)
http://onsemi.com
4
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MJ15003/D
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