TLP421
2002-09-25
1
TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
TLP421
Office Equipment
Household Appliances
Solid State Relays
Switching Power Supplies
Various Controllers
Signal Transmission Between Different Voltage Circuits
The TOSHIBA TLP421 consists of a silicone photo−transistor optically
coupled to a gallium arsenide infrared emitting diode in a four lead
plastic DIP (DIP4) with having high isolation voltage
(AC: 5kVRMS (min)).
· Collector-emitter voltage: 80V (min.)
· Current transfer ratio: 50% (min.)
Rank GB: 100% (min.)
· Isolation voltage: 5000Vrms (min.)
· UL recognized: UL1577
· BSI approved: BS EN60065: 1994
Approved no.8411
BS EN60950: 1992
Approved no.8412
· SEMKO approved: EN60065, EN60950, EN60335
Approved no.9910249/01
Pin Configurations
(top view)
1
23
4
1 : Anode
2 : Cathode
3 : Emitter
4 : Collector
Unit in mm
TOSHIBA 11−5B2
Weight: 0.26 g
TLP421
2002-09-25
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· Option(D4)type
TÜV approved: DIN VDE0884
Approved no.R9950202
Maximum operating insulation voltage: 890VPK
Maximu permissible overvoltage: 8000VPK
(Note): When a VDE0884 approved type is needed,
please designate the “Option(D4)”
Making the VDE applocation: DIN VDE0884
· Construction mechanical rating
7.62mm Pich
Typical Type
10.16mm Pich
TLPxxxF Type
Creepage distance 7.0mm(min) 8.0mm(min)
Clearance 7.0mm(min) 8.0mm(min)
Insulation thickness 0.4mm(min) 0.4mm(min)
Current Transfer Ratio
Current Transfer Ratio (%)
(IC / IF)
IF = 5mA, VCE = 5V, Ta = 25°C
Type
Classi-
fication
(*1) Min Max
Marking Of Classification
(None) 50 600 Blank, Y, Y+, G, G+, B, B+, GB
Rank Y 50 150 Y, Y+
Rank GR 100 300 G, G+
Rank BL 200 600 B, B+
TLP421
Rank GB 100 600 G, G+, B, B+, GB
(*1): Ex. rank GB: TLP421 (GB)
(Note): Application type name for certification test, please use standard product type name, i. e.
TLP421 (GB): TLP421
TLP421
2002-09-25
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Maximum Ratings (Ta = 25°C)
Characteristic Stmbol Rating Unit
Forward current IF 60 mA
Forward current derating(Ta ≥ 39°C) ∆IF / °C -0.7 mA / °C
Pulse forward current (Note 2) IFP 1 A
Power dissipation PD 100 mW
Power dissipation derating ∆PD / °C -1.0 mW / °C
Reverse voltage VR 5 V
LED
Junction temperature Tj 125 °C
Collector-emitter voltage VCEO 80 V
Emitter-collector voltage VECO 7 V
Collector current IC 50 mA
Power dissipation(single circuit) PC 150 mW
Power dissipation derating
(Ta ≥ 25°C)(single circuit) ∆PC / °C -1.5 mW / °C
Detector
Junction temperature Tj 125 °C
Operating temperature range Topr -55~100 °C
Storage temperature range Tstg -55~125 °C
Lead soldering temperature (10s) Tsol 260 °C
Total package power dissipation PT 250 mW
Total package power dissipation derating
(Ta ≥ 25°C) ∆PT / °C -2.5 mW / °C
Isolation voltage (Note 3) BVS 5000
Vrms
(Note 2): 100µs pulse, 100Hz frequency
(Note 3): AC, 1 min., R.H.≤ 60%. Apply voltage to LED pin and detector pin together.
Recommended Operating Conditions
Characteristic Symbol Min Typ. Max Unit
Supply voltage VCC ― 5 24 V
Forward current IF ― 16 25 mA
Collector current IC ― 1 10 mA
Operating temperature Topr -25 ― 85 °C
TLP421
2002-09-25
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Individual Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Forward voltage VF I
F = 10 mA 1.0 1.2 1.3 V
Reverse current IR V
R = 5 V ― ― 10 µA
LED
Capacitance CT V = 0, f = 1 MHz ― 30 ― pF
Collector-emitter
breakdown voltage V(BR) CEO IC = 0.5 mA 80 ― ― V
Emitter-collector
breakdown voltage V(BR) ECO IE = 0.1 mA 7 ― ― V
VCE = 24 V (ambient light
below 1000 ℓx) ― 0.01
(0.1)
0.1
(10) µA
Collector dark current ID(ICEO)
VCE = 24 V (ambient light
Ta = 85°C below 1000 ℓx) ― 0.6
(1)
50
(50) µA
Detector
Capacitance
(collector to emitter) CCE V = 0, f = 1 MHz ― 10 ― pF
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition MIn Typ. Max Unit
50 ― 600
Current transfer ratio IC / IF IF = 5 mA, VCE = 5 V
Rank GB 100 ― 600
%
― 60 ―
Saturated CTR IC / IF (sat) IF = 1 mA, VCE = 0.4 V
Rank GB 30 ― ―
%
IC = 2.4 mA, IF = 8 mA ― ― 0.4
― 0.2 ―
Collector-emitter saturation
voltage VCE (sat) IC = 0.2 mA, IF = 1 mA
Rank GB ― ― 0.4
V
Isolation Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Capacitance
(input to output) CS VS = 0, f = 1 MHz ― 0.8 ― pF
Isolation resistance RS VS = 500 V 1×1012 1014 ― Ω
AC, 1 minute 5000 ― ―
AC, 1 second, in oil ― 10000 ―
Vrms
Isolation voltage BVS
DC, 1 minute, in oil ― 10000 ― Vdc
TLP421
2002-09-25
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Switching Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Rise time tr ― 2 ―
Fall time tf ― 3 ―
Turn-on time ton ― 3 ―
Turn-off time toff
VCC = 10 V, IC = 2 mA
RL = 100Ω
― 3 ―
µs
Turn-on time tON ― 2 ―
Storage time ts ― 25 ―
Turn-off time tOFF
RL = 1.9 kΩ (Fig.1)
VCC = 5 V, IF = 16 mA
― 50 ―
µs
Fig.1 Switching time test circuit
IF
VCE
VCC
tON
4.5V
0.5V
tOFF
t
s
VCC
VCE
IF
RL
TLP421
2002-09-25
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120
IF – Ta
Allowable forward current
I
F (mA)
Ambient temperature Ta (℃)
100
100
80
80 60
20 40 0 -20
0
60
40
20
120
PC – Ta
Allowable collector power
dissipation PC (mW)
Ambient temperature Ta (℃)
200
100
160
80 60
20 40 0 -20
0
120
80
40
Forword voltage temperature
coefficent ∆VF / ∆Ta ( m V / ℃)
IFP – DR
Pulse forward current IFP (mA)
Duty cycle ratio DR
3000
0.01
0.001
10
1000
100
0.1 1
IF – VF
Forward current IF (mA)
Forward voltage VF (V)
100
0.4
1
10
0.1
0.6 0.8 1.0
1.2 1.4 1.6
0.1
-2.2
-2.6
-3.0
-0.6
-1.8
-1.4
-1.0
1 10
∆VF / ∆Ta
–
I
F
Forward current I
F
(
mA
)
100
IFP – VFP
Pulse forward current IFP (mA)
Pulse forward voltage VFP (V)
1000
0
10
100
1
0.4 0.8 1.2 1.6 2.0 2.4
Pulse width ≤ 10µs
Repetitive
frequency=100Hz
Ta = 25℃
TLP421
2002-09-25
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30
1.0 0.8 0.4 0.6 0.2
20
10
0
0 1.2
50 10
Collector-emitter voltage VCE (V)
Collector current IC (mA)
20
5
IF= 2 m
A
30
IC – VCE
40
50
10
Collector-emitter voltage VCE (V)
Collector current IC (mA)
IC – VCE
80
10 8
4 6
0 2
60
40
20
0
20 15
IF=5mA
30
IC – IF
Collector current IC (mA)
Forward current IF (mA)
100
10
0.1
1
0.1 1 10 100
Sam
p
le
A
Sample B
0.01
Ta = 25°C
VCE = 5V
VCE = 0.4V
IC /IF – IF
Current transfer ratio IC / IF (%)
Forward current IF (mA)
1000
100
3
10
0.1 1 10 100
Sam
p
le
A
Sample B
Ta = 25°C
VCE = 5V
VCE = 0.4V
ID – Ta
Ambient tem
p
erature Ta
(
℃
)
10
1
0.1
80
60
40
20 0
001
0.001
0.0001
10
VCE=24 V
Collector dark current IC (µA)
5
100
TLP421
2002-09-25
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Ambient temperature Ta (℃)
Collector current IC (mA)
IC – Ta
80
60
20 40 0 -20
0.1
100
10
100
1
1
5
10
25
IF = 0.5 mA
VCE = 5V
IF = 5 mA
IC = 1 mA
Ambient temperature Ta (℃)
Collector-emitter saturation
voltage VCE(sat) (V)
VCE(sat) – Ta
100
80
60
20 40
0
-20
0.20
0.16
0.12
0.08
0.04
0
Switching Time – RL
Switching time (µs)
Load resistance RL (kΩ)
1000
100
10
1
10
tON
100
1
Ta = 25°C
IF = 16mA
VCC = 5V
t
O
FF
tS
TLP421
2002-09-25
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· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes
are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the
products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with
domestic garbage.
· The products described in this document are subject to the foreign exchange and foreign trade laws.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
000707EBC
RESTRICTIONS O N PRODUCT USE
