BD241BFP
BD242BFP
COMPLEMENTARY SILICON POWER TRANSISTORS
■SGS-THOMSONPREFERRED SALESTYPES
■COMPLEMENTARYPNP - NPNDEVICES
■FULLY MOLDED ISOLATED PACKAGE
■2000V DC ISOLATION(U.L. COMPLIANT)
APPLICATIONS
■GENERALPURPOSESWITCHING
■GENERALPURPOSEAMPLIFIERS
DESCRIPTION
The BD241BFP is silicon epitaxial-base NPN
transistors mounted in TO-220FP fully molded
isolated package.
It is inteded for power linear and switching
applications.
The complementaryPNP typesis the BD242BFP.
INTERNAL SCHEMATIC DIAGRAM
April 1998
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN BD241BFP
PNP BD242BFP
VCER Collector-Base Voltage (RBE =100Ω)90V
V
CEO Collector-Emitter Voltage (IB=0) 80 V
V
EBO Emitter-Base Voltage (IC=0) 5 V
I
CCollector Current 3 A
ICM Collector Peak Current 5 A
IBBase Current 1 A
Ptot Total Dissipation at Tc≤25 oC24W
T
stg Storage Temperature -65 to 150 oC
TjMax. Operating Junction Temperature 150 oC
For PNP types voltage and current values are negative.
123
TO-220FP
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THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 5.3 oC/W
ELECTRICAL CHARACTERISTICS (Tcase =25oC unlessotherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICEO Collector Cut-off
Current (IB=0) V
CE =60V 0.3 mA
I
CES Collector Cut-off
Current (VBE =0) V
CE =80V 0.2 mA
I
EBO Emitter Cut-off Current
(IC=0) V
EB =5V 1 mA
V
CEO(sus)∗Collector-Emitter
Sustaining Voltage
(IB=0)
I
C=30mA 80 V
V
CE(sat)∗Collector-Emitter
Saturation Voltage IC=3A I
B= 0.6 A 1.2 V
VBE(ON)∗Base-Emitter Voltage IC=3A V
CE =4V 1.8 V
h
FE* DC Current Gain IC=1A V
CE =4V
I
C=3A V
CE =4V 25
10
∗
Pulsed: Pulse duration = 300 µs, duty cycle ≤2%
For PNP types voltage and current valuesare negative.
BD241BFP / BD242BFP
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
L2
A
B
D
E
H
G
L6
¯
F
L3
G1
123
F2
F1
L7
L4
TO-220FP MECHANICAL DATA
BD241BFP / BD242BFP
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Information furnished is believed tobe accurate and reliable.However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use ofsuch information nor for any infringement of patents or other rightsof third parties which may resultsfrom itsuse. No
license isgranted by implication or otherwise under any patent orpatent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in thispublication are subjectto change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproducts are not authorized foruse as criticalcomponents in life support devices orsystems without express
written approval ofSGS-THOMSON Microelectonics.
1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
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BD241BFP / BD242BFP
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