MMDT4401
DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
Epitaxial Planar Die Construction
Ideal for Low Power Amplification and Switching
Ultra-Small Surface Mount Package
Qualified to AEC-Q101 Standards for High Reliability
Lead Free/RoHS Compliant (Note 3)
"Green" Device (Note 4 and 5)
Mechanical Data
Case: SOT-363
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Terminal Connections: See Diagram
Marking Information: K2X – See Page 4
Ordering & Date Code Information: See Page 4
Weight: 0.006 grams (approximate)
SOT-363
Dim Min Max
A 0.10 0.30
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
F 0.30 0.40
H 1.80 2.20
J 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.25
α
All Dimensi ns in mm o
A
BC
JD
H
K
F
M
L
C
2
B
1
E
1
E
2
E
2
B
2
B
2
C
1
C
1
C
2
B
1
E
1
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 6.0 V
Collector Current - Continuous (Note 1) IC 600 mA
Power Dissipation (Note 1, 2) Pd 200 mW
Thermal Resistance, Junction to Ambient (Note 1) RθJA 625 °C/W
Operating and Storage Temperature Range Tj, TSTG -55 to +150 °C
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Maximum combined dissipation.
3. No purposefully added lead.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30111 Rev. 13 - 2
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Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage V(BR)CBO 60 V IC = 100μA, IE = 0
Collector-Emitter Breakdown Voltage V(BR)CEO 40 V IC = 1.0mA, IB = 0
Emitter-Base Breakdown Voltage V(BR)EBO 6.0 V IE = 100μA, IC = 0
Collector Cutoff Current ICEX 100 nA VCE = 35V, VEB(OFF) = 0.4V
Base Cutoff Current IBL 100 nA VCE = 35V, VEB(OFF) = 0.4V
ON CHARACTERISTICS (Note 6)
DC Current Gain hFE
20
40
80
100
40
300
IC = 100µA, VCE = 1.0V
IC = 1.0mA, VCE = 1.0V
IC = 10mA, VCE = 1.0V
IC = 150mA, VCE = 1.0V
IC = 500mA, VCE = 2.0V
Collector-Emitter Saturation Voltage VCE(SAT) 0.40
0.75 V IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
Base-Emitter Saturation Voltage VBE(SAT)
0.75
0.95
1.2 V IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Ccb 6.5 pF VCB = 5.0V, f = 1.0MHz, IE = 0
Input Capacitance Ceb 30 pF VEB = 0.5V, f = 1.0MHz, IC = 0
Input Impedance hie 1.0 15 kΩ
Voltage Feedback Ratio hre 0.1 8.0 x 10-4
Small Signal Current Gain hfe 40 500
Output Admittance hoe 1.0 30 μS
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
Current Gain-Bandwidth Product fT 250 MHz VCE = 10V, IC = 20mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Delay Time td 15 ns
Rise Time tr 20 ns
VCC = 30V, IC = 150mA,
VBE(off) = 2.0V, IB1 = 15mA
Storage Time ts 225 ns
Fall Time tf 30 ns
VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA
Notes: 6. Short duration pulse test used to minimize self-heating effect.
1
10
1,000
100
0.1 110 1,000
100
h, D
C
C
U
R
R
ENT G
A
IN
FE
I , COLLECTOR CURRENT (mA)
Fig. 2 Typical DC Current Gain vs. Collector Current
C
T = -25°C
A
T = +25°C
A
T = 125°C
A
V = 1.0V
CE
0
50
100
25 50 75 100 125 150 175 200
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Max Power Dissipation vs. Ambient Temperature
A
150
200
250
300
0
Note 1
DS30111 Rev. 13 - 2
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0.001 0.01 110
0.1 100
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
I , BASE CURRENT (mA)
Fig. 4 Typical Collector Saturation Region
B
V,
C
O
LLE
C
T
O
R
-E
M
I
T
T
E
R
V
O
L
T
A
G
E (V)
CE
1.0
5.0
20
10
30
0.1 101.0 50
C
A
P
A
C
I
T
A
N
C
E (p
F
)
REVERSE VOLTS (V)
Fig. 3 Typical Capacitance
C
obo
f = 1MHz
10.1 10 100
V , BASE EMI
T
T
E
R
V
O
L
T
A
G
E (V)
BE(ON)
I , COLLECTOR CURRENT (mA)
Fig. 6 Base Emitter Voltage vs. Collector Current
C
0.2
0.3
0.4
0.6
0.5
0.8
0.7
1.0
0.9
V = 5V
CE
T = 25°C
A
T = -50°C
A
T = 150°C
A
110
100 1000
V,
C
O
LLE
C
T
O
R
T
O
EMI
T
T
E
R
SATURATION VOLTAGE (V)
CE(SAT)
I , COLLECTOR CURRENT (mA)
Fig. 5 Collector Emitter Saturation Voltage
vs. Collector Current
C
T = 25°C
A
T = -50°C
A
T = 150°C
A
0
0.1
0.2
0.3
0.4
0.
5
I
I
C
B
= 10
1
10
100
1,000
110
I , COLLECTOR CURRENT (mA)
Fig. 7 Gain Bandwidth Product vs. Collector Current
C
f,
100
G
AI
N
BA
N
DWID
T
H
P
R
O
D
U
C
T
(M
H
z)
T
DS30111 Rev. 13 - 2
3 of 4
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MMDT4401
© Diodes Incorporated
Ordering Information (Note 7)
DS30111 Rev. 13 - 2
4 of 4
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MMDT4401
© Diodes Incorporated
Device Packaging Shipping
MMDT4401-7-F SOT-363 3000/Tape & Reel
Notes: 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K2X YM
K2X YM
K2X = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
Date Code Key
Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012
Code J K L M N P R S T U V W X Y Z
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.