IGBT MODU ODULE MBM200JS12AW Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEAT RES EATURES 4-6.5 * High speed and low saturation voltage. 3-M6 108 93 18 20 4-Fast-on Terminal #110 20 C2E1 G2 * low noise due to built-in free-wheeling 15 27 48 62 E2 diode - ultra soft fast recovery diode(USFD). E1 E2 * Isolated head sink (terminal to base). 25 G1 C1 25 36 29 6.5 0.8 7 12 46 G2 E2 C2E1 E2 C1 Weight: 470 (g) TERMINALS E1 G1 ABSOLUTE MAXIMUM RATINGS (Tc=25C ) Item Collector Emitter Voltage Gate Emitter Voltage Collector Current Forward Current DC 1ms DC 1ms Collector Power Dissipation Junction Temperature Storage Temperature Isolation Voltage Screw Torque Terminals Mounting Symbol Unit VCES VGES IC ICp IF IFM Pc Tj Tstg VISO - V V MBM200JS12AW 1,200 20 200 400 200 (1) 400 1,470 -40 ~ +150 -40 ~ +125 2,500(AC 1 minute) 2.94(30) (2) 2.94(30) (3) A A W C C VRMS N.m (kgf.cm) Notes:(1)RMS Current of Diode 60Arms max. (2)(3)Recommended Value 2.45N.m(25kgf.cm) CHARACTERISTICS Item (Tc=25C ) Symbol Unit Min. Typ. Max. Test Conditions Collector Emitter Cut-Off Current I CES mA 1.0 VCE=1,200V,VGE=0V Gate Emitter Leakage Current IGES nA 500 VGE=20V,VCE=0V Collector Emitter Saturation Voltage VCE(sat) V 2.7 3.4 IC=200A,VGE=15V Gate Emitter Threshold Voltage VGE(TO) V 10 VCE=5V, IC =200mA Input Capacitance Cies pF 21,000 VCE=10V,VGE=0V,f=1MHz Rise Time tr 0.2 0.35 VCC=600V ms Turn On Time ton 0.35 0.55 RL=3.0W Switching Times Fall Time tf 0.25 0.35 RG=6.2W (4) 0.55 1.0 VGE=15V Turn Off Time toff Peak Forward Voltage Drop VFM V 2.5 3.5 IF=200A,VGE=0V Reverse Recovery Time trr 0.35 IF=200A,VGE=-10V, di/dt=300A/ms ms Junction to case Rth(j-c) C/W 0.085 Thermal Impedance IGBT 0.22 FWD Rth(j-c) Notes:(4) RG value is the test condition's value for decision of the switching times, not recommended value. Determine the suitable RG value after the measurement of switching waveforms (overshoot voltage,etc.)with appliance mounted. http://store.iiic.cc/ PDE-M200JS12AW-0 14V VGE=15V 13V12V 400 14V VGE=15V 13V12V TYPICAL Tc=25C Tc=125C 300 11V Pc=1470W 200 10V 100 Collector Current, Ic (A) Collector Current, Ic (A) TYPICAL 400 11V 300 200 10V 100 9V 9V 0 0 2 4 6 8 0 10 Collector to Emitter Voltage, VCE (V) Collector current vs. Collector to Emitter voltage 8 6 4 2 0 Collector to Emitter Voltage, VCE (V) Collector current vs. Collector to Emitter voltage TYPICAL TYPICAL 10 10 Tc=125C Collector to Emitter Voltage, VCE (V) Collector to Emitter Voltage, VCE (V) Tc=25C 8 6 4 Ic=400A Ic=200A 2 8 6 4 15 10 5 0 Ic=400A Ic=200A 2 0 0 20 0 TYPICAL 15 20 VGE=0 Tc=25C Tc=125C Vcc=600V Ic =200A Tc=25C Forward Current, IF (A) 10 10 TYPICAL 400 20 15 5 Gate to Emitter Voltage, VGE (V) Collector to Emitter voltage vs. Gate to Emitter voltage Gate to Emitter Voltage, VGE (V) Collector to Emitter voltage vs. Gate to Emitter voltage Gate to Emitter Voltage, VGE (V) 10 300 200 100 5 0 0 0 500 1000 1500 0 1 2 3 4 5 Forward Voltage, VF (V) Forward voltage of free-wheeling diode Gate Charge, QG (nc) Gate charge characteristics PDE-M200JS12AW-0 http://store.iiic.cc/ TYPICAL 1.5 TYPICAL 10 VCC=600V VGE=15V IC=200A TC=25C Resistive Load Vcc=600V VGE=15V RG=6.2W TC=25C Resistive Load Switching Time, t (ms) 1 1 toff toff 0.5 tr ton ton tf tf tr 0 0.1 0 50 100 150 200 1 250 10 Collector Current, IC (A) Switching time vs. Collector current 100 Gate Resistance, RG (W) Switching time vs. Gate resistance TYPICAL 40 Vcc=600V VGE=15V RG=6.2W TC=125C Inductive Load 30 Etoff Switching Loss, Eton, Etoff (mJ/pulse) Switching Loss, Eton,Etoff, Err (mJ/pulse) 100 TYPICAL 20 Eton 10 Err VCC=600V VGE=15V IC =200A TC=125C Inductive Load 0 50 100 150 200 Err 250 1 Transient Thermal Impedance, Rth(j-c) (C/W) Collector Current, Ic (A) 1000 VGE=15V RG=6.2W TC125C 10 1 0.1 0 200 400 600 800 1000 1200 100 10 Gate Resistance, RG (W) Switching loss vs. Gate resistance Collector Current, IC (A) Switching loss vs. Collector current 100 Eton 10 1 0 Etoff 1400 1 Diode IGBT 0.1 0.01 0.001 0.001 Collector to Emitter Voltage, VCE (V) Reverse biased safe operating area 0.01 0.1 1 10 Time, t (s) Transient thermal impedance PDE-M200JS12AW-0 http://store.iiic.cc/ HITACHI POWER SEMICONDUCTORS Notices 1.The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. 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