TOSHIBA TLP421 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP421 OFFICE EQUIPMENT Unit in mm HOUSEHOLD APPLIANCES SOLID STATE RELAYS 4 4 SWITCHING POWER SUPPLIES <_Ir VARIOUS CONTROLLERS i SIGNAL TRANSMISSION BETWEEN DIFFERENT VOLTAGE CIRCUITS <I 4 2 7.62+0.25 4.58+0.25. The TOSHIBA TLP421 consists of a silicone photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a four lead plastic DIP (DIP4) with having high isolation voltage p-2H0.18 (AC : 5k Vpmsg (nin)). osto1 3.651338 |, 0,840.25 2.5MIN., 2.5440.25 @ Collector-Emitter Voltage : 80V (min) Current Transfer Ratio : 50% (min) Rank GB : 100% (min) TOSHIBA __11-5B2 Weight : 0.26 e Isolation Voltage : 5000 Vims (min) e UL Recognized > UL1577 PIN CONFIGURATIONS e BSI Approved : BS EN60065 : 1994 (TOP VIEW) Approved No. 8411 BS EN60950 : 1992 10 A Approved No. 8412 $a e SEMKO Approved : EN60065, EN60950, EN60335 20 H 3 Approved No. 9910249 /01 1 : ANODE 2: CATHODE 3 : EMITTER 4 : COLLECTOR 980910EBC1 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. @ The products described in this document are subject to the foreign exchange and foreign trade laws. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 2000-06-09 1/8TOSHIBA TLP421 e Option (D4) type TUV Approved : DIN VDE0884 Approved No. R9950202 Maximum Operating Insulation Voltage Maximum Permissible Overvoltage : 890 VpK : 8000 VpK (Note) : When a VDE0884 approved type is needed, please designate the Option (D4) Making the VDE Application : @ Construction Mechanical Rating | 7.62mm pich | 10.16 mm pich Typical type DIN VDE0884 TLPxxxF type Creepage Distance Clearance CURRENT TRANSFER RATIO 7.0 mm (min) 7.0 mm (min) Insulation Thickness | 0.4mm (min) 8.0 mm (min) 8.0 mm (min) 0.4mm (min) CURRENT TRANSFER RATIO (%) ChASST- (Ic / Ip) MARKING OF CLASSIFICATION TYPE ey) Ip =5mA, Vor = 5V, Ta = 25C MIN MAX (None) 50 600 Blank, Y, Y+, G, G+, B, B+, GB Rank Y 50 150 Y, Y+ TLP421 | Rank GR 100 300 G, G+ Rank BL 200 600 B, B+ Rank GB 100 600 G, G+, B, B+, GB (*1) : Ex. Rank GB : TLP421 (GB) (Note): Application type name for certification test, please use standard product type name, i.e. TLP421 (GB) ; TLP421 2000-06-09 2/8TOSHIBA TLP421 MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC STMBOL RATING UNIT Forward Current Ip 60 mA Forward Current Derating (Ta = 39C) Alp/C 0.7 mA /C | Pulse Forward Current (Note 2)| Ipp 1 A fe Power Dissipation Pp 100 mW Power Dissipation Derating APD /C 1.0 mW /C Reverse Voltage VR 5 Vv Junction Temperature Tj 125 C we Collector-Emitter Voltage VCEO 80 Vv | Emitter-Collector Voltage VECO 7 Vv 4! Collector Current Ic 50 mA a Power Dissipation (Single Circuit) Pc 150 mW & | Power Dissipation Deratin 5 Al(Ta= 25C) (Single Circuit) APC /C hs mW /C A Junction Temperature Tj 125 C Operating Temperature Range Topr 55~100 C Storage Temperature Range Tstg 55~125 C Lead Soldering Temperature (10s) T sol 260 C Total Package Power Dissipation Py 250 mW (ee noe Power Dissipation Derating APp/C 95 mW /C Isolation Voltage (Note 3) BVs 5000 Vrms (Note 2) : 100 us pulse, 100 Hz frequency (Note 3) : AC, 1min., R.H. = 60%. Apply voltage to LED pin and detector pin together. RECOMMENDED OPERATING CONDITIONS CHARACTERISTIC SYMBOL | MIN | TYP. | MAX | UNIT Supply Voltage Vcc 5 24 Vv Forward Current Ip = 16 25 | mA Collector Current Ic 1 10 | mA Operating Temperature Topr 25 |; 85 C 2000-06-09 3/8TOSHIBA TLP421 INDIVIDUAL ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN | TYP. | MAX | UNIT Q |Forward Voltage VE Ip = 10mA 1.0 1.2] 1.3 Vv fl |Reverse Current IR VR=5V 10 | A 4 Capacitance Cr V=0, f= 1MHz 30} pF Collector-Emitter _ Breakdown Voltage V (BR) CEO|! = 0.5 mA 80 i i v & /Emitter-Collector Breakdown Voltage V (BR) ECO|IE = 0.1 mA 7 i i Vv oO VCE = 24V (pelo 1 Light 0.01 | 0.1 aN a Below 1000 x | (0.1) | (0) aad a Collector Dark Current Ip (cKo) Vop=24V (Ambient Light 061 50 A A Ta = 85C _\Below 1000 &x ~ | @ |] eo | Capacitance _ _ (Collector to Emitter) CCE V=0, f= 1MHz 10 pF COUPLED ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN | TYP. | MAX | UNIT : Ip = 5mA, Vog =5V 50 600 Current Transfer Ratio Ic /Ip Rank GB | 100 = 600 % Ip =1mA, VoR =04V | 6 | Saturated CTR Ic / TR (gat) Rank GB 30 = % Ic = 2.4mA, Ip =8mA | | 04 Collector-Emitter Saturation c FE = Voltage VCE (sat) [Ic = 0.2 mA, Ip = 1mA 0.2 Vv 8 Rank GB [ | | 04 ISOLATION CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN | TYP. | MAX | UNIT Capacitance = = . F (Input to Output) Cs Vs = 0, = 1 MHz 0.8 P Isolation Resistance Rg Vs = 500V 1x10! 10!) QO AC, 1 minute 5000 Sy Isolation Voltage BVs AC, 1 second, in oil |10000; rms DC, 1 minute, in oil 10000; Vde 2000-06-09 4/8TOSHIBA TLP421 SWITCHING CHARACTERISTICS (Ta = 25C) CHARACTERISTICS SYMBOL TEST CONDITION MIN | TYP. | MAX | UNIT Rise Time ty 2 _ Fall Time te Voc = 10V, I = 2mA = 3 | . Turn-on Time ton Ry = 1000 3 # Turn-off Time toff 3 Turn-on Time toN Rr =19kO (Fig 1) L= 2 Storage Time tg ve .=5BV Ip = 16mA 8 25) LS Turn-off Time tOFF CO = 9 Ys OF = 50 Ip If PW 9 VCC ty R Vv 199 _* VCE VCE 0.5V Lf ton tOFF Fig.1 Switching Time Test Circuit 2000-06-09 5/8TOSHIBA TLP421 Ir Ta 100 80 60 Ip (mA) 40 20 ALLOWABLE FORWARD CURRENT 20 0 20 40 60 80 100 120 AMBIENT TEMPERATURE Ta (C) Irp DR 3000 1000 100 PULSE FORWARD CURRENT Ipp (mA) 10 0.001 0.01 0.1 1 DUTY CYCLE RATIO DR AVF/ATa IF FORWARD VOLTAGE TEMPERATURE COEFFICIENT AVp/ATa (mV/C) 0.1 1 10 100 FORWARD CURRENT Ip (mA) Pc Ta - DISSIPATION Po (mW) oe Qo ALLOWABLE COLLECTOR POWER ray 3S 0 20 0 20 40 60 80 100 120 AMBIENT TEMPERATURE Ta (C) If VE FORWARD CURRENT Ip (mA) 0.4 0.6 0.8 1.0 1.2 14 1.6 FORWARD VOLTAGE Vp (V) Ifp VFP PULSE WIDTH = 10 ws REPETITIVE FREQUENCY = 100 Hz Ta = 25C PULSE FORWARD CURRENT Ipp (mA) 0 0.4 0.8 1.2 1.6 2.0 2.4 PULSE FORWARD VOLTAGE Vpp CV) 2000-06-09 6/8TOSHIBA TLP421 Ip Ta Ic VCE 10 < + < BQ 1 E ea 2 a 3 01 z 3 2 5 = 001 2 4 e & B 2 a 4 & 0.001 3 8 Q 3 5 8 0.0001 0 20 40 60 80 100 0 2 4 6 8 10 AMBIENT TEMPERATURE Ta (C) COLLECTOR-EMITTER VOLTAGE VcE (V) Ic VCE Ic IF 30 T T 1 50 | 20 10 L" Xx 4 i, vat 10 8 | SS N\ oO I (mA) COLLECTOR CURRENT Iq (mA) 10 7 f A SAMPLE B Ip = 2mA 5 1 oO x o 0 EB oO 0 0.2 0.4 0.6 0.8 1.0 1.2 ig | 2 2 COLLECTOR-EMITTER VOLTAGE Vcg (V) 01 Ic/Ip IF 1000 Ta = 25C Vog=5V - Vcr =04V 0.1 1 10 100 SAMPLE A 0.01 100 FORWARD CURRENT Ip (mA) Ta = 25C Vcr =5V -VcR=04V CURRENT TRANSFER RATIO Ic/Ip (%) rm 0.1 1 10 100 FORWARD CURRENT Ip (mA) 2000-06-09 7/8TOSHIBA TLP421 Ic - Ta VCE (sat) Ta 100 0.20 10 0.08 COLLECTOR CURRENT Ig (mA) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) VcE =5V 0.1 20 0 20 40 60 80 100 20 0 20 40 60 80 100 AMBIENT TEMPERATURE Ta (C) AMBIENT TEMPERATURE Ta (C) SWITCHING TIME Ry, 1000 Ta = 25C Ip = 16mA Voc =5V 100 SWITCHING TIME (us) 10 1 10 100 LOAD RESISTANCE Ry &Q) 2000-06-09 8/8