RiP Smeall-Signal Transistors CASE 20-03 (TO-72) CASE 22-03 (TO-18) CASE 244A-01 (TO-117) CASE 317-01 Macro-X CASE 317A-01 Macro-T CASE 303-01 CASE 79-02 (TO-39) CASE 79-03 \ KR CASE 305-01 LB Oe oo d CASE 305A-01 g oe te CASE 317D Motorola's small-signal, low power RF transistor product range includes transistors with gain-bandwidths of 1.0 GHz to 8.0 GHz operating at currents of 0.25 mA to over 140 mA. These devices are available in a wide variety of package types; metal can, plastic Macro-X and Macro-T, hermetic ce- ramic and microminiature. Most of these transistors are fully Typicat Gain-Bandwidth Product versus Collector Current Bp gee pepe op a { ae fy. GAIN- BANDWIDTH PRODUCT - GHz or OCS OOSC~iSH SC SC<iaSCCCONS#CNSC;*;**SPSS ic. COLLECTOR CURRENT ma spose py characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, ow power driver spec- ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rel pro- cessing to meet unique customer requirements. RF Small-Signal Transistors Motorola small-signal and rnedium power RF transistors with gain-bandwidth products from 1.0 GHz to 8.0 GHz operate with currents from 0.25 mA to over 140 mA. The following chart, combined with the tables of package options, enables the circuit designer to select the optimum device from Motorola's wide range of transistor/package combinations. MRF501, MRF502 BFX89, BFY90 wo MOTOROLA EUROPEAN MASTER SELECTION GUIDE 3-66 1 2N3866, 2N3866A 10 2N4957, 2N4958, 2N4959, PNP 2 2N5160, MM4018, PNP 12 2N6603, BFR9O, MRFS01, MRF904 3 2N3948, 2N4427, MRF207 13 2N6604, BFR91, MRF911, MRF914 4 2N5109, 2N5943 14 BFR96, MRF961, MRF962, MRF965 5 2N5583, PNP 15 BFW92A 6 2N5836, 2N5837 16 MRF559 7 MRF511, MRFS17, MRF525 17 MRF580. MRF581, MRF586, MRF587 8 2N2857. 2N3839, 2N5179, 18 MRF571, MRFS72 MRF536, MRF534, MM4049, PNP RF SMALL-SIGNAL TRANSISTORS (continued) CATV, MATV, and Class A Linear Transistors The devices listed below are excellent for Class A linear CATV/MATV applications and are listed according to increasing gain- bandwidth (f7). More information concerning the device for your specific linear design needs can be obtained through your local Motorola Sales Office or Motorola distributor. Nominal Test Noise Figure Distortion Specifications Conditions ff 2nd 3rd 12 Ch. Output Device Vcec MHz Max/Freq. Order Order Cross- Level Type Voits/mA Min dB/MHz IMD IMD Mod. dBmv Package MRF501 6/5 600 4.5*/200 TO-72 MRF502 6/5 800 4.0/200 TO-72 2N5179 6/5 900 4.5/200 TO-72 BFY90 5/2 1000 5.0/500 TO-72 BFX89 5/25 1200 6.5/500 TO-72 2N5109 15/50 1200 3.0/200 TO-39 2N5943 15/50 1200 3.4/200 - 50 - 42 +50 TO-39 MRF511 20/80 1500 7,3*/200 50 -65 -57 +50 244A-01 MRF517 15/60 2200 7.5/300 ~60 -72 -57 +45 TO-39 BFW92A 6/2 4500* 3.0*/500 | 3174-01 MRF586 14/70 4500* 3.0/500 ~50 | ~72 +50 TO-39 BFR90 10/14 5000* 2.4"/500 317A-01 BFR91 /35 5000* 1.9*/500 317A-01 BFR96 10/50 5000* 3.0*/500 317A-01 MRF961 10/50 5000* 2.0*/500 317-01 MRF962 10/50 5000* 2.0/500 303-01 MRF965 10/50 5000* 2.0/500 TO-46 MRF581 10/75 5000* 3.0/500 ~65 +50 317-01 MRF587 14/70 5500 3.0/500 2 ~72 +50 244A-01 Typ High-Speed Switches The transistors listed below are for use as high-frequency current-mode switches. They are also suitable for RF amplifier and oscillator applications. The devices are listed in ascending order of collector current. Test Conditions fr Ic/VcE MHz tp'Cc Device Type mA/Volts Min Max Package 2N3959 10/10 1300 25 TO-18 2N3960 10/10 1600 40 TO-18 2N5835 10/6.0 2500 5.0* TO-72 MM4049" 20/5.0 4000 15 TO-72 MRF914 20/10 4500** _ TO-72 2N5943 50/15 1200 5.5** TO-39 2N5583* 50/10 1000 8.0* TO-39 2N5836 50/6.0 2000 6.0** TO-46 2N5837 100/3.0 1700 6.0* TO-46 PNP = **Typ MOTOROLA EUROPEAN MASTER SELECTION GUIDE 3-68 RF SMALL-SIGNAL TRANSISTORS (continued) Small-Signal Amplifier Transistor Selection by Package In small-signal RF applications the package style is often determined by the end application, or circuit construction technique. To aid the circuit designer in device selection, below are listed the Motorola broad range of RF small-signal amplifier transistors organized a by package. Devices for other applications such as oscillators or switches are shown in the appropriate preceding tables. 3 TO-39 METAL CAN Gain BW Noise Figure Gain Maximum Ratings tr lo NF f le dB f V(BR)CEO lo Pr Device Type GHz mA dB MHz mA Min MHz Vv mA mw 2N5109 1.2 50 3.0 200 16 11 216 20 400 2.50 2N5943 1.2 50 3.4 200 30 11.4" 200 30 400 3.50 MRF525t 2.5 50 4.0 400 _ 13 400 35** 150 2.50 MRF517 2.7 60 75 300 50 10 300 35** 150 2.50 MRF586 45 70 3.0 500 70 14* 500 17 200 2.50 +Grounded Emitter TO-39 Typ V(BR)CBO Plastic SOE Case 317-01/317A-01 Gain BW Noise Figure Gian Maximum Ratings fr lo NF f Io dB f le Pr Device Type GHz mA dB MHz mA Min MHz V(BR)CEO v mA mW MRF931 3.0 1.0 3.8 500 0.25 16* 500 5.0 5.0 50 MRF559 3.0 100 13.0* 512 18 150 2000 BFW92A 4.0 25 2.5 500 2.0 16 500 5.0 50 190 MRF901 4.5 15 2.0 1000 5.0 10 1000 15 30 375 BFR96 45 50 2.0* 500 10 12 500 15 100 600 MRF961 4.5 50 2.0* 500 10 13.5 500 15 100 500 MRF911 5.0 30 25 1000 5.0 12.5* 1000 12 40 400 BFR90 5.0 14 2.4 500 2.0 18* 500 15 30 180 BFR91 5.0 30 1.9 500 2.0 16* 500 12 35 180 MRF580 5.0 75 2.0* 500 50.0 11.0 500 18 200 2500 MRF581 5.0 75 2.0* 500 50.0 13.0 500 18 200 2500 MRF536** 5.0 20 45 1000 3.0 8.5 1000 10 30 300 MRF2369 6.0 60 1.5 1000 5.0 10 1000 15 70 750 MRF571 8.0 5.0 1.0* 500 5.0 13.5 500 10 70 2500 *Typ **PNP Ceramic SOE Case 244A-01, 303-01 Gain BW Noise Figure Gain Maximum Ratings fy lo NF f lo dB f le Pr Device Type GHz mA dB MHz mA Min MHz V(BR)CEO V mA mw 2N5947 1.6 75 3.8 200 50 10 250 30 400 5000 MRF511 2.1 80 7.3 200 50 10 250 25 250 5000 2N6603 45 15 2.0 1000 5.0 13 1000 15 30 400 MRF962 4.5 50 2.0 500 10 15 500 15 100 750 2N6604 5.0 30 2.5 1000 5.0 14 1000 12 50 500 MRF587 5.5 70 3.0 500 70 15 500 17 200 5800 MRF572 8.0 50 2.0 1000 5.0 10 1000 10 70 | == 2500 Typ MOTOROLA EUROPEAN MASTER SELECTION GUIDE 3-70