1998. 1. 9 1/1
SEMICONDUCTOR
TECHNICAL DATA
MPSA55
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 2
AUDIO FREQUENCY AMPLIFIER APPLICATIONS.
FEATURES
ᴌComplementary to MPSA05.
ᴌDriver Stage Application of 20 to 25 Watts Amplifiers.
MAXIMUM RATING (Ta=25ᴱ)
TO-92
DIM MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1 2 3
B
AJ
KG
H
FF
L
E
C
E
C
M
N
0.45 MAXM
1.00N
1. EMITTER
3. COLLECTOR
2. BASE
+
_
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-60V, IE=0 - - -100 nA
Emitter Cut-off Current ICEO VCE=-60V, IB=0 -- -100 nA
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-5mA, IB=0 -60 - - V
DC Current Gain
hFE(1) VCE=-1V, IC=-10mA 100 - -
hFE(2) VCE=-1V, IC=-100mA 100 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=-100mA, IB=-10mA - - -0.25 V
Base-Emitter Voltage VBE VCE=-1V, IC=-100mA - - -1.2 V
Transition Frequency fTVCE=-1V, IC=-100mA 50 - - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 14 - pF
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO -60 V
Collector-Emitter Voltage VCEO -60 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC-500 mA
Emitter Current IE500 mA
Collector Power Dissipation PC625 mW
Junction Temperature Tj150 ᴱ
Storage Temperature Tstg -55ᴕ150 ᴱ
