2N6050 2N6051 2N6052
MAXIMUM RATINGS: (TC=25°C) SYMBOL 2N6057 2N6058 2N6059 UNITS
Collector-Base Voltage VCBO 60 80 100 V
Collector-Emitter Voltage VCEO 60 80 100 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC 12 A
Peak Collector Current ICM 20 A
Continuous Base Current IB 0.2 A
Power Dissipation PD 150 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
Thermal Resistance JC 1.17 °C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICEV V
CE=Rated VCEO, VEB=1.5V 0.5 mA
ICEV V
CE=Rated VCEO, VEB=1.5V, TC=150°C 5.0 mA
ICEO V
CE=½Rated VCEO 1.0 mA
IEBO V
EB=5.0V 2.0 mA
BVCEO I
C=100mA, (2N6050, 2N6057) 60 V
BVCEO I
C=100mA, (2N6051, 2N6058) 80 V
BVCEO I
C=100mA, (2N6052, 2N6059) 100 V
VCE(SAT) I
C=6.0A, IB=24mA 2.0 V
VCE(SAT) I
C=12A, IB=120mA 3.0 V
VBE(SAT) I
C=12A, IB=120mA 4.0 V
VBE(ON) V
CE=3.0V, IC=6.0A 2.8 V
hFE V
CE=3.0V, IC=6.0A 750 18K
hFE V
CE=3.0V, IC=12A 100
hfe V
CE=3.0V, IC=5.0A, f=1.0kHz 300
fT V
CE=3.0V, IC=5.0A, f=1.0MHz 4.0 MHz
Cob V
CB=10V, IE=0, f=100kHz (PNP types) 500 pF
Cob V
CB=10V, IE=0, f=100kHz (NPN types) 300 pF
2N6050 2N6051 2N6052 PNP
2N6057 2N6058 2N6059 NPN
COMPLEMENTARY SILICON
DARLINGTON POWER
TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6050, 2N6057
series types are complementary silicon Darlington
power transistors, manufactured by the epitaxial base
process, designed for high gain amplifier and switching
applications.
MARKING: FULL PART NUMBER
TO-3 CASE
R1 (18-September 2012)
www.centralsemi.com
2N6050 2N6051 2N6052 PNP
2N6057 2N6058 2N6059 NPN
COMPLEMENTARY SILICON
DARLINGTON POWER
TRANSISTORS
TO-3 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Emitter
Case) Collector
MARKING:
FULL PART NUMBER
www.centralsemi.com
R1 (18-September 2012)
