DE475-102N21A
RF Power MOSFET
VDSS = 1000 V
ID25 = 24 A
RDS(on) ≤ 0.45 Ω
ΩΩ
Ω
PDC = 1800W
Symbol Test Conditions Maximum Ratings
VDSS TJ = 25°C to 150°C 1000 V
VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V
VGS Continuous ±20 V
VGSM Transient ±30 V
ID25 Tc = 25°C 24 A
IDM Tc = 25°C, pulse width limited by TJM 144 A
IAR Tc = 25°C 21 A
EAR Tc = 25°C 30 mJ
dv/dt
IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS,
Tj ≤ 150°C, RG = 0.2Ω 5 V/ns
IS = 0 >200 V/ns
PDC 1800 W
PDHS Tc = 25°C
Derate 4.0W/°C above 25°C 730 W
PDAMB Tc = 25°C 4.5 W
RthJC 0.08 C/W
RthJHS 0.20 C/W
Symbol Test Conditions Characteristic Values
TJ = 25°C unless otherwise specified
min. typ. max.
VDSS VGS = 0 V, ID = 3 ma 1000 V
VGS(th) VDS = VGS, ID = 4 ma 3.5 4.4 5.5 V
IGSS VGS = ±20 VDC, VDS = 0 ±100 nA
IDSS VDS = 0.8 VDSS TJ = 25°C
VGS = 0 TJ = 125°C
50
1 µA
mA
RDS(on) VGS = 15 V, ID = 0.5ID25
Pulse test, t ≤ 300µS, duty cycle d ≤ 2% 0.45 Ω
gfs VDS = 15 V, ID = 0.5ID25, pulse test 12 S
TJ -55 +175 °C
TJM 175 °C
Tstg -55 +175 °C
TL 1.6mm (0.063 in) from case for 10 s 300 °C
Weight 3 g
Features
• Isolated Substrate
− high isolation voltage (>2500V)
− excellent thermal transfer
− Increased temperature and power
cycling capability
• IXYS advanced low Qg process
• Low gate charge and capacitances
− easier to drive
− faster switching
• Low RDS(on)
• Very low insertion inductance (<2nH)
• No beryllium oxide (BeO) or other haz-
ardous materials
Advantages
• Optimized for RF and high speed
switching at frequencies to 30MHz
• Easy to mount—no insulators needed
• High power density
♦ N-Channel Enhancement Mode
♦ Low Qg and Rg
♦ High dv/dt
♦ Nanosecond Switching
♦ 30MHz Maximum Frequency
DRAIN
SG1 SG2
GATE
SD1 SD2
DE475-102N21A
RF Power MOSFET
Source-Drain Diode Characteristic Values
(TJ = 25°C unless otherwise specified)
Symbol Test Conditions min. typ. max.
IS VGS = 0 V 21 A
ISM Repetitive; pulse width limited by TJM 144 A
VSD 1.5 V
Trr 200 ns
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2%
QRM IF = IS, -di/dt = 100A/µs,
VR = 100V
0.6 µC
IRM 8 A
IXYS RF reserves the right to change limits, test conditions and dimensions.
IXYS RF MOSFETS are covered by one or more of the following U.S. patents:
4,835,592 4,860,072 4,881,106 4,891,686 4,931,844 5,017,508
5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715
5,381,025 5,640,045
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified)
min. typ. max.
RG 0.3 Ω
Ciss 5500 pF
Coss VGS = 0 V, VDS = 0.8 VDSS(max),
f = 1 MHz 190 pF
Crss 52 pF
Cstray Back Metal to any Pin 46 pF
Td(on) 5 ns
Ton VGS = 15 V, VDS = 0.8 VDSS
ID = 0.5 IDM
RG = 0.2 Ω (External)
5 ns
Td(off) 5 ns
Toff 8 ns
Qg(on) 155 nC
Qgs VGS = 10 V, VDS = 0.5 VDSS
ID = 0.5 ID25 33 nC
Qgd 84 nC
For detailed device mounting and installation instructions, see the “Device Installation & Mounting Instructions” technical note on the
IXYSRF web site at;
http://www.ixysrf.com/pdf/switch_mode/appnotes/7de_series_mosfet_installation_instructions.pdf
CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device.
Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information pub-
lished in this document at any time and without notice.
DE475-102N21A
RF Power MOSFET
VDS vs. Capacitance
10
100
1000
10000
0 100 200 300 400 500 600 700 800
V
DS
Voltage (V)
Capacitance (pF)
Extended Typical Output Characte ristics
PW = 15 µS
0
20
40
60
80
100
0 25 50 75 100 125
VDS, Drain-to-Source Voltage (V)
ID, Drain Currnet (A)
Gate Charge vs. Gate-to-Source Voltage
V
DS
= 500V, I
D
= 12A
0
2
4
6
8
10
12
14
16
0 50 100 150 200 250
Gate Charge (nC)
Gate-to-Source Voltage (V)
Typical Transfer Characteristics
VDS = 50V, ID = 12A
0
10
20
30
40
50
60
70
5 6 7 8 9 10 11 12 13 14 15
VGS, Gate-to Source Voltage (V)
ID, Drain Current (A)
Typical Output Characte ristics
PW = 15 µS
0
5
10
15
20
25
30
0 25 50 75 100 125
VDS, Drain-to-Source Voltage (V)
ID, Drain Currnet (A)
Ciss
Coss
Crss
Fig. 1 Fig. 2
Fig. 3 Fig. 4
Fig. 5
Top 7.5-15V
7V
6.5V
6V
Bottom 5.5V
Top 9-15V
8.5V
8V
7.5V
7V
6.5V
Bottom 6V
DE475-102N21A
RF Power MOSFET
Fig. 6 Package Drawing
Gate
Source
Source
Source
Source
Drain
DE475-102N21A
RF Power MOSFET
An IXYS Company
2401 Research Blvd., Suite 108
Fort Collins, CO USA 80526
970-493-1901 Fax: 970-493-1903
Email: sales@ixyscolorado.com
Web: http://www.ixyscolorado.com
102N21A DE-SERIES SPICE Model (Preliminary)
The DE-SERIES SPICE Model is illustrated in Figure 7. The model is an expansion of the SPICE
level 3 MOSFET model. It includes the stray inductive terms L
G
, L
S
and L
D
. Rd is the R
DS(ON)
of the
device, Rds is the resistive leakage term. The output capacitance, C
OSS
, and reverse transfer ca-
pacitance, C
RSS
are modeled with reversed biased diodes. This provides a varactor type response
necessary for a high power device model. The turn on delay and the turn off delay are adjusted via
Ron and Roff.
Figure 7 DE-SERIES SPICE Model
This SPICE model may be downloaded as a text file from the IXYSRF web site at
http://www.ixysrf.com/products/switch_mode.html
http://www.ixysrf.com/spice/de475-102n21a.html
Net List:
.SUBCKT 102N21A 10 20 30
* TERMINALS: D G S
* 1000 Volt 21 Amp 0.45 ohm N-Channel Power MOSFET
* REV.A 01-09-02
M1 1 2 3 3 DMOS L=1U W=1U
RON 5 6 0.3
DON 6 2 D1
ROF 5 7 .1
DOF 2 7 D1
D1CRS 2 8 D2
D2CRS 1 8 D2
CGS 2 3 5.5N
RD 4 1 0.45
DCOS 3 1 D3
RDS 1 3 5.0MEG
LS 3 30 .5N
LD 10 4 1N
LG 20 5 1N
.MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=3.8)
.MODEL D1 D (IS=.5F CJO=1P BV=100 M=.5 VJ=.6 TT=1N)
.MODEL D2 D (IS=.5F CJO=400P BV=1000 M=.4 VJ=.6 TT=400N RS=10M)
.MODEL D3 D (IS=.5F CJO=900P BV=1000 M=.3 VJ=.4 TT=400N RS=10M)
.ENDS
Doc #9200-0247 Rev 6
© 2009 IXYS RF
