2N4036
2N4037
PNP SILICON TRANSISTOR DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N4036, 2N4037
are epitaxial planar PNP Silicon Transistors designed
for small signal, medium power, general purpose
industrial applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TC=25°C) SYMBOL 2N4036 2N4037 UNITS
Collector-Base Voltage VCBO 90 60 V
Collector-Emitter Voltage VCEO 65 40 V
Emitter-Base Voltage VEBO 7.0 7.0 V
Continuous Collector Current IC 1.0 A
Continuous Base Current IB 0.5 A
Power Dissipation PD 5.0 W
Power Dissipation (TA=25°C) PD 1.0 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
Thermal Resistance ΘJC 35 °C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
2N4036 2N4037
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
ICBO V
CB=90V - 1.0 - - µA
ICBO V
CB=60V - - - 0.25 µA
ICEX V
CE=85V, VEB=1.5V - 100 - - µA
ICEX V
CE=30V, VEB=1.5V, TC=150°C - - - 100 mA
IEBO V
EB=7.0V - 10 - - µA
IEBO V
EB=5.0V - - - 1.0 µA
BVCEO I
C=100mA 65 - 40 - V
VCE(SAT) I
C=150mA, IB=15mA - 0.65 - 1.4 V
VBE(SAT) I
C=150mA, IB=15mA - 1.4 - - V
VBE(ON) V
CE=10V, IC=150mA - - - 1.5 V
hFE V
CE=10V, IC=0.1mA 20 - - -
hFE V
CE=10V, IC=1.0mA - - 15 -
hFE V
CE=10V, IC=150mA 40 140 50 250
hFE V
CE=2.0V, IC=150mA 20 200 - -
hFE V
CE=10V, IC=500mA 20 - - -
fT V
CE=10V, IC=50mA, f=20MHz 60 - 60 - MHz
Cob V
CB=10V, IE=0, f=1.0MHz - 30 - 30 pF
ton V
CE=30V, IC=150mA, IB1=IB2=15mA - 110 - - ns
toff V
CE=30V, IC=150mA, IB1=IB2=15mA - 700 - - ns
TO-39 CASE
R1 (1-April 2010)
www.centralsemi.com