V
RRM
= 200 V - 1400 V
I
F
=100 A
Features
• High Surge Capability DO-8 Package
• Types up to 1400 V V
RRM
Parameter Symbol 1N3295A(R) 1N3296A(R) Unit
Re
p
etitive
p
eak reverse volta
g
eV
RRM
1000 1200 V
1N3297A(R)
1400
Conditions
1N3295A(R) thru 1N3297A(R)
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Silicon Standard
Recover
y
Diode
2
1
1
2
2
1
2
1
Standard"R"Orientation
pp g
DC blocking voltage V
DC
1000 1200 V
Continuous forward current I
F
100 100 A
I
2
t for fusing I
2
t60 Hz Half wave 22000 22000 A
2
sec
Operating temperature T
j
-40 to 200 -40 to 200 °C
Storage temperature T
stg
-40 to 200 -40 to 200 °C
Parameter Symbol 1N3295A(R) 1N3296A(R) Unit
Diode forward voltage 1.5 1.5
Thermal characteristics
Thermal resistance, junction -
case R
thJC
0.40 0.40 °C/W
0.40
-40 to 200
-40 to 200
1N3297A(R)
1.5
7
1400
100
T
C
= 25 °C, t
p
= 8.3 ms
Surge non-repetitive forward
current, Half Sine Wave I
F,SM
V
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Reverse current I
R
V
R
= V
RRM
, T
j
= 130 °C 11 9 mA
2300
I
F
= 100 A, T
j
= 130 °C
T
C
≤ 130 °C
Conditions
2300 2300 A
V
F
22000
www.genesicsemi.com 1
1N3295A(R) thru 1N3297A(R)
www.genesicsemi.com 2
