© 2020 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: BA.08/26/20
Thyristors
Surface Mount – 600V - 800V > MCR08B, MCR08M
• Sensitive Gate Trigger
Current
• Blocking Voltage to 600 V
• Glass Passivated Surface
for Reliability and
Uniformity
• Surface Mount Package
• These Devices are
Pb−Free and are RoHS
Compliant
Features
PNPN devices designed for line powered consumer
applications such as relay and lamp drivers, small motor
controls, gate drivers for larger thyristors, and sensing and
detection circuits. Supplied in surface mount package for
use in automated manufacturing.
Description
MCR08B, MCR08M
Functional Diagram
Additional Information
Samples
Resources
Datasheet
Pin Out
Pb
1 2 3
4
K
G
A
RoHS
© 2020 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: BA.08/26/20
Thyristors
Surface Mount – 600V - 800V > MCR08B, MCR08M
Rating Symbol Value Unit
Peak Repetitive Off−State Voltage (Note 1)
(−40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) MCR08B
MCR08M VDRM,
VRRM
200
600 V
On-State RMS Current (All Conduction Angles; TC = 80°C) IT (RMS) 0.8 A
Peak Non-Repetitive Surge Current
(1/2 Cycle Sine Wave, 60 Hz, TC = 25°C) ITSM 8.0 A
Circuit Fusing Consideration (t = 8.3 ms) I2t 0.4 A²sec
Forward Peak Gate Power (TC = 80°C, t = 1.0 µs) PGM 0.1 W
Average Gate Power (t = 8.3 ms, TC = 80°C) PGM (AV) 0.01 W
Operating Junction Temperature Range TJ-40 to +125 °C
Storage Temperature Range Tstg -40 to +150 °C
Maximum Ratings (TJ = 25°C unless otherwise noted)
Thermal Characteristics
Rating Symbol Value Unit
Thermal Resistance, Junction−to−Case (AC) PCB Mounted per Figure 1 R8JC 2.2 °C/W
Thermal Resistance, Junction−to−Tab Measured on Anode Tab Adjacent to Compound R8JT 25 °C/W
Maximum Device Temperature for Soldering Purposes (for 10 Seconds Maximum) TL260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Electrical Characteristics - OFF (TJ = 25°C unless otherwise noted ; Electricals apply in both directions)
Electrical Characteristics - ON (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Ty p Max Unit
Peak Repetitive Forward or Reverse Blocking Current (Note 3) (VAK = Rated
VDRM or VRRM, RGK = 1 kΩ
TJ = 25°C IDRM,
IRRM
- - 10 μA
TJ = 125°C - - 200 mA
Dynamic Characteristics
Characteristic Symbol Min Ty p Max Unit
Critical Rate-of-Rise of Off State Voltage
(Vpk = Rated VDRM, TC = 110°C, RGK = 1 kΩ, Exponential Method) dv/dt 10 − − V/µs
Critical Rate of Rise of On−State Current
(IPK = 50 A, Pw = 40 sec, diG/dt = 1 A/sec, Igt = 50 mA di/dt − − 50 A/ms
Characteristic Symbol Min Ty p Max Unit
Peak Forward On-State Voltage (Note 2) (IT = 1.0 A Peak) VTM − − 1.7 V
Gate Trigger Current (Continuous dc) (Note 4) (VAK = 12 Vdc, RL = 100 Ω) IGT − − 200 mA
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ω) IH− − 5.0 mA
Holding Current (Note 3) (VAK = 12 Vdc, Initiating Current = 20 mA) VGT − − 0.8 V
Turn−On Time (VAK = 12 Vdc, ITM = 5 Adc, IGT = 5 mA) tgt − 1.25 − µs
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
3. RGK = 1000 Q is included in measurement.
4. RGK is not included in measurement.
© 2020 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: BA.08/26/20
Thyristors
Surface Mount – 600V - 800V > MCR08B, MCR08M
Voltage Current Characteristic of SCR
Symbol Parameter
VDRM Peak Repetitive Forward Off State Voltage
IDRM Peak Forward Blocking Current
VRRM Peak Repetitive Reverse Off State Voltage
IRRM Peak Reverse Blocking Current
VTM Maximum On State Voltage
IHHolding Current
Figure 1. PCB for Thermal Impedance and Power Testing of SOT-223
+Current
+Voltage
VTM
IH
on state
IRRM at VRRM
IDRM at VDRM
Forward Blocking Region
(Off State)
Reverse A
valanche Region
Anode-
Forward Blocking Region
(Off State)
Anode+
0.079
2.0
0.079
2.0
0.059
1.5
0.091
2.3
0.091
2.3
0.472
12.0
0.096
2.44
0.984
25.0
0.244
6.2
0.059
1.5
0.059
1.5
0.096
2.44
0.096
2.44
0.059
1.5
0.059
1.5
0.15
3.8
inches
mm
Board mounted vertically cinch 8840 edge connector.
Board Thickness = 65Mil.
Foil Thickness = 2.5Mil.
Material: G10 Fiberglass Base Epoxy
© 2020 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: BA.08/26/20
Thyristors
Surface Mount – 600V - 800V > MCR08B, MCR08M
vT
IT
10
1.0
0.1
0.01 4.01.00 2.03 .0
TYPICAL AT TJ = 110ϒC
MAX AT T
J = 110ϒC
MAX AT T
J = 25ϒC
I
110
0.5
0.30.20.10
100
90
80
60
50
40
30
20 0.4
70
dc
180°
α = 30°
60°90°
120°
α
α = CONDUCTION
ANGLE
50 OR 60 Hz HALFWAVE
TA, MAXIMUM ALLOWABLE
AMBIEN T TEMPERATURE ( C)°
Figure 2. On-State Characteristics
Figure 4. Current Derating, Minimum Pad Size Reference:
Ambient Temperature
Figure 3. Junction to Ambient Thermal Resistance vs
Copper Tab Area
Figure 5. Current Derating, 1.0 cm Square Pad Reference:
Ambient Temperature
180°
110
100
90
80
60
50
40
30
20
70
IT(AV)
0.5
0.40.30.20.10
TA, MAXIMUM ALLOWABLE
AMBIEN T TEMPERATURE ( C)°
60°
120°
1.0 cm
2 FOIL, 50 OR
60 Hz HALFWAVE
dc
90°
α = 30°
α
α = CONDUCTION
ANGLE
PAD AREA = 4.0 cm
2, 50
OR 60 Hz HALFWAVE
TA, MAXIMUM ALLOWABLE
AMBIEN T TEMPERATURE ( C)°
110
100
90
80
60
50
70
IT(AV)
0.5
0.40.30.20.10
60°
dc
180°
120°
α
α = CONDUCTION
ANGLE
90°
α = 30°
Figure 6. Current Derating, 2.0 cm Square Pad Reference:
Ambient Temperature Figure 7. Current Derating Reference: Anode Tab
110
85
IT(AV)
0.50.40.30.20.10
50 OR 60 Hz HALFWAVE
T(tab)
, MAXIMUM ALLOWABLE
TAB TEMPERATURE ( C)°
60°
90°
180°
120°
α
α = CONDUCTION
ANGLE
dc
α = 30°
© 2020 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: BA.08/26/20
Thyristors
Surface Mount – 600V - 800V > MCR08B, MCR08M
MAXIMUM AVERAGE POWER
P
IT(AV)
1.0
0.5
0.30.20.10
0.9
0.8
0.7
0.5
0.4
0.3
0.2
0.1
0.4
0.6
dc
180°
α = 30°
60°
(AV),DISSI PATION (WATTS)
0
α
α = CONDUCTION
ANGLE
90°
120°
Figure 8. Power Dissipation Figure 9. Thermal Response Device Mounted on Figure 1
Printed Circuit Board
rT, TRANSIEN T THERMAL RESISTANCE
NORMALIZED
1.0
0.1
0.01 1000.10.0001
t, TIME (SECONDS)
0.0010 .011 .0 10
Figure 10. Typical Gate Trigger Voltage vs Junction Temperature
Figure 12. Typical Range of VGT versus Measured IGT
Figure 11. Typical Normalized Holding Current vs Junction
Temperature
Figure 13. Typical Gate Trigger Current vs Junction Temperature
VGT , GATE TRIGGER VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE, (ϒC)
0.7
0.6
0.5
0.4
8020-40- 20 04 06 0 110
0.3
VAK = 12 V
RL = 100
0.7
1000100.1
IGT, GATE TRIGGER CURRENT ( A)
0010.1
VGT, GATE TRIGGER VOLTAGE (VOLTS)
0.65
0.6
0.55
0.5
0.45
0.4
0.35
0.3
VAK = 12 V
RL = 100
TJ = 25ϒC
© 2020 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: BA.08/26/20
Thyristors
Surface Mount – 600V - 800V > MCR08B, MCR08M
HOLDING CURRENT (mA)I ,
H
100
1.0
0.1 10001.0
R
10 100 10,000 100,000
10 IGT = 48 A
TJ = 25ϒC
IGT = 7 A
Figure 14. Holding Current Range vs Gate-Cathode Resistance Figure 15. Exponential Static dv/dt vs. Junction Temperature
and Gate-Cathode Termination Resistance
STATIC dv/dt (V/ S)μ
10000
1000
100
10
1.0
0.1
10 100 1000 10,000 100,000
RGK
50°
75°
125°
5000
500
50
5.0
0.5
110°
TJ = 25°
Vpk
= 400 V
Figure 16. Exponential Static dv/dt vs Peak Voltage and
Gate-Cathode Termination Resistance
Figure 18. Exponential Static dv/dt vs Gate-Cathode
Termination Resistance and Product Trigger Current Sensitivity
Figure 17. Exponential Static dv/dt vs Gate-Cathode
Capacitance and Resistance
10000
100
10,00010 100 1000
1.0
RGK
STATIC dv/dt (V/ S)μ
500 V
100 V
1000
500 400 V
TJ = 110°C
50 V
50
10
5.0
200 V
300 V
STATIC dv/dt (V/ S)�
100 1000 10,000 100,00010
10000
100
1.0
1000
500
50
10
5.0
IGT = 5 A
IGT = 70 A
IGT = 35 A
IGT = 15 A
STATIC dv/dt (V/ S)μ
CGK
0.11 .0 10 1000.01
10000
100
1.0
1000
500
50
10
5.0
TJ = 110°C
400 V (PEAK)
RGK = 10 k
RGK = 100
RGK = 1.0 k
© 2020 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: BA.08/26/20
Thyristors
Surface Mount – 600V - 800V > MCR08B, MCR08M
Dimensions Soldering Footprint
Part Marking System
Dim Inches Millimeters
Min Nom Max Min Nom Max
A1.50 1.63 1.75 0.060 0.064 0.068
A1 0.02 0.06 0.10 0.001 0.002 0.004
b0.60 0.75 0.89 0.024 0.030 0.035
b1 2.90 3.06 3.20 0.115 0.121 0.126
c0.24 0.29 0.35 0.009 0.012 0.014
D6.30 6.50 6.70 0.249 0.256 0.263
E3.30 3.50 3.70 0.130 0.138 0.145
e2.20 2.30 2.40 0.087 0.091 0.094
e1 0.85 0.94 1.05 0.033 0.037 0.041
L1 1.50 1.75 2.00 0.060 0.069 0.078
HE6.70 7.00 7.30 0.264 0.276 0.287
90° − 10° 0° − 10°
Pin Assignment
1 Cathode
2 Anode
3 Gate
4 Anode
Ordering Information
Device Package Shipping
MCR08BT1G SOT-223
(Pb-Free) 1000/Tape & Reel
MCR08MT1G SOT-223
(Pb-Free) 1000/Tape & Reel
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are
not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at: www.littelfuse.com/disclaimer-electronics
A1
b1
D
E
b
e
e1
4
12 3
0.08 (0003 )
A
C
L1
HE
1. 5
0.059
mm
inches
SCALE 6:1
3. 8
0.15
2. 0
0.079
6. 3
0.248
2. 3
0.091
2. 3
0.091
2. 0
0.079
1
4
AYW
CR08x
SOT-223
Case 318E
Style 10
1
CR08c = Device Code
x = B or M
A = Assembly Location
Y = Year
W = Work Week
■ = Pb-Free Packaging
Note: Microdot may be in either location
1. Dimensions and Tolerancing per Ansi Y14.5M. 1982.
2. Controlling Dimension: Inch.
