SUD30N04-10 Vishay Siliconix N-Channel 40-V (D-S), 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (W) ID (A) 0.010 @ VGS = 10 V 30a 0.014 @ VGS = 4.5 V 30a D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested D TO-252 G Drain Connected to Tab G D S Top View S N-Channel MOSFET Order Number: SUD30N04-10 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Symbol Limit Drain-Source Voltage Parameter VDS 40 Gate-Source Voltage VGS 20 Continuous Drain Current (TJ = 175_C) TC = 25_C TC = 100_C Pulsed Drain Current V 30a ID 30a IDM Avalanche Current Unit A 120 IAR 50 Repetitive Avalanche Energyb L = 0.1 mH EAR 125 Power Dissipation TC = 25_C PD 97c W TJ, Tstg - 55 to 175 _C Operating Junction and Storage Temperature Range mJ THERMAL RESISTANCE RATINGS Parameter Symbol PCB Mountd J Junction-to-Ambient ti t A bi t Junction-to-Case Free Air RthJA RthJC Typical Maximum 45 55 110 125 1.5 1.8 Unit _C/W C/W Notes: a. Package limited. b. Duty cycle 1%. c. See SOA curve for voltage derating. d. Surface mounted on 1" FR4 board. Document Number: 70782 S-31724--Rev. D, 18-Aug-03 www.vishay.com 1 SUD30N04-10 Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max V(BR)DSS VGS = 0 V, ID = 250 mA 40 VGS(th) VDS = VGS, IDS = 250 mA 1 IGSS VDS = 0 V, VGS = 20 V 100 VDS = 40 V, VGS = 0 V 1 VDS = 40 V, VGS = 0 V, TJ = 125_C 50 VDS = 40 V, VGS = 0 V, TJ = 175_C 150 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage g Drain Current On-State Drain Currenta Drain Source On-State Drain-Source On State Resistancea Forward Transconductancea IDSS ID(on) rDS(on) DS( ) VDS = 5 V, VGS = 10 V 3 30 VGS = 10 V, ID = 30 A 0.085 0.010 0.014 0.017 VGS = 10 V, ID = 30 A, TJ = 175_C 0.0185 0.022 VGS = 4.5 V, ID = 10 A 0.0115 0.014 VGS = 4.5 V, ID = 10 A, TJ = 125_C 0.0195 0.024 VGS = 4.5 V, ID = 10 A, TJ = 175_C 0.025 0.031 VDS = 15 V, ID = 30 A 20 nA mA m A VGS = 10 V, ID = 30 A, TJ = 125_C gfs V 57 W S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reversen Transfer Capacitance Crss 160 Total Gate Chargec Qg 50 Gate-Source Chargec Qgs 9 Gate-Drain Chargec Qgd Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec 2700 VGS = 0 V, VDS = 25 V, f = 1 MHz VDS = 15 V,, VGS = 10 V,, ID = 30 A pF 100 nC 11 Rg 1 td(on) 3.6 14 30 tr VDD = 15 V, RL = 0.5 W 13 30 td(off) ID 30 A, VGEN = 10 V, RG = 2.5 W 45 90 25 50 tf Source-Drain Ciode Ratings and Characteristics (TC = Continuous Current 600 W ns 25_C)b Is 30 Pulsed Current ISM 120 Forward Voltagea VSD IF = 30 A, VGS = 0 V 0.90 1.50 V trr IF = 30 A, di/dt = 100 A/ms 50 100 ns Reverse Recovery Time A Notes: a. Pulse test; pulse width 300 ms, duty cycle 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 70782 S-31724--Rev. D, 18-Aug-03 SUD30N04-10 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 120 120 VGS = 10, 9, 8, 7, 6 V 5V 90 I D - Drain Current (A) I D - Drain Current (A) 90 60 4V 30 60 TC = 125_C 30 25_C 3V 0 0 2 4 6 8 10 0 VDS - Drain-to-Source Voltage (V) Transconductance 2 3 4 5 6 On-Resistance vs. Drain Current 0.030 TC = - 55_C 0.025 r DS(on) - On-Resistance ( ) 25_C 80 g fs - Transconductance (S) 1 VGS - Gate-to-Source Voltage (V) 100 125_C 60 40 20 0 0.020 0.015 VGS = 4.5 V VGS = 10 V 0.010 0.005 0.000 0 30 60 90 120 0 20 40 Capacitance Ciss 3200 2400 1600 Coss 800 80 100 40 50 Gate Charge 10 V GS - Gate-to-Source Voltage (V) 4000 60 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) C - Capacitance (pF) - 55_C 0 Crss 0 VGS = 15 V ID = 30 A 8 6 4 2 0 0 8 16 24 32 VDS - Drain-to-Source Voltage (V) Document Number: 70782 S-31724--Rev. D, 18-Aug-03 40 0 10 20 30 Qg - Total Gate Charge (nC) www.vishay.com 3 SUD30N04-10 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 100 Source-Drain Diode Forward Voltage VGS = 10 V ID = 30 A 2.0 TJ = 150_C I S - Source Current (A) r DS(on) - On-Resistance ( ) (Normalized) 2.5 1.5 1.0 0.5 0.0 - 50 - 25 0 25 50 75 100 125 150 TJ = 25_C 10 1 175 0.3 TJ - Junction Temperature (_C) 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Drain Current vs. Ambiemt Temperature Safe Operating Area 200 40 100 10 ms Limited by rDS(on) 100 ms I D - Drain Current (A) I D - Drain Current (A) 30 20 10 10 1 ms 10 ms 100 ms dc 1 TC = 25_C Single Pulse 0 0.1 0 25 50 75 100 125 150 175 0.1 1 10 50 VDS - Drain-to-Source Voltage (V) TA - Ambient Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 1 3 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 70782 S-31724--Rev. 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Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1