MIXA20W1200TMH Six-Pack XPT IGBT VCES = 1200 V IC25 = 28 A VCE(sat) = 1.8 V Part name (Marking on product) MIXA20W1200TMH P T1 T3 T5 D1 D5 D3 G1 G3 G5 NTC1 U V T2 NTC2 W T4 T6 D2 E 72873 D6 D4 Pin configuration see outlines. G2 G4 EU G6 EV EW Features: Application: Package: * High level of integration - only one power semiconductor module required for the whole drive * Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 sec. - very low gate charge - square RBSOA @ 3x IC - low EMI * Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) * Temperature sense included * SONICTM diode - fast and soft reverse recovery - low operating forward voltage * AC motor drives * Pumps, Fans * Washing machines * Air-conditioning system * Inverter and power supplies * "Mini" package * Assembly height is 17 mm * Insulated base plate * Pins suitable for wave soldering and PCB mounting * Assembly clips available - IXKU 5-505 screw clamp - IXRB 5-506 click clamp * UL registered E72873 IXYS reserves the right to change limits, test conditions and dimensions. (c) 2009 IXYS All rights reserved 20091127a 1-6 MIXA20W1200TMH IGBT T1 - T6 Ratings Symbol Definitions Conditions min. VCES collector emitter voltage VGES VGEM max. DC gate voltage max. transient collector gate voltage IC25 IC80 collector current Ptot total power dissipation VCE(sat) collector emitter saturation voltage IC = 16 A; VGE = 15 V VGE(th) gate emitter threshold voltage IC = 0.6 mA; VGE = VCE TVJ = 25C ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25C TVJ = 125C IGES gate emitter leakage current VGE = 20 V VCE = 600 V; VGE = 15 V; IC = 15 A typ. max. Unit 1200 V 20 30 V V TC = 25C TC = 80C 28 20 A A TC = 25C 100 W 2.1 V V TVJ = 25C continuous transient TVJ = 25C TVJ = 125C QG(on) total gate charge td(on) tr td(off) tf Eon Eoff turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse RBSOA reverse bias safe operating area VGE = 15 V; RG = 56 W; VCEK = 1200 V TVJ = 125C ISC (SCSOA) short circuit safe operating area VCE = 900 V; VGE = 15 V; TVJ = 125C RG = 56 W; tp = 10 s; non-repetitive RthJC RthCH thermal resistance junction to case thermal resistance case to heatsink (per IGBT) inductive load VCE = 600 V; IC = 15 A VGE = 15 V; RG = 56 W 1.8 2.1 5.4 5.9 6.5 V 0.1 mA mA 500 nA 0.1 TVJ = 125C 48 nC 70 40 250 100 1.55 1.7 ns ns ns ns mJ mJ 45 60 A A 1.26 0.42 K/W K/W Diode D1 - D6 Ratings Symbol Definitions Conditions VRRM max. repetitve reverse voltage IF25 IF80 forward current VF forward voltage IF = 20 A; VGE = 0 V Qrr IRM trr Erec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy VR = 600 V diF /dt = -400 A/s IF = 20 A; VGE = 0 V RthJC RthCH thermal resistance junction to case thermal resistance case to heatsink typ. max. Unit TVJ = 25C 1200 V TC = 25C TC = 80C 33 22 A A 2.2 V V TVJ = 25C TVJ = 125C 1.95 1.95 TVJ = 125C 3 20 350 0.7 (per diode) IXYS reserves the right to change limits, test conditions and dimensions. (c) 2009 IXYS All rights reserved min. C A ns mJ 1.5 0.5 K/W K/W 20091127a 2-6 MIXA20W1200TMH Temperature Sensor NTC Symbol Definitions R25 B25/50 resistance Conditions min. TC = 25C 4.75 Ratings typ. max. 5.0 3375 5.25 Unit kW K 100000 10000 R [] 1000 100 10 0 25 50 75 100 125 150 TC [C] Typ. NTC resistance vs. temperature Module Symbol Definitions TVJ TVJM Tstg operating temperature max. virtual junction temperature storage temperature VISOL isolation voltage CTI comparative tracking index FC mounting force dS dA creep distance on surface strike distance through air Conditions Ratings typ. max. Unit 125 150 125 C C C 2500 V~ -40 -40 IISOL < 1 mA; 50/60 Hz Weight IXYS reserves the right to change limits, test conditions and dimensions. (c) 2009 IXYS All rights reserved min. 40 80 12.7 12 N mm mm 35 TC = 25C unless otherwise stated g 20091127a 3-6 MIXA20W1200TMH Circuit Diagram P T1 T3 T5 D1 D5 D3 G1 G3 G5 NTC1 U V T2 NTC2 W T4 T6 D2 G2 D6 D4 G4 EU G6 EV EW Outline Drawing Dimensions in mm (1 mm = 0.0394") Part number M I X A 20 W 1200 T MH Ordering Part Name Marking on Product Standard MIXA 20 W 1200 TMH MIXA20W1200TMH IXYS reserves the right to change limits, test conditions and dimensions. (c) 2009 IXYS All rights reserved = Module = IGBT = XPT = standard = Current Rating [A] = 6-Pack = Reverse Voltage [V] = NTC = MiniPack2 Delivering Mode Base Qty Ordering Code Box 20 508388 20091127a 4-6 MIXA20W1200TMH IGBT T1 - T6 30 IC [A] 30 VGE = 15 V 25 25 20 20 TVJ = 25C 15 IC TVJ = 125C 11 V TVJ = 125C 15 [A] 10 9V 10 5 0 13 V VGE = 15 V 17 V 19 V 5 0 1 2 0 3 VCE [V] Fig. 1 Typ. output characteristics 0 1 2 3 VCE [V] 4 5 Fig. 2 Typ. output characteristics 30 20 IC = 15 A VCE = 600 V 25 15 20 IC [A] VGE 15 10 [V] 10 5 0 5 TVJ = 125C TVJ = 25C 5 6 7 8 9 10 11 12 0 13 0 10 20 4 E Eon 2.4 Eoff E [mJ] [mJ] 1 5 10 60 15 20 25 30 35 IC [A] Fig. 5 Typ. switching energy vs. collector current 140 160 IXYS reserves the right to change limits, test conditions and dimensions. (c) 2009 IXYS All rights reserved IC = 15 A VCE = 600 V VGE = 15 V TVJ = 125C 2.0 1.6 0 50 2.8 RG = 56 VCE = 600 V VGE = 15 V TVJ = 125C 2 0 40 Fig. 4 Typ. turn-on gate charge Fig. 3 Typ. tranfer characteristics 3 30 QG [nC] VGE [V] 1.2 40 Eoff Eon 60 80 100 120 RG [] Fig. 6 Typ. switching energy vs. gate resistance 20091127a 5-6 MIXA20W1200TMH Diode T1 - T6 40 5 TVJ = 125C VR = 600 V 30 4 40 A IF Qrr 20 [A] 3 20 A [C] TVJ = 125C 10 2 TVJ = 25C 0 0.0 0.5 1.0 1.5 VF [V] 2.0 2.5 10 A 1 200 3.0 Fig. 7 Typ. Forward current versus VF 300 400 500 diF /dt [A/s] 600 700 Fig. 8 Typ. reverse recov.charge Qrr vs. di/dt 35 700 40 A TVJ = 125C 30 TVJ = 125C 600 VR = 600 V 20 A 25 VR = 600 V 500 10 A IRR 20 [A] 15 [ns] 300 10 200 5 100 trr 0 200 300 400 500 600 400 40 A 20 A 10 A 0 200 700 300 400 500 600 700 diF /dt [A/s] diF /dt [A/s] Fig. 9 Typ. peak reverse current IRM vs. di/dt Fig. 10 Typ. recovery time trr versus di/dt 1.4 10 TVJ = 125C VR = 600 V 1.2 Diode 1.0 1 40 A Erec IGBT ZthJC 0.8 20 A [mJ] IGBT [K/W] 0.6 Ri 0.1 0.4 300 400 500 600 700 diF /dt [A/s] Fig. 11 Typ. recovery energy Erec versus di/dt IXYS reserves the right to change limits, test conditions and dimensions. (c) 2009 IXYS All rights reserved Ri ti 1 0.252 0.0015 0.461 0.0015 10 A 0.2 200 FRD ti 0.01 0.001 0.01 2 0.209 0.03 0.291 0.03 3 0.541 0.03 0.423 0.03 4 0.258 0.08 0.326 0.08 0.1 1 10 tp [s] Fig. 12 Typ. transient thermal impedance 20091127a 6-6 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: IXYS: MIXA20W1200TMH MIXA20WB1200TML