© 2009 IXYS All rights reserved 1 - 6
20091127a
MIXA20W1200TMH
IXYS reserves the right to change limits, test conditions and dimensions.
Six-Pack
XPT IGBT
Pin configuration see outlines.
Features:
• High level of integration - only one
power semiconductor module required
for the whole drive
• Rugged XPT design
(Xtreme light Punch Through) results in:
- short circuit rated for 10 µsec.
- very low gate charge
- square RBSOA @ 3x IC
- low EMI
• Thin wafer technology combined with
the XPT design results in a competitive
low VCE(sat)
• Temperature sense included
• SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
Application:
• AC motor drives
• Pumps, Fans
• Washing machines
• Air-conditioning system
• Inverter and power supplies
Package:
• "Mini" package
• Assembly height is 17 mm
• Insulated base plate
• Pins suitable for wave soldering and
PCB mounting
• Assembly clips available
- IXKU 5-505 screw clamp
- IXRB 5-506 click clamp
• UL registered E72873
Part name (Marking on product)
MIXA20W1200TMH
E 72873
VCES = 1200 V
IC25 = 28 A
VCE(sat) = 1.8 V
G1 G3 G5
G2 G4 G6
U V W
NTC1
EU EV EW
NTC2
D1 D3 D5
D2 D4 D6
T1 T3 T5
T2 T4 T6
P
© 2009 IXYS All rights reserved 2 - 6
20091127a
MIXA20W1200TMH
IXYS reserves the right to change limits, test conditions and dimensions.
IGBT T1 - T6
Ratings
Symbol Definitions Conditions min. typ. max. Unit
VCES collector emitter voltage TVJ = 25°C 1200 V
VGES
VGEM
max. DC gate voltage
max. transient collector gate voltage
continuous
transient
±20
±30
V
V
IC25
IC80
collector current TC = 25°C
TC = 80°C
28
20
A
A
Ptot total power dissipation TC = 25°C 100 W
VCE(sat) collector emitter saturation voltage IC = 16 A; VGE = 15 V TVJ = 25°C
TVJ = 125°C
1.8
2.1
2.1 V
V
VGE(th) gate emitter threshold voltage IC = 0.6 mA; VGE = VCE TVJ = 25°C 5.4 5.9 6.5 V
ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25°C
TVJ = 125°C 0.1
0.1 mA
mA
IGES gate emitter leakage current VGE = ±20 V 500 nA
QG(on) total gate charge VCE = 600 V; VGE = 15 V; IC = 15 A 48 nC
td(on)
tr
td(off)
tf
Eon
Eoff
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
inductive load TVJ = 125°C
VCE = 600 V; IC = 15 A
VGE = ±15 V; RG = 56 W
70
40
250
100
1.55
1.7
ns
ns
ns
ns
mJ
mJ
RBSOA reverse bias safe operating area
V
GE
= ±15 V; R
G
= 56 W; V
CEK
= 1200 V
TVJ = 125°C
45 A
ISC
(SCSOA)
short circuit safe operating area VCE = 900 V; VGE = ±15 V; TVJ = 125°C
RG = 56 W; tp = 10 µs; non-repetitive
60 A
RthJC
RthCH
thermal resistance junction to case
thermal resistance case to heatsink
(per IGBT)
0.42
1.26 K/W
K/W
Diode D1 - D6
Ratings
Symbol Definitions Conditions min. typ. max. Unit
VRRM max. repetitve reverse voltage TVJ = 25°C 1200 V
IF25
IF80
forward current TC = 25°C
TC = 80°C
33
22
A
A
VFforward voltage IF = 20 A; VGE = 0 V TVJ = 25°C
TVJ = 125°C
1.95
1.95
2.2 V
V
Qrr
IRM
trr
Erec
reverse recovery charge
max. reverse recovery current
reverse recovery time
reverse recovery energy
VR = 600 V
diF /dt = -400 A/µs TVJ = 125°C
IF = 20 A; VGE = 0 V
3
20
350
0.7
µC
A
ns
mJ
RthJC
RthCH
thermal resistance junction to case
thermal resistance case to heatsink
(per diode)
0.5
1.5 K/W
K/W
© 2009 IXYS All rights reserved 3 - 6
20091127a
MIXA20W1200TMH
IXYS reserves the right to change limits, test conditions and dimensions.
Temperature Sensor NTC
Ratings
Symbol Definitions Conditions min. typ. max. Unit
R25
B25/50
resistance TC = 25°C 4.75 5.0
3375
5.25 kW
K
Module
Ratings
Symbol Definitions Conditions min. typ. max. Unit
TVJ
TVJM
Tstg
operating temperature
max. virtual junction temperature
storage temperature
-40
-40
125
150
125
°C
°C
°C
VISOL isolation voltage IISOL < 1 mA; 50/60 Hz 2500 V~
CTI comparative tracking index -
FCmounting force 40 80 N
dS
dA
creep distance on surface
strike distance through air
12.7
12
mm
mm
Weight 35 g
TC = 25°C unless otherwise stated
0 25 50 75 100 125 150
10
100
1000
10000
100000
R
[Ω]
Typ. NTC resistance vs. temperature
TC [°C]
© 2009 IXYS All rights reserved 4 - 6
20091127a
MIXA20W1200TMH
IXYS reserves the right to change limits, test conditions and dimensions.
Part number
M = Module
I = IGBT
X = XPT
A = standard
20 = Current Rating [A]
W = 6-Pack
1200 = Reverse Voltage [V]
T = NTC
MH = MiniPack2
Ordering Part Name Marking on Product Delivering Mode Base Qty Ordering Code
Standard MIXA 20 W 1200 TMH MIXA20W1200TMH Box 20 508388
Circuit Diagram
Outline Drawing Dimensions in mm (1 mm = 0.0394“)
G1 G3 G5
G2 G4 G6
U V W
NTC1
EU EV EW
NTC2
D1 D3 D5
D2 D4 D6
T1 T3 T5
T2 T4 T6
P
© 2009 IXYS All rights reserved 5 - 6
20091127a
MIXA20W1200TMH
IXYS reserves the right to change limits, test conditions and dimensions.
0 1 2 3
0
5
10
15
20
25
30
0 5 10 15 20 25 30 35
0
1
2
3
4
0 1 2 3 4 5
0
5
10
15
20
25
30
V
CE
[V]
I
C
[A]
Q
G
[nC]
V
GE
[V]
9 V
11 V
5 6 7 8 9 10 11 12 13
0
5
10
15
20
25
30
0 10 20 30 40 50 60
0
5
10
15
20
13 V
40 60 80 100 120 140 160
1.2
1.6
2.0
2.4
2.8
E
[mJ]
E
on
Fig. 1 Typ. output characteristics
V
CE
[V]
I
C
[A]
V
GE
= 15 V
17 V
19 V
Fig. 2 Typ. output characteristics
I
C
[A]
Fig. 3 Typ. tranfer characteristics
V
GE
[V]
Fig. 4 Typ. turn-on gate charge
Fig. 5 Typ. switching energy vs. collector current
E
off
Fig. 6 Typ. switching energy vs. gate resistance
R
G
[Ω]
E
[mJ]
I
C
[A]
R
G
= 56 Ω
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
E
on
E
off
I
C
= 15 A
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
I
C
= 15 A
V
CE
= 600 V
TVJ = 125°C
TVJ = 25°C
V
GE
= 15 V
T
VJ
= 125°C
T
VJ
= 125°C
T
VJ
= 25°C
IGBT T1 - T6
© 2009 IXYS All rights reserved 6 - 6
20091127a
MIXA20W1200TMH
IXYS reserves the right to change limits, test conditions and dimensions.
200 300 400 500 600 700
1
2
3
4
5
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
10
20
30
40
Q
rr
[µC]
I
F
[A]
V
F
[V] di
F
/dt [A/µs]
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125°C
V
R
= 600 V
10 A
20 A
40 A
Fig. 7 Typ. Forward current versus V
F
Fig. 8 Typ. reverse recov.charge Q
rr
vs. di/dt
200 300 400 500 600 700
0
5
10
15
20
25
30
35
I
RR
[A]
di
F
/dt [A/µs]
T
VJ
= 125°C
V
R
= 600 V
10 A
20 A
40 A
Fig. 9 Typ. peak reverse current I
RM
vs. di/dt
200 300 400 500 600 700
0
100
200
300
400
500
600
700
t
rr
[ns]
di
F
/dt [A/µs]
10 A
20 A
40 A
T
VJ
= 125°C
V
R
= 600 V
Fig. 10 Typ. recovery time t
rr
versus di/dt
Fig. 11 Typ. recovery energy E
rec
versus di/dt
200 300 400 500 600 700
0.2
0.4
0.6
0.8
1.0
1.2
1.4
E
rec
[mJ]
di
F
/dt [A/µs]
T
VJ
= 125°C
V
R
= 600 V
10 A
20 A
40 A
0.001 0.01 0.1 1 10
0.01
0.1
1
10
t
p
[s]
Z
thJC
[K/W]
Fig. 12 Typ. transient thermal impedance
Diode
IGBT
Diode T1 - T6
IGBT FRD
RitiRiti
1 0.252 0.0015 0.461 0.0015
2 0.209 0.03 0.291 0.03
3 0.541 0.03 0.423 0.03
4 0.258 0.08 0.326 0.08
