© Semiconductor Components Industries, LLC, 2012
April, 2012 − Rev. 14
1Publication Order Number:
MJ15003/D
MJ15003 (NPN),
MJ15004 (PNP)
Complementary Silicon
Power Transistors
The MJ15003 and MJ15004 are PowerBaset power transistors
designed for high power audio, disk head positioners and other linear
applications.
Features
•High Safe Operating Area (100% Tested) − 5.0 A @ 50 V
•For Low Distortion Complementary Designs
•High DC Current Gain − hFE = 25 (Min) @ IC = 5 Adc
•Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO 140 Vdc
Collector−Base Voltage VCBO 140 Vdc
Emitter−Base Voltage VEBO 5 Vdc
Collector Current − Continuous IC20 Adc
Base Current − Continuous IB5 Adc
Emitter Current − Continuous IE25 Adc
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD250
1.43
W
W/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg –65 to +200 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case RqJC 0.70 °C/W
Maximum Lead Temperature for Soldering
Purposes 1/16″ from Case for v 10 secs
TL265 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
20 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
140 VOLTS, 250 WATTS
Device Package Shipping
ORDERING INFORMATION
MJ15003 TO−204AA 100 Units/Tray
TO−204AA
MJ15004
TO−204AA
(Pb−Free)
MJ15004G
MJ15003G TO−204AA
(Pb−Free)
100 Units/Tray
100 Units/Tray
100 Units/Tray
TO−204AA (TO−3)
CASE 1−07
STYLE 1
MARKING DIAGRAM
MJ1500x = Device Code
x = 3 or 4
G= Pb−Free Package
A = Location Code
YY = Year
WW = Work Week
MEX = Country of Orgin
MJ1500xG
AYYWW
MEX
MJ15003 (NPN), MJ15004 (PNP)
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector Emitter Sustaining Voltage (Note 1)
(IC = 200 mAdc, IB = 0)
VCEO(sus) 140 −Vdc
Collector Cutoff Current
(VCE = 140 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 140 Vdc, VBE(off) = 1.5 Vdc, TC = 150°C)
ICEX
−
−100
2
mAdc
mAdc
Collector Cutoff Current
(VCE = 140 Vdc, IB = 0)
ICEO −250 mAdc
Emitter Cutoff Current
(VEB = 5 Vdc, IC = 0)
IEBO −100 mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(VCE = 50 Vdc, t = 1 s (non repetitive))
(VCE = 100 Vdc, t = 1 s (non repetitive))
IS/b
5.0
1.0
−
−
Adc
ON CHARACTERISTICS
DC Current Gain
(IC = 5 Adc, VCE = 2 Vdc)
hFE 25 150 −
Collector Emitter Saturation Voltage
(IC = 5 Adc, IB = 0.5 Adc)
VCE(sat) −1.0 Vdc
Base Emitter On Voltage
(IC = 5 Adc, VCE = 2 Vdc)
VBE(on) −2.0 Vdc
DYNAMIC CHARACTERISTICS
Current Gain — Bandwidth Product
(IC = 0.5 Adc, VCE = 10 Vdc, ftest = 0.5 MHz)
fT2.0 −MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
cob −1000 pF
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2%.
TYPICAL CHARACTERISTICS MJ15003G (NPN)
Figure 1. DC Current Gain Figure 2. Collector−Emitter Saturation Voltage
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
1001010.1
10
100
1001010.1
0
0.1
0.2
0.3
0.4
0.5
0.7
0.8
hFE, DC CURRENT GAIN
VCE(sat), COLL−EMIT SATURATION
VOLTAGE (V)
150°C
−55°C
25°C
VCE = 2 V
0.6
150°C
−55°C
25°C
IC/IB = 10
MJ15003 (NPN), MJ15004 (PNP)
http://onsemi.com
3
TYPICAL CHARACTERISTICS MJ15003G (NPN)
Figure 3. Base−Emitter Saturation Voltage Figure 4. Safe Operating Area
IC, COLLECTOR CURRENT (A) VCE, COLLECTOR EMITTER VOLTAGE (V)
1001010.1
0
0.2
0.4
0.6
0.8
1.0
1.4
1.6
1,000100101
0.1
1
10
100
VBE(sat), BASE−EMIT SATURATION
VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
1.2
150°C
−55°C
25°C
IC/IB = 10
100 mSec
1.0 Sec
TYPICAL CHARACTERISTICS MJ15004G (PNP)
Figure 5. DC Current Gain Figure 6. Collector−Emitter Saturation Voltage
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
1001010.1
1
10
100
1,000
1001010.1
0
0.1
0.2
0.4
0.6
0.7
0.8
1.0
Figure 7. Base−Emitter Saturation Voltage Figure 8. Safe Operating Area
IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (V)
1010.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1,000100101
0.1
1
10
100
hFE, DC CURRENT GAIN
VCE(sat), COLL−EMIT SATURATION
VOLTAGE (V)
VBE(sat), BASE−EMIT SATURATION
VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
150°C
−55°C
25°C
VCE = 2 V
0.3
0.5
0.9
150°C
−55°C
25°C
IC/IB = 10
150°C
−55°C
25°C
IC/IB = 10
100 mSec
1.0 Sec
MJ15003 (NPN), MJ15004 (PNP)
http://onsemi.com
4
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A1.550 REF 39.37 REF
B--- 1.050 --- 26.67
C0.250 0.335 6.35 8.51
D0.038 0.043 0.97 1.09
E0.055 0.070 1.40 1.77
G0.430 BSC 10.92 BSC
H0.215 BSC 5.46 BSC
K0.440 0.480 11.18 12.19
L0.665 BSC 16.89 BSC
N--- 0.830 --- 21.08
Q0.151 0.165 3.84 4.19
U1.187 BSC 30.15 BSC
V0.131 0.188 3.33 4.77
A
N
E
C
K
−T−SEATING
PLANE
2 PL
D
M
Q
M
0.13 (0.005) Y M
T
M
Y
M
0.13 (0.005) T
−Q−
−Y−
2
1
U
L
GB
V
H
TO−204 (TO−3)
CASE 1−07
ISSUE Z
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
MJ15003/D
PowerBase is a trademark of Semiconductor Components Industries, LLC.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
