
Features
• General Purpose Switching and Amplification
2SC1008-O
NPN Silicon
Epitaxial Transistor
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage*
(I
C=10mAdc, IB=0)
60 Vdc
V(BR)CBO Collector-Base Breakdown Voltage
(I
C=100uAdc, IE=0) 80 Vdc
ICBO Collector Cutoff Current
(VCB=60Vdc, I
E=0Adc)
0.1 uAdc
IEBO Emitter Cutoff Current
(VEB=5.0Vdc, I
C=0Adc)
0.1 uAdc
ON CHARACTERISTICS
hFE
DC Current Gain*
(I
C=50mAdc, VCE=2.0Vdc) 40 400
VCE(sat) Collector-Emitter Saturation Voltage
(I
C=500mAdc, IB=50mAdc) 0.4 Vdc
VBE(sat) Base-Emitter Saturation Voltage
(I
C=500mAdc, IB=50mAdc) 1.1 Vdc
SMALL-SIGNAL CHARACTERISTICS
fTTransistor Frequency
(IC=50mAdc, VCE=10Vdc) 30 MHz
CLASSIFICATION OF HFE (1)
Rank R O Y G
Range 40-80 70-140 120-240 200-400
Cob Collector Output Capacitance
(VCB=10Vdc,IC=0,f=1MHz)
Typ 8 pF
Revision: C 2013/01/01
omponents
20736 Marilla Street Chatsworth
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MCC TM
Micro Commercial Components
www.mccsemi.com
1 of 2
2SC1008-Y
2SC1008-G
2SC1008-R
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
• Capable of 0.8Watts of Power Dissipation.
• Collector-current 0.7A
• Collector-base Voltage 80V
• Marking : C1008
V(BR)EBO
Emitter-Base Breakdown Voltage
(I
E=10uAdc, IC=0) 8 Vdc
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .175 .185 4.45 4.70
B .175 .185 4.45 4.70
C .500 --- 12.70 ---
D .016 .020 0.41 0.63
E .135 .145 3.43 3.68
.095.1052.422.67 Straight Lead
AE
B
C
D
G
EBC
EBC
BENT LEADSTRAIGHT LEAD
BULK PACK AMMO PACK
* For ammo packing detailed specification, click here to visit our website
of product packaging for details.
.173.2204.405.60 Bent Lead
G
TO-92
DIMENSIONS
Halogen free available upon request by adding suffix "-HF"
•