BFP136W
Jun-22-20011
NPN Silicon RF Transistor
For power amplifier in DECT and PCN systems
fT = 5.5GHz
Gold metalization for high reliability
VPS05605
4
2
1
3
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFP136W PAs 1 = E 2 = C 3 = E 4 = B SOT343
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 12 V
Collector-emitter voltage VCES 20
Collector-base voltage VCBO 20
Emitter-base voltage VEBO 2
Collector current IC150 mA
Base current IB20
Total power dissipation
TS
60°C 1) Ptot 1000 mW
Junction temperature Tj150 °C
Ambient temperature TA-65 ... 150
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Junction - soldering point2) RthJS
90 K/W
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note Thermal Resistance
BFP136W
Jun-22-20012
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Values UnitSymbol
min. max.typ.
DC characteristics
V
V(BR)CEO
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0 12 --
µACollector-emitter cutoff current
VCE = 20 V, VBE = 0 - 100-
ICES
Collector-base cutoff current
VCB = 10 V, IE = 0 ICBO - - 50 nA
Emitter-base cutoff current
VEB = 1 V, IC = 0 IEBO - - 1 µA
DC current gain
IC = 80 mA, VCE = 5 V hFE 50 100 200 -
BFP136W
Jun-22-20013
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
AC characteristics (verified by random sampling)
Transition frequency
IC = 80 mA, VCE = 5 V, f = 500 MHz fT4 5.5 - GHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz Ccb - 1.7 2.5 pF
Collector-emitter capacitance
VCE = 10 V, f = 1 MHz Cce - 0.7 -
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz Ceb - 6.8 -
Noise figure
IC = 30 mA, VCE = 5 V, ZS = ZSopt ,
f = 900 MHz
f = 1.8 GHz
F
-
-
2
3.3
-
-
dB
Power gain, maximum available 1)
IC = 80 mA, VCE = 5 V, ZS = ZSopt, ZL = ZLopt ,
f = 900 MHz
f = 1.8 GHz
Gma
-
-
15.5
9.5
-
-
Transducer gain
IC = 80 mA, VCE = 5 V, ZS = ZL = 50
,
f = 900 MHz
f = 1.8 GHz
|S21e|2
-
-
9
3
-
-
Third order intercept point
IC = 80 mA, VCE = 5 V, ZS = ZSopt, ZL = ZLopt ,
f = 1.8 GHz
IP3- 33 - dBm
1Gma = |S21 / S12| (k-(k2-1)1/2)
BFP136W
Jun-22-20014
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :
Transistor Chip Data
BF = 113.32 -
IKF = 1.4907 A
BR = -86.717
IKR = 0.033605 A
RB = 0
RE = 0.22081
VJE = 0.71518 V
XTF = 0.31338 -
PTF = 0 deg
MJC = 0.31461 -
CJS = 0fF
XTB = 0-
FC = 0.99886 -
IS = 1.5813 fA
VAF = 12.331 V
NE = 1.4254 -
VAR = V31.901
NC = 1.8821 -
RBM =
1.0078
CJE = 33.904 fF
TF = ps20.691
ITF = 4.5579 mA
VJC = 1.1381 V
TR = ns1.0033
MJS = 0-
XTI = 3 -
NF = 1.0653 -
ISE = 46.37 fA
NR = 1.8047 -
ISC = 0.0080864 fA
IRB = 0.83992 mA
RC = 0.01636
MJE = 0.36824 -
VTF = 0.10174 V
CJC = 2977.4 fF
XCJC = 0.02899 -
VJS = 0.75 V
EG = 1.11 eV
TNOM 300 K
All parameters are ready to use, no scalling is necessary.
Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil-und Satellitentechnik (IMST)
Package Equivalent Circuit:
LBI = 0.5 nH
LBO = 0.51 nH
LEI = 0.18 nH
LEO = 0.14 nH
LCI = 0.05 nH
LCO = 0.35 nH
CBE = 78 fF
CCB = 48 fF
CCE = 244 fF
Valid up to 6GHz
For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales
office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/products/discrete/index.htm
BFP136W
Jun-22-20015
Total power dissipation Ptot = f (TS)
0 20 40 60 80 100 120 °C 150
TS
0
100
200
300
400
500
600
700
800
900
1000
mW
1200
P
tot
Permissible Pulse Load RthJS = f (tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
Ptotmax/PtotDC = f (tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
-
P
totmax
/ P
totDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
BFP136W
Jun-22-20016
Collector-base capacitance Ccb = f (VCB)
f = 1MHz
0 2 4 6 8 V11
VCB
0.0
0.5
1.0
1.5
2.0
pF
3.0
C
cb
Transition frequency fT = f (IC)
VCE = Parameter
0 20 40 60 80 100 120 140mA 170
IC
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
GHz
7.0
f
T
8V 5V
3V
2V
1V
0.7V
Power Gain Gma, Gms = f(IC)
f = 0.9GHz
VCE = Parameter
0 20 40 60 80 100 120 140mA 170
IC
0
2
4
6
8
10
12
14
dB
18
G
10V 3V
2V
1V
0.7V
Power Gain Gma, Gms = f(IC)
f = 1.8GHz
VCE = Parameter
0 20 40 60 80 100 120 140mA 170
IC
0
1
2
3
4
5
6
7
8
9
10
dB
12
G
10V
3V
2V
1V
0.7V
BFP136W
Jun-22-20017
Intermodulation Intercept Point IP3=f(IC)
(3rd order, Output, ZS=ZL=50
)
VCE = Parameter, f = 900MHz
0 20 40 60 80 100 120 mA 160
IC
10
15
20
25
30
dBm
40
IP
3
8V
5V
3V
2V
1V
Power Gain Gma, Gms = f(VCE):_____
|S21|2 = f(VCE):---------
f = Parameter
02468V12
VCE
0
2
4
6
8
10
12
14
dB
18
G
0.9GHz
0.9GHz
1.8GHz
IC=80mA
Power Gain |S21|2= f(f)
VCE = Parameter
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
-8
-4
0
4
8
12
16
20
24
dB
30
G
10V
2V
1V
0.7V
IC=80mA
Power Gain Gma, Gms = f(f)
VCE = Parameter
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
0
4
8
12
16
20
24
28
dB
34
G
10V
1V
0.7V
IC=80mA
