Data Sheet Switching Diode DAP222M Dimensions (Unit : mm) Applications Ultra high speed switching Land size figure (Unit : mm) 0.8 0.45 1.20.1 0.130.05 0.320.05 Features 1) Ultra small mold type. (VMD3) 2) High reliability. 1.15 0.5 (3) (1) 0.4 00.1 0.4 (2) VMD3 0.220.05 0.220.05 Construction Silicon epitaxial planar 0.45 1.20.1 0.80.1 0.4 0.50.05 0.4 Structure ROHM : VMD3 dot (year week factory) Taping specifications (Unit : mm) 0.30.1 2.00.04 1.550.05 0.50.05 (4.00.1) 1.30.05 0 Absolute maximum ratings (Ta=25C) Parameter Symbol Reverse voltage (repetitive peak) VRM VR Reverse voltage (DC) IFM Forward voltage (Single) Average rectified forward current (Single) Io Isurge Surge current (t=1us) Power dissipation Pd Junction temperature Tj Storage temperature Tstg Electrical characteristics (Ta=25C) Parameter Symbol VF Forward voltage Limits 2.00.05 8.00.1 5.50.2 00.1 1.350.05 0 3.50.05 1.750.07 4.00.07 0.60.05 0 Unit V V mA mA A mW C C 80 80 300 100 4 150 150 55 to 150 Min. Typ. Max. Unit Conditions IF=100mA - - 1.2 V Reverse current IR - - 0.1 A VR=70V Capacitance between terminals Reverse recovery time Ct - - 3.5 pF trr - - 4 ns VR=6V , f=1MHz VR=6V , IF=5mA , RL=50 www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 1/2 2011.06 - Rev.B Data Sheet DAP222M 10000 Ta=125 10 Ta=25 Ta=150 Ta=-25 1 0 100 200 300 400 500 600 700 800 Ta=75 100 10 Ta=25 1 Ta=-25 0.1 0.01 0 900 1000 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 20 30 40 50 60 70 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 80 0.1 0 890 880 870 860 AVE:870.1mV 850 80 60 50 40 30 AVE:4.310nA 20 8 7 6 5 4 3 2 10 1 0 0 Ct DISPERSION MAP 5 8.3ms 10 AVE:2.50A 0 Ta=25 VR=6V IF=5mA RL=50 n=10pcs 9 8 7 6 PEAK SURGE FORWARD CURRENT:IFSM(A) REVERSE RECOVERY TIME:trr(ns) 1cyc Ifsm 5 AVE:1.81pF IR DISPERSION MAP 10 15 5 4 3 2 1 Ifsm 4 8.3ms 8.3ms 1cyc 3 2 1 AVE:1.93ns 0 0 1 IFSM DISRESION MAP trr DISPERSION MAP 1000 t 10 1 0.1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 100 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 10 Rth(j-a) 9 ELECTROSTATIC DDISCHARGE TEST ESD(KV) Ifsm TRANSIENT THAERMAL IMPEDANCE:Rth (/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 100 20 Ta=25 VR=6V f=1MHz n=10pcs 9 70 VF DISPERSION MAP 20 5 10 15 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 10 Ta=25 VR=70V n=10pcs 90 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25 IF=100mA n=30pcs REVERSE CURRENT:IR(nA) FORWARD VOLTAGE:VF(mV) 10 1 100 900 PEAK SURGE FORWARD CURRENT:IFSM(A) f=1MHz 1000 0.001 0.1 10 Ta=150 Ta=125 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=75 REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(mA) 100 Rth(j-c) 100 Mounted on epoxy board IM=10mA 1ms IF=100mA time 300us 10 0.001 8 7 6 5 3 0.1 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 2/2 AVE:1.47kV 2 1 0 0.01 AVE:2.98kV 4 C=200pF R=0 C=100pF R=1.5k 1000 ESD DISPERSION MAP 2011.06 - Rev.B Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. R1120A