© 2006 IXYS All rights reserved DS99341E(03/06)
PolarHVTM HiPerFET
Power MOSFET VDSS = 600 V
ID25 =15 A
RDS(on) ≤≤
≤≤
≤250 mΩΩ
ΩΩ
Ω
trr ≤≤
≤≤
≤250 ns
N-Channel Enhancement Mode
Fast Recovery Diode
Avalanche Rated
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0 V, ID = 250 μA 600 V
VGS(th) VDS = VGS, ID = 4 mA 3.0 5.0 V
IGSS VGS = ±30 V, VDS = 0 ±100 nA
IDSS VDS = VDSS 25 μA
VGS = 0 V TJ = 125°C 500 μA
RDS(on) VGS = 10 V, ID = 15 A 250 mΩ
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 600 V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ600 V
VGSS Continuous ±30 V
VGSM Transient ±40 V
ID25 TC= 25°C15A
IDM TC= 25°C, pulse width limited by TJM 80 A
IAR TC= 25°C30A
EAR TC= 25°C50mJ
EAS TC= 25°C 1.5 J
dv/dt IS≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ V DSS, 10 V/ns
TJ≤ 150°C, RG = 3 Ω
PDTC= 25°C 166 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.062 in.) from case for 10 s 300 °C
VISOL 50/60 Hz, RMS, t = 1minute, leads-to-tab 2500 V~
FCMounting Force (IXFC) 11..65 / 2.5..15 N/lb
(IXFR) 20..120 / 4.5..25 N/lb
Weight ISOPLUS220 2 g
ISOPLUS247 5 g
IXFC 30N60P
IXFR 30N60P
Electrically Isolated Back Surface
G = Gate D = Drain
S = Source
Features
zSilicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
zLow drain to tab capacitance(<30pF)
Applications
zDC-DC converters
zBattery chargers
zSwitched-mode and resonant-mode
power supplies
zDC choppers
zAC motor control
Advantages
zEasy assembly
zSpace savings
zHigh power density
Isolated back surface
ISOPLUS220TM (IXFC)
E153432
GDS
ISOPLUS247TM (IXFR)
E153432
Isolated back surface
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFC 30N60P
IXFR 30N60P
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ. Max.
gfs VDS = 20 V; ID = 15 A, pulse test 15 27 S
Ciss 3820 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 360 pF
Crss 28 pF
td(on) 22 ns
trVGS = 10 V, VDS = VDSS , ID = 15 A 20 ns
td(off) RG= 3 Ω (External) 75 ns
tf25 ns
Qg(on) 85 nC
Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 15 A 26 nC
Qgd 28 nC
RthJC 0.75 °C/W
RthCS 0.21 °C/W
Source-Drain Diode Characteristic Values
(TJ = 25°C unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
ISVGS = 0 V 30 A
ISM Repetitive 80 A
VSD IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
trr IF = 25A, -di/dt = 100 A/μs 200 ns
IRM VR = 100 V; VGS = 0 V 8 A
QRM 0.6 μC
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
ISOPLUS220 (IXFC) Outline
IXYS CO 0177 R0
Note:
Bottom heatsink (Pin 4) is
electrically isolated from Pin
1,2, or 3.
ISOPLUS247 (IXFR) Outline
© 2006 IXYS All rights reserved
IXFC 30N60P
IXFR 30N60P
Fig. 6. Dr ain Curr ent vs. Case
Temperature
0
2
4
6
8
10
12
14
16
-50 -25 0 25 50 75 100 125 150
TC - Deg ree s Cen tigrade
I D - Amperes
Fig . 2. Extended Output Characteristics
@ 25
º
C
0
5
10
15
20
25
30
35
40
45
50
55
60
0 3 6 9 12 15 18 21 24 27 30
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7V
5V
6.5V
6V
5.5V
Fig. 3 . Out put Characteristics
@ 125
º
C
0
3
6
9
12
15
18
21
24
27
30
0 2 4 6 8 10 12 14 16 18
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
7V
5.5V
5V
4.5V
6V
Fig. 1. Output Characteristics
@ 25
º
C
0
3
6
9
12
15
18
21
24
27
30
012345678
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7V
5.5V
5V
6.5V
6V
Fig. 4. R
DS(on
)
Norma lized to I
D
= 15A
Value vs. Ju nction Temperature
0.4
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
3.1
3.4
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Ce ntigr ad e
R
D S ( o n )
- N orm alize d
I
D
= 30A
I
D
= 15 A
V
GS
= 10V
Fi g. 5. R
DS(on)
Norma lized to
I
D
= 15A Value vs. Drain Current
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
0 5 10 15 20 25 30 35 40 45 50 55 60
I
D
- Amperes
R
D S ( o n )
- N ormali zed
T
J
= 125
º
C
T
J
= 25
º
C
V
GS
= 10V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFC 30N60P
IXFR 30N60P
Fig. 12. Maximum Tr ansien t T hermal
Resistance
0.01
0.10
1.00
0.1 1 10 100 1000
Pulse Width - millis econds
R ( t h ) J C - ºC / W
Fig. 11. Capacitance
10
100
1000
10000
0 5 10 15 20 25 30 35 40
V
D S
- Volts
Capacitance - picoFarads
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 102030405060708090
Q
G
- nanoCoulombs
V
G S
- Vol ts
V
DS
= 300V
I
D
= 15A
I
G
= 10mA
Fig. 7. Input Admittance
0
5
10
15
20
25
30
35
3.5 4 4.5 5 5.5 6 6.5 7
V
G S
- Volts
I
D
- Am peres
T
J
= 125
º
C
25
º
C
-40
º
C
Fig. 8. Trans conductance
0
5
10
15
20
25
30
35
40
45
50
0 5 10 15 20 25 30 35 40
I
D
- Amper es
g
f s
- Siem ens
T
J
= -40
º
C
25
º
C
125
º
C
Fig. 9. Source C urrent vs.
Sour ce -To-Drain Voltage
0
10
20
30
40
50
60
70
80
90
0.4 0.5 0.6 0.7 0.8 0.9 1 1.1
V
S D
- Volts
I
S
- Am pere s
T
J
= 12 5
º
C
T
J
= 25
º
C
