DE275-501N16A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C; RGS = 1 M 500 V VGS Continuous 20 V VGSM Transient 30 V ID25 Tc = 25C 16 A IDM Tc = 25C, pulse width limited by TJM 96 A IAR Tc = 25C 16 A EAR Tc = 25C 20 mJ 5 V/ns dv/dt IS IDM, di/dt 100A/s, VDD VDSS, Tj 150C, RG = 0.2 >200 V/ns 590 W 284 W 3.0 W RthJC 0.25 C/W RthJHS 0.53 C/W PDC Tc = 25C Derate 1.9W/C above 25C PDAMB Tc = 25C Symbol Test Conditions SG1 VDSS VGS = 0 V, ID = 3 ma 500 VGS(th) VDS = VGS, ID = 4 ma 2.5 IGSS VGS = 20 VDC, VDS = 0 IDSS VDS = 0.8 VDSS TJ = 25C VGS = 0 TJ = 125C Weight V 5.5 V 100 nA 50 1 A mA 10 VDS = 15 V, ID = 0.5ID25, pulse test -55 +175 -55 1.6mm(0.063 in) from case for 10 s S 175 Tstg = 16 A RDS(on) = 0.4 PDC = 590 W C C +175 SG2 SD1 SD2 * Isolated Substrate - high isolation voltage (>2500V) - excellent thermal transfer - Increased temperature and power max. .38 TJM TL typ. VGS = 15 V, ID = 0.5ID25 Pulse test, t 300S, duty cycle d 2% TJ ID25 Features Characteristic Values min. gfs 500 V DRAIN TJ = 25C unless otherwise specified RDS(on) = GATE IS = 0 PDHS VDSS C 300 C 2 g * * - - * * * cycling capability IXYS advanced low Qg process Low gate charge and capacitances easier to drive faster switching Low RDS(on) Very low insertion inductance (<2nH) No beryllium oxide (BeO) or other hazardous materials Advantages * Optimized for RF and high speed switching at frequencies to 100MHz * Easy to mount--no insulators needed * High power density DE275-501N16A RF Power MOSFET Symbol Test Conditions Characteristic Values (TJ = 25C unless otherwise specified) min. typ. max. RG 0.3 Ciss 1800 pF 150 pF 40 pF 21 pF 3 ns 2 ns 4 ns 5 ns 50 nC 20 nC 30 nC Coss VGS = 0 V, VDS = 0.8 VDSS(max), f = 1 MHz Crss Cstray Back Metal to any Pin Td(on) Ton Td(off) VGS = 15 V, VDS = 0.8 VDSS ID = 0.5 IDM RG = 0.2 (External) Toff Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS ID = 0.5 ID25 Qgd Source-Drain Diode Characteristic Values (TJ = 25C unless otherwise specified) Symbol Test Conditions min. IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle 2% Trr QRM IF = IS, -di/dt = 100A/s, VR = 100V typ. max. 6 A 98 A 1.5 V 200 ns 0.6 C 4 A IRM For detailed device mounting and installation instructions, see the "DESeries MOSFET Mounting Instructions" technical note on IXYS RF's web site at www.ixysrf.com/Technical_Support/App_notes.html IXYS RF reserves the right to change limits, test conditions and dimensions. IXYS RF MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,891,686 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 5,640,045 DE275-501N16A RF Power MOSFET 10000 Ciss Coss Capacitance in pF Crss 1000 100 10 0 50 100 150 200 250 300 350 Vd s i n Vo l t s 275-501N16A Capacitances vs Vds 400 450 500 DE275-501N16A RF Power MOSFET 501N16A DE-SERIES SPICE Model The DE-SERIES SPICE Model is illustrated in Figure 1. The model is an expansion of the SPICE level 3 MOSFET model. It includes the stray inductive terms LG, LS and LD. Rd is the RDS(ON) of the device, Rds is the resistive leakage term. The output capacitance, COSS, and reverse transfer capacitance, CRSS are modeled with reversed biased diodes. This provides a varactor type response necessary for a high power device model. The turn on delay and the turn off delay are adjusted via Ron and Roff. 10 DRAIN Ld 4 Lg Doff Roff D1crs Rd D2crs 20 GATE 6 8 1 5 Don 2 M3 Dcos Rds 3 Ron 7 Ls 30 SOURCE Figure 1 DE-SERIES SPICE Model This SPICE model may be downloaded as a text file from the DEI web site at www.directedenergy.com/spice.htm Net List: SYM=POWMOSN .SUBCKT 501N16A 10 20 30 * TERMINALS: D G S * 500 Volt 16 Amp .38 ohm N-Channel Power MOSFET * REVA 6-15-00 M1 1 2 3 3 DMOS L=1U W=1U RON 5 6 .2 DON 6 2 D1 ROF 5 7 .2 DOF 2 7 D1 D1CRS 2 8 D2 D2CRS 1 8 D2 CGS 2 3 2.0N RD 4 1 .38 DCOS 3 1 D3 RDS 1 3 5.0MEG LS 3 30 .5N LD 10 4 1N LG 20 5 1N .MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=5.8) .MODEL D1 D (IS=.5F CJO=10P BV=100 M=.5 VJ=.7 TT=1N RS=10M) .MODEL D2 D (IS=.5F CJO=450P BV=500 M=.4 VJ=.6 TT=10N RS=10M) .MODEL D3 D (IS=.5F CJO=900P BV=500 M=.3 VJ=.3 TT=400N RS=10M) .ENDS Doc #9200-0222 Rev 3 (c) 2003 IXYS RF An IXYS Company 2401 Research Blvd., Suite 108 Fort Collins, CO USA 80526 970-493-1901 Fax: 970-493-1903 Email: deiinfo@directedenergy.com Web: http://www.directedenergy.com