MMBFJ111 MMBFJ112 MMBFJ113 J111 J112 J113 G D G S TO-92 SOT-23 D S Mark: 6P / 6R / 6S N-Channel Switch This device is designed for low level analog switching, sample and hold circuits and chopper stabalized amplifiers. Sourced from Process 51. Absolute Maximum Ratings* Symbol TA = 25C unless otherwise noted Parameter Value Units 35 V VDG Drain-Gate Voltage VGS Gate-Source Voltage - 35 V IGF Forward Gate Current 50 mA TJ ,Tstg Operating and Storage Junction Temperature Range -55 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25C unless otherwise noted Characteristic RJC Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case RJA Thermal Resistance, Junction to Ambient *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." Max Units J111- J113 350 2.8 125 *MMBFJ111 225 1.8 357 556 mW mW/C C/W C/W J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 N Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25C unless otherwise noted Parameter Test Conditions Min Max Units - 1.0 nA - 10 - 5.0 - 3.0 1.0 V V V nA 30 50 100 mA mA mA OFF CHARACTERISTICS V(BR)GSS Gate-Source Breakdown Voltage IG = - 1.0 A, VDS = 0 IGSS Gate Reverse Current VGS = - 15 V, VDS = 0 VGS(off) Gate-Source Cutoff Voltage VDS = 5.0 V, ID = 1.0 A ID(off) Gate-Source Cutoff Voltage VDS = 5.0 V, VGS = - 10 V - 35 J111 J112 J113 - 3.0 - 1.0 - 0.5 J111 J112 J113 J111 J112 J113 20 5.0 2.0 V ON CHARACTERISTICS IDSS Zero-Gate Voltage Drain Current* VDS = 15 V, IGS = 0 rDS(on) Drain-Source On Resistance VDS 0.1 V, VGS = 0 SMALL-SIGNAL CHARACTERISTICS Cdg(on) Csg(on) Cdg(off) Drain Gate & Source Gate On Capacitance VDS = 0, VGS = 0, f = 1.0 MHz 28 pF Drain-Gate Off Capacitance VDS = 0, VGS = - 10 V, f = 1.0 MHz 5.0 pF Csg(off) Source-Gate Off Capacitance VDS = 0, VGS = - 10 V, f = 1.0 MHz 5.0 pF *Pulse Test: Pulse Width 300 s, Duty Cycle 3.0% Common Drain-Source - DRAIN CURRENT (mA) - 0.4 V 6 - 0.6 V 4 - 0.8 V - 1.0 V 2 - 1.4 V I D - 0.2 V 8 0 0 0.4 0.8 1.2 1.6 VDS- DRAIN-SOURCE VOLTAGE (V) - 1.2 V 2 100 r DS 50 50 g 20 20 fs I DSS , g fs @ V DS = 15V, V GS = 0 PULSED r DS @ 1.0 mA, V GS = 0 V GS(off) @ V DS = 15V, I D = 1.0 nA 10 I DSS _5 0.5 _ _ 2 5 VGS (OFF) - GATE CUTOFF VOLTAGE (V) 1 _ 10 _ 5 10 - DRAIN "ON" RESISTANCE ( ) V GS = 0 V Parameter Interactions 100 DS TA = 25C TYP V GS(off)= - 2.0 V r 10 g fs - TRANSCONDUCTANCE (mmhos) Typical Characteristics J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 N-Channel Switch (continued) Typical Characteristics (continued) Transfer Characteristics Transfer Characteristics 16 - DRAIN CURRENT (mA) VGS(off) = - 3.0 V - 55C 25C 125C 30 VGS(off) = - 2.0 V 125C 25C - 55C 20 V DS = 15 V 10 V DS = 15 V - 55C 25C 125C 12 8 VGS(off) = - 1.1 V 125C 25C - 55C 4 I I 0 0 -1 -2 -3 VGS- GATE-SOURCE VOLTAGE (V) - TRANSCONDUCTANCE (mmhos) Transfer Characteristics 30 VGS(off) = - 3.0 V - 55C 25C 125C 20 VGS(off) = - 2.0 V - 55C 25C 125C 10 fs V DS = 15 V 0 0 -1 -2 VGS - GATE-SOURCE VOLTAGE (V) -3 g g fs - TRANSCONDUCTANCE (mmhos) 0 0 Transfer Characteristics V GS(off)= - 1.6 V - 55C 25C 125C 20 VGS(off) = - 1.1 V 10 - 55C 25C 125C V DS = 15 V 0 0 On Resistance vs Drain Current 125C V GS(off) 25C 20 125C V GS(off) - 55C TYP = - 7.0V 25C r DS @ V GS = 0 - 55C 10 1 2 5 10 20 I D - DRAIN CURRENT (mA) 50 -0.5 -1 -1.5 VGS - GATE-SOURCE VOLTAGE (V) Normalized Drain Resistance vs Bias Voltage TYP = - 2.0V 50 -0.5 -1 -1.5 VGS - GATE-SOURCE VOLTAGE (V) 30 100 r DS - NORMALIZED RESISTANCE ) r DS - DRAIN "ON" RESISTANCE( VGS(off) = - 1.6 V D D - DRAIN CURRENT (mA) 40 100 100 50 20 10 V GS(off) @ 5.0V, 10 A r DS r DS = V GS 1 -________ V GS(off) 5 2 1 0 0.2 0.4 0.6 0.8 1 VGS /V GS(off)- NORMALIZED GATE-SOURCE VOLTAGE (V) J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 N-Channel Switch (continued) (continued) T A = 25C V DG = 15V f = 1.0 kHz 10 V GS(off) = - 1.4V V GS(off) = - 3.0V 1 0.1 1 I D - DRAIN CURRENT (mA) 100 T A = 25C 10 10 e n - NOISE VOLTAGE (nV / Hz) C is (C rs ) - CAPACITANCE (pF) C is (V DS = 0) C is (V DS = 20) C rs (V DS = 0) 0 -4 -8 -12 -16 V GS - GATE-SOURCE VOLTAGE (V) P D - POWER DISSIPATION (mW) e n - NOISE VOLTAGE (nV / Hz) 10 100 50 V DG = 15V BW = 6.0 Hz @ f = 10 Hz, 100 Hz = 0.21 @ f 1.0 kHz 10 5 I D = 1.0 mA I D = 10 mA 1 10 f - FREQUENCY (kHz) 100 Power Dissipation vs Ambient Temperature f = 10 Hz f = 100 Hz f = 1.0 kHz 10 f = 10 kHz f = 100 kHz 350 300 10 TO-92 250 200 150 SOT-23 100 50 0 D 0.1 I D - DRAIN CURRENT (mA) 1 0.01 -20 V DG = 15V I 10V 15V 20V V GS(off) = - 0.85V Noise Voltage vs Current 0.1 1 - DRAIN CURRENT (mA) 20V V GS(off) = - 2.0V 0.1 0.01 100 1 0.01 V GS(off) = - 5.0V 5.0V 10V 15V Noise Voltage vs Frequency f = 0.1 - 1.0 MHz 1 5.0V 10V 15V 20V 1 Capacitance vs Voltage 100 10 V DG = 5.0V f = 1.0 kHz os 100 Output Conductance vs Drain Current - OUTPUT CONDUCTANCE ( mhos) Transconductance vs Drain Current g g fs - TRANSCONDUCTANCE (mmhos) Typical Characteristics 0 25 50 75 100 o TEMPERATURE ( C) 125 150 J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 N-Channel Switch (continued) Typical Characteristics (continued) 20 15 t r APPROX. I DINDEPENDENT VGS(off)= 3.0V T A = 25C I D = 6.6 mA 10 2.5 mA - 6.0V t d (ON) V GS = -12V 5 0 0 V GS(off) -2 -4 -6 -8 -10 - GATE-SOURCE CUTOFF VOLTAGE (V) TURN-OFF TIME (ns) V DD = 3.0V t r (ON) 100 T A = 25C VGS(off)= -2.2V 80 V DD = 3.0V V GS = -12V - 4.0V t (off) 60 - 7.5V t d(off) DEVICE V GS(off) INDEPENDENT 40 OFF- 25 Switching Turn-Off Time vs Drain Current t d(OFF) ,t t r(ON) ,t d(ON)- TURN-ON TIME (ns) Switching Turn-On Time vs Gate-Source Voltage 20 0 t d(off) 0 2 4 6 8 I D - DRAIN CURRENT (mA) 10 J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 N-Channel Switch