J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113
NDiscrete POWER & Signal
Technologies
J111
J112
J113
MMBFJ111
MMBFJ112
MMBFJ113
N-Channel Switch
This device is designed for low level analog switching, sample
and hold circuits and chopper stabalized amplifiers. Sourced from
Process 51.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES :
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Value Units
VDG Drain-Gate Voltage 35 V
VGS Gate-Source Voltage - 35 V
IGFForward Gate Current 50 mA
TJ ,Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
Symbol Characteristic Max Units
J111- J113 *MMBFJ111
PDTotal Device Dissipation
Derate above 25°C350
2.8 225
1.8 mW
mW/°C
RθJC Thermal Resistance, Junction to Case 125 °C/W
RθJA Thermal Resistance, Junction to Ambient 357 556 °C/W
SOT-23
Mark: 6P / 6R / 6S
G
S
D
GSDTO-92
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113
Electrical Characteristics TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol Parameter Test Conditions Min Max Units
ON CHARACTERISTICS
IDSS Zero-Gate Voltage Drain Current* VDS = 15 V, IGS = 0 J111
J112
J113
20
5.0
2.0
mA
mA
mA
rDS(on)Drain-Source On Resistance VDS ≤ 0.1 V, VGS = 0 J111
J112
J113
30
50
100
Ω
Ω
Ω
SMALL-SIGNAL CHARACTERISTICS
Cdg(on)
Csg(on)
Drain Gate & Source Gate On
Capacitance VDS = 0, VGS = 0, f = 1.0 MHz 28 pF
Cdg(off) Drain-Gate Off Capacitance VDS = 0, VGS = - 10 V, f = 1.0 MHz 5.0 pF
Csg(off) Source-Gate Off Capacitance VDS = 0, VGS = - 10 V, f = 1.0 MHz 5.0 pF
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 3.0%
Typical Characteristics
V(BR)GSS Gate-Source Breakdown Voltage IG = - 1.0 µA, VDS = 0 - 35 V
IGSS Gate Reverse Current VGS = - 15 V, VDS = 0 - 1.0 nA
VGS(off) Gate-Source Cutoff Voltage VDS = 5.0 V, ID = 1.0 µAJ111
J112
J113
- 3.0
- 1.0
- 0.5
- 10
- 5.0
- 3.0
V
V
V
ID(off) Gate-Source Cutoff Voltage VDS = 5.0 V, VGS = - 10 V 1.0 nA
r - DRAIN "ON" RESISTANCE
(Ω
Ω)
Parameter Interactions
0.5 1 2 5 10
5
10
20
50
100
5
10
20
50
100
V - GATE CUTOFF VOLTAGE (V)
g - TRANSCONDUCTANCE (mmhos)
GS (OFF)
fs
I , g @ V = 15V,
V = 0 PULSED
r @ 1.0 mA, V = 0
V @ V = 15V,
I = 1.0 nA
GS(off)
DSS
r
D
IDSS
DS
DS
GS
DS
DS
GS
fs
DS
DS
gfs
_
__ _ _
Common Drain-Source
00.4 0.8 1.2 1.6 2
0
2
4
6
8
10
V - DRAIN-SOURCE VOLTAGE (V)
I - DRAIN CURRENT (mA)
DS
D
- 0.4 V
- 1.0 V
- 0.8 V
- 0.2 V
- 0.6 V
V = 0 V
GS T = 25°C
TYP V = - 2.0 V
GS(off)
A
- 1.2 V
- 1.4 V
N-Channel Switch
(continued)
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113
Typical Characteristics (continued)
Transfer Characteristics
-3-2-10
0
10
20
30
40
V - GATE-SOURCE VOLTAGE (V)
I - DRAIN CURRENT (mA)
GS
D
V = - 3.0 V
GS(off)
25°C
V = 15 V
DS
V = - 2.0 V
GS(off)
125°C
- 55°C
25°C
- 55°C
125°C
Transfer Characteristics
-1.5-1-0.50
0
4
8
12
16
V - GATE-SOURCE VOLTAGE (V)
I - DRAIN CURRENT (mA)
GS
D
V = - 1.6 V
GS(off)
25°C
V = 15 V
DS
V = - 1.1 V
GS(off)
125°C
- 55°C
25°C
- 55°C
125°C
Transfer Characteristics
-3-2-10
0
10
20
30
V - GATE-SOURCE VOLTAGE (V)
g - TRANSCONDUCTANCE (mmhos)
GS
fs
V = - 3.0 V
GS(off)
25°C
V = 15 V
DS
V = - 2.0 V
GS(off)
125°C
- 55°C
25°C
125°C
- 55°C
Transfer Characteristics
-1.5-1-0.50
0
10
20
30
V - GATE-SOURCE VOLTAGE (V)
g - TRANSCONDUCTANCE (mmhos)
GS
fs
V = - 1.6 V
GS(off)
25°C
V = 15 V
DS
V = - 1.1 V
GS(off)
125°C
- 55°C
25°C
125°C
- 55°C
On Resistance vs Drain Current
1 2 5 10 20 50 100
10
20
50
100
I - DRAIN CURRENT (mA)
r - DRAIN "ON" RESISTANCE
D
DS
V
TYP = - 7.0V
GS(off)
25°C
(Ω
Ω)
125°C
25°C
125°C
r @ V = 0
GS
- 55°C
DS
V
TYP = - 2.0V
GS(off)
- 55°C
Normalized Drain Resistance
vs Bias Voltage
00.2 0.4 0.6 0.8 1
1
2
5
10
20
50
100
V /V - NORMALIZED GATE-SOURCE VOLTAGE (V)
r - NORMALIZED RESISTANCE
GS
DS
r =
DS
V @ 5.0V, 10 µµA
GS(off)
r DS
________
V GS(off)
V
GS
1 -
GS(off)
N-Channel Switch
(continued)
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113
N-Channel Switch
(continued)
Typical Characteristics (continued)
Output Conductance
vs Drain Current
0.01 0.1 10
0.1
1
10
100
I - DRAIN CURRENT (mA)
g - OUTPUT CONDUCTANCE ( mhos)
D
os
V = - 5.0V
GS(off)
T = 25°C
f = 1.0 kHz
V = 5.0V
DG
µ
µ
A
10V
15V
20V
5.0V
V = - 2.0V
GS(off)
V = - 0.85V
GS(off)
10V
15V
20V 10V
15V
20V
5.0V
Transconductance
vs Drain Current
0.1 110
1
10
100
I - DRAIN CURRENT (mA)
g - TRANSCONDUCTANCE (mmhos)
D
fs
V = - 1.4V
GS(off)
T = 25°C
V = 15V
f = 1.0 kHz
A
DG
V = - 3.0V
GS(off)
Capacitance vs Voltage
-20-16-12-8-40
1
10
100
V - GATE-SOURCE VOLTAGE (V)
C (C ) - CAPACITANCE (pF)
rs
GS
is
C (V = 0)
is DS
C (V = 20)
is DS
C (V = 0)
rs DS
f = 0.1 - 1.0 MHz
Noise Voltage vs Frequency
0.01 1 10 100
1
5
10
50
100
f - FREQUENCY (kHz)
e - NOISE VOLTAGE (nV / Hz)
n
V = 15V
BW = 6.0 Hz @ f = 10 Hz, 100 Hz
= 0.21 @ f ≥≥ 1.0 kHz
DG
I = 10 mA
D
I = 1.0 mA
D
√
√
Noise Voltage vs Current
0.01 0.1 1 10
1
10
100
I - DRAIN CURRENT (mA)
e - NOISE VOLTAGE (nV / Hz)
n
V = 15V
DG
√
√
D
f = 10 Hz
f = 100 Hz
f = 1.0 kHz
f = 10 kHz
f = 100 kHz
Power Dissipation vs
Ambient Temperature
0 25 50 75 100 125 150
0
50
100
150
200
250
300
350
TEMPERATURE ( C)
P - POWER DISSIPATION (mW)
D
o
TO-92
SOT-23
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113
Typical Characteristics (continued)
Switching Turn-On Time
vs Gate-Source Voltage
-10-8-6-4-20
0
5
10
15
20
25
V - GATE-SOURCE CUTOFF VOLTAGE (V)
t ,t - TURN-ON TIME (ns)
r(ON)
GS(off)
d(ON)
V = 3.0V
t APPROX. I INDEPENDENT
DD
D
r
V = 3.0V
T = 25°C
GS(off)
A
I = 6.6 mA
V = -12V
D
GS
t r (ON)
t d (ON)
2.5 mA
- 6.0V
Switching Turn-Off Time
vs Drain Current
0246810
0
20
40
60
80
100
I - DRAIN CURRENT (mA)
t ,t - TURN-OFF TIME (ns)
D
d(OFF) OFF
T = 25°C
V = 3.0V
V = -12V
t DEVICE
V INDEPENDENT
GS(off)
A
DD
GS
d(off)
V = -2.2V
GS(off)
- 4.0V
- 7.5V
td(off)
t(off)
N-Channel Switch
(continued)
