2SA1225
2002-07-23
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1225
Power Amplifier Applications
Driver Stage Amplifier Applications
• High tran sition frequency: fT = 100 MHz (typ.)
• Complementary to 2SC2983
Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO −160 V
Collector-emitter voltage VCEO −160 V
Emitter-base voltage VEBO −5 V
Collector current IC −1.5 A
Base current IB −0.3 A
Ta = 25°C 1.0
Collector power
dissipation Tc = 25°C
PC
15
W
Junction temperature Tj 150 °C
Storage temperature range Tstg −55 to 150 °C
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-7B1A
Weight: 0.36 g (typ.)
JEDEC ―
JEITA ―
TOSHIBA 2-7J1A
Weight: 0.36 g (typ.)
2SA1225
2002-07-23
2
Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO V
CB = −160 V, IE = 0 ― ― −1.0 µA
Emitter cut-off current IEBO V
EB = −5 V, IC = 0 ― ― −1.0 µA
Collector-emitter breakdown voltage V (BR) CEO I
C = −10 mA, IB = 0 −160 ― ― V
Emitter-base breakdown voltage V (BR) EBO I
E = −1 mA, IC = 0 −5 ― ― V
DC current gain hFE
(Note) VCE = −5 V, IC = −100 mA 70 ― 240
Collector emitter saturation voltage VCE (sat) I
C = −500 mA, IB = −50 mA ― ― −1.5 V
Base-emitter voltage VBE V
CE = −5 V, IC = −500 mA ― ― −1.0 V
Transition frequency fT V
CE = −10 V, IC = −100 mA ― 100 ― MHz
Collector output capacitance Cob V
CB = −10 V, IE = 0, f = 1 MHz ― 30 ― pF
Note: hFE classification O: 70 to 140, Y: 120 to 240
Marking
Explanation of Lot No.
A1225 Product No.
Lot No.
hFE Classification
Month of manufacture: January to December are denoted by letters A to L respectively.
Year of manufacture: last decimal digit of the year of manufacture
2SA1225
2002-07-23
3
Collector current IC (A)
Transition frequency fT (MHz)
Collector-emitter voltage VCE (V)
IC – VCE
Collector current IC (A)
Collector current IC (A)
hFE – IC
DC current gain hFE
Collector current IC (A)
VCE (sat) – IC
Collector-emitter saturation voltage
VCE (sat) (V)
Collector current IC (mA)
fT – IC
Collector-emitter voltage VCE (V)
Safe Operating Area
Collector power dissipation PC (W)
Ambient temperature Ta (°C)
PC – Ta
Common emitter
VCE = −5 V
10
−0.003
30
50
100
300
500
−0.01 −0.03 −0.1 −0.3 −1
Tc = 100°C
−25
25
−0.003
Common emitter
IC/IE = 10
Tc = 100°C
−0.05
−0.01 −0.03 −0.1 −0.3 −1
−0.1
−0.3
−0.5
−1
−3
−25
25
Common emitter
VCE = −10 V
Tc = 25°C
10
−5 −10 −30 −100 −300 −1000
30
50
100
300
(1) Tc = Ta Infinite heat sink
(2) Ceramic substrate
50 × 50 × 0.8 mm
(3) No heat sink
0
0
24
20 40 60 80 100 120 140 160
4
8
12
16
20
(1)
(2)
(3)
Common emitter
Tc = 25°C
0
0
−1.0
−0.2
IB = −2 mA
−0.4
−0.6
−0.8
−2 −4 −6 −8 −10 −12
−6
−8 −10 −20
−4
−14
0
*: Single nonrepetitive
pulse Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
−0.005
−0.3
IC max (continuous)
IC max (pulse)*
DC operation
Tc = 25°C
VCEO max
−100 −300 −10 −30 −1 −3
−0.01
−0.03
−0.05
−0.1
−0.3
−0.5
−1
−3
−5
1 ms*
10 ms*
2SA1225
2002-07-23
4
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conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
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(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
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any intellectual property or other rights of TOSHIBA CORPORATION or others.
• The information contained herein is subject to change without notice.
000707EA
A
RESTRICTIONS O N PRODUCT USE
