VDRM ITGQM ITSM VT0 rT VDClink = 2500 V = 3000 A = 30 kA = 1.5 V = 0.33 m = 1400 V Gate turn-off Thyristor 5SGA 30J2501 Doc. No. 5SYA1213-02 Jan. 05 * Patented free-floating silicon technology * Low on-state and switching losses * Annular gate electrode * Industry standard housing * Cosmic radiation withstand rating Blocking VGR 2V VDRM Repetitive peak off-state voltage 2500 V VRRM Repetitive peak reverse voltage 17 V IDRM Repetitive peak off-state current 100 mA VD = VDRM VGR 2V IRRM Repetitive peak reverse current 50 mA VR = VRRM RGK = VDClink Permanent DC voltage for 100 1400 V FIT failure rate Ambient cosmic radiation at sea level in open air. Mechanical data (see Fig. 3) Fm A Mounting force min. 36 kN max. 44 kN Acceleration: 50 m/s2 Device unclamped Device clamped 200 m/s2 M Weight 1.3 kg DS Surface creepage distance 33 mm Da Air strike distance 15 mm ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SGA 30J2501 GTO Data On-state ITAVM Max. average on-state current 1300 A ITRMS Max. RMS on-state current 2040 A ITSM Max. peak non-repetitive surge current I2t Limiting load integral Half sine wave, TC = 85 C 30 kA tP = 10 ms Tj = 125C 51 kA tP = 1 ms After surge: 4.5x106 A2s tP = 10 ms VD = VR = 0V 1.3x106 A2s tP = 1 ms VT On-state voltage 2.5 V IT = 3000 A VT0 Threshold voltage 1.5 V IT = 400 - 4000 A rT Slope resistance 0.33 m IH Holding current 100 A VGT Gate trigger voltage 1.2 V VD = 24 V IGT Gate trigger current 4 A RA = 0.1 VGRM Repetitive peak reverse voltage 17 V IGRM Repetitive peak reverse current 50 mA VGR = VGRM 500 A/s f = 200Hz IT = 3000 A, 1000 A/s f = 1Hz IGM = 30 A, diGdt = 20 A/s 2.5 s VD = Tj = 125 C Tj = 25 C Tj = 25 C Gate Turn-on switching di/dtcrit Max. rate of rise of on-state current td Delay time tr Rise time ton(min) Min. on-time Eon Turn-on energy per pulse 5 s 100 s 2 Ws IT 0.5 VDRM Tj Tj = 125 C = 125 C = 3000 A di/dt = 300 A/s IGM = 30 A diG/dt = 20 A/s CS = 5 F RS = 5 Turn-off switching ITGQM Max controllable turn-off 3000 A VDM = VDRM diGQ/dt = CS = 5 F LS 25 s VD = 1/2 VDRM VDM 3 s Tj = current ts Storage time tf Fall time toff(min) Min. off-time 100 s ITGQ = ITGQM Eoff Turn-off energy per pulse 4.7 Ws CS = IGQM Peak turn-off gate current LS 1000 A 0.3 H = VDRM 125 C diGQ/dt = 5 F RS 40 A/s = 40 A/s 5 0.3 H ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1213-02 Jan. 05 page 2 of 6 5SGA 30J2501 Thermal Tj Storage and operating -40...125C junction temperature range RthJC RthCH Thermal resistance 22 K/kW Anode side cooled junction to case 27 K/kW Cathode side cooled 12 K/kW Double side cooled Thermal resistance case to 6 K/kW Single side cooled heat sink 3 K/kW Double side cooled Analytical function for transient thermal impedance: 4 Z thJC (t) = i=1 R i(1 - e - t / i ) i 1 2 3 4 RI (K/kW) 5.4 4.5 1.7 0.4 i (s) 1.2 0.17 0.01 0.001 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1213-02 Jan. 05 page 3 of 6 5SGA 30J2501 Fig. 1 On-state characteristics ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1213-02 Jan. 05 page 4 of 6 5SGA 30J2501 Fig. 2 General current and voltage waveforms with GTO-specific symbols Fig. 3 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1213-02 Jan. 05 page 5 of 6 5SGA 30J2501 Reverse avalanche capability In operation with an antiparallel freewheeling diode, the GTO reverse voltage VR may exceed the rate value VRRM due to stray inductance and diode turn-on voltage spike at high di/dt. The GTO is then driven into reverse avalanche. This condition is not dangerous for the GTO provided avalanche time and current are below 10 s and 1000 A respectively. However, gate voltage must remain negative during this time. Recommendation : VGR = 10... 15 V. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone +41 (0)58 586 1419 Fax +41 (0)58 586 1306 Email abbsem@ch.abb.com Internet www.abbsem.com Doc. No. 5SYA1213-02 Jan. 05