ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
VDRM =
2500
V
ITGQM =
3000
A
ITSM =
30
kA
VT0 =
1.5
V
rT =
0.33
mΩ
V
DClink
=
1400
V
Gate turn-off Thyristor
5SGA 30J2501
Doc. No. 5SYA1213-02 Jan. 05
• Patented free-floating silicon technology
• Low on-state and switching losses
• Annular gate electrode
• Industry standard housing
• Cosmic radiation withstand rating
Blocking
VDRM Repetitive peak off-state voltage 2500
V VGR ≥ 2V
VRRM Repetitive peak reverse voltage 17
V
IDRM Repetitive peak off-state current ≤
100
mA VD = VDRM VGR ≥ 2V
IRRM Repetitive peak reverse current ≤
50
mA VR = VRRM RGK = ∞
VDClink Permanent DC voltage for 100
FIT failure rate 1400
V Ambient cosmic radiation at sea level in
open air.
Mechanical data (see Fig. 3) min.
36
kN
Fm Mounting force max.
44
kN
A Acceleration:
Device unclamped
Device clamped
50
200
m/s2
m/s2
M Weight
1.3
kg
D
S
Surface creepage distance ≥
33
mm
D
a
Air strike distance ≥
15
mm
5SGA 30J2501
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1213-02 Jan. 05 page 2 of 6
GTO Data
On-state
ITAVM Max. average on-state current 1300
A Half sine wave, TC = 85 °C
ITRMS Max. RMS on-state current 2040
A
ITSM 30
kA tP
=
10
ms T
j
= 125°C
Max. peak non-repetitive
surge current 51
kA tP
=
1
ms After surge:
I2t Limiting load integral 4.5x106 A2s tP
=
10
ms V
D
= VR = 0V
1.3x106
A2s tP
=
1
ms
V
T
On-state voltage 2.5
V IT
=
3000
A
VT0 Threshold voltage 1.5
V IT
=
400 - 4000
A Tj = 125 °C
rT Slope resistance 0.33
mΩ
IH Holding current 100
A Tj
=
25 °C
Gate
VGT Gate trigger voltage 1.2
V VD =
24 V Tj = 25 °C
IGT Gate trigger current 4
A RA =
0.1 Ω
VGRM Repetitive peak reverse voltage 17
V
I
GRM Repetitive peak reverse current 50
mA VGR =
VGRM
Turn-on switching
di/dtcrit Max. rate of rise of on-state 500
A/µs f = 200Hz I
T
= 3000 A, T
j
= 125 °C
current 1000
A/µs f = 1Hz IGM = 30 A, diGdt = 20 A/µs
td Delay time 2.5
µs VD =
0.5
VDRM
Tj =
125
°C
tr Rise time 5
µs IT =
3000
A di/dt =
300
A/µs
ton(min) Min. on-time 100
µs IGM =
30
A diG/dt
=
20
A/µs
Eon Turn-on energy per pulse 2
Ws CS =
5
µF R
S
=
5
Ω
Turn-off switching 3000
A VDM
=
VDRM diGQ/dt
= 40
A/µs
ITGQM Max controllable turn-off
current
CS =
5 µF LS ≤ 0.3
µH
ts Storage time 25
µs VD =
½
VDRM
VDM = V
DRM
tf Fall time 3
µs Tj =
125
°C
diGQ/dt
= 40
A/µs
toff(min) Min. off-time 100
µs ITGQ
=
ITGQM
Eoff Turn-off energy per pulse 4.7
Ws CS =
5
µF
RS = 5
Ω
IGQM Peak turn-off gate current 1000
A LS ≤
0.3
µH
5SGA 30J2501
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1213-02 Jan. 05 page 3 of 6
Thermal
Tj Storage and operating -40...125°C
junction temperature range
RthJC Thermal resistance 22
K/kW Anode side cooled
junction to case 27
K/kW Cathode side cooled
12
K/kW Double side cooled
RthCH Thermal resistance case to 6
K/kW Single side cooled
heat sink 3
K/kW Double side cooled
i 1 2 3 4
RI (K/kW) 5.4 4.5 1.7 0.4
Analytical function for transient thermal
impedance:
)e-(1R = (t)Z 4
1
i
/t-
thJC i
∑
=
iτ τi (s) 1.2 0.17 0.01 0.001
5SGA 30J2501
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1213-02 Jan. 05 page 4 of 6
Fig. 1 On-state characteristics
5SGA 30J2501
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1213-02 Jan. 05 page 5 of 6
Fig. 2 General current and voltage waveforms with GTO-specific symbols
Fig. 3 Outline drawing. All dimensions are in
millimeters and represent nominal values
unless stated otherwise.
5SGA 30J2501
ABB Switzerland
Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd Doc. No. 5SYA1213-02 Jan. 05
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abbsem.com
Reverse avalanche capability
In operation with an antiparallel freewheeling diode, the GTO reverse voltage VR may exceed the rate
value VRRM due to stray inductance and diode turn-on voltage spike at high di/dt. The GTO is then
driven into reverse avalanche. This condition is not dangerous for the GTO provided avalanche time
and current are below 10 µs and 1000 A respectively. However, gate voltage must remain negative
during this time. Recommendation : VGR = 10… 15 V.
